The book concentrates on the microstructural, electric and optoelectronic properties of rare-earth implanted MOS structures and their use as light emitters in potential applications.

This book contains reviews of recent experimental and theoretical results related to nanomaterials. It focuses on novel functional materials and nanostructures in combination with silicon on insulator (SOI) devices, as well as on the physics of new devices and sensors, nanostructured materials and nano scaled device characterization. Special attention is paid to fabrication and properties of modern low-power, high-performance, miniaturized, portable sensors in a wide range of applications such as telecommunications, radiation control, biomedical instrumentation and chemical analysis. In this book, new approaches exploiting nanotechnologies (such as UTBB FD SOI, Fin FETs, nanowires, graphene or carbon nanotubes on dielectric) to pave a way between “More Moore” and “More than Moore” are considered, in order to create different kinds of sensors and devices which will consume less electrical power, be more portable and totally compatible with modern microelectronics products.

This book provides a comprehensive survey of the technology of flash lamp annealing (FLA) for thermal processing of semiconductors. It gives a detailed introduction to the FLA technology and its physical background. Advantages, drawbacks and process issues are addressed in detail and allow the reader to properly plan and perform their own thermal processing. Moreover, this books gives a broad overview of the applications of flash lamp annealing, including a comprehensive literature survey. Several case studies of simulated temperature profiles in real material systems give the reader the necessary insight into the underlying physics and simulations. This book is a valuable reference work for both novice and advanced users.

The development of integrated silicon photonic circuits has recently been driven by the Internet and the push for high bandwidth as well as the need to reduce power dissipation induced by high data-rate signal transmission. To reach these goals, efficient passive and active silicon photonic devices, including waveguide, modulators, photodetectors,

Volume is indexed by Thomson Reuters BCI (WoS).This special-topic volume, Advances in Light-Emitting Materials', makes an important contribution to the field of silicon and III-nitride semiconductors. It begins with a brief history of visible-light emitting diodes. However, silicon is currently expanding from micro-electronics and into photonics. Due to its unsuitable band-gap, it has not previously been the material-of-choice for opto-electronic integration. That is now beginning to change and silicon devices have been developed which have the capability to emit, modulate, guide and detect light and which can be combined with microelectronics to form electronic and photonic integrated circuits. In particular, the performance of silicon-based light-emitters has made rapid progress during the last few years: the first paper describes the potential value of the D-band luminescence caused by dislocations in silicon and its use in infra-red light-emitters. Silicon-wafer direct-bonding, which permits the controlled formation of dislocation networks, is described in detail in the next paper. Silicon and silicon-germanium light-emitting diodes (LED), which emit band-to-band radiation, are then described. This paper is followed by observations on the effect of carrier-confinement on the emission of the band-to-band radiation of LEDs fabricated in silicon-on-insulator form. Finally, MOS light-emitting devices, based upon rare-earth ion-implantation, are described. These structures exhibit efficient electroluminescence within the wavelengths ranging from UV to visible light.Altogether, this volume presents an in-depth review of this important topic. Designed for engineers and researchers in the field of silicon and III-nitride semiconductors, this collection of research papers covers the rapid advances made over the last few years in the development and performance of silicon-based light- emitters. Editors Monemar (materials science, Linköping U., Sweden), Kittler (defect engineering, Joint Lab BTU-IHP, Germany) and Grimmeiss (solid state physics, U. of Lund, Sweden) have assembled this research to show how silicon research has expanded from microelectronics to photonics in recent years. These papers describe such developments as the potential value of D-band luminescence through silicon dislocations, silicon-germanium LEDs and MOS light-emitting devices based upon rare-earth ion implantation.

Optoelectronic devices and fibre optics are the basis of cutting-edge communication systems. This monograph deals with the various components of these systems, including lasers, amplifiers, modulators, converters, filters, sensors, and more.