The book is intended for researchers and professionals interested in understanding how to design and make a preliminary characterization of Radiation Hardened (rad-hard) analog and mixed-signal circuits, exploiting standard CMOS manufacturing processes available from different silicon foundries and using different technology nodes. It starts with an introductory overview of the effects of radiation in space and harsh environments with a specific focus on analog circuits to enable the reader to understand why specific design solutions are adopted to mitigate hard/soft errors. The following four Chapters are devoted to RHBD (Radiation Hardening by Design) techniques for semiconductor components applied to Operational Amplifiers, Voltage References, Analog-to-Digital (ADC) and Digital-to-Analog (DAC) converters. Each Chapter is organized with a first part which recalls the basic working principles of such circuit and a second part which describes the main RHBD techniques proposed in the literature to make them resilient to radiation. The approach follows a top-down scheme starting from RHBD at circuit level (how to mitigate radiation effects by handling transistors in the proper way) and finishing at layout level (how to shape a layout to mitigate radiation effects). The last-but-one Chapter is devoted to a special class of analog circuit, the dosimeters, which are gaining importance in space, health and nuclear applications. By leveraging the characteristic of a Flash-memory cell, a re-usable dosimeter is described which includes the sensitive element itself, the analog interface and the process of characterization. The last part is an overview of the strategies adopted for the testing of analog and mixed-signal circuits. In particular, it will focus also on the measurement campaigns performed by the Authors aiming for the characterization of developed rad-hard components under total dose (TID) and single-events (SEE). Technical topics discussed in the book include: - Radiation effects on semiconductor components (TID, SEE) - Radiation Hardening by Design (RHBD) Techniques - Rad-hard Operational Amplifiers - Rad-hard Voltage References - Rad-hard ADC - Rad-hard DAC - Rad-hard Special Circuits - Testing Strategies

Research on radiation-tolerant electronics has increased rapidly over the past few years, resulting in many interesting approaches to modeling radiation effects and designing radiation-hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation-hardened electronics for space applications, high-energy physics experiments such as those on the Large Hadron Collider at CERN, and many terrestrial nuclear applications including nuclear energy and nuclear safety. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their susceptibility to ionizing radiation has raised many exciting challenges, which are expected to drive research in the coming decade. In this book we highlight recent breakthroughs in the study of radiation effects in advanced semiconductor devices, as well as in high-performance analog, mixed signal, RF, and digital integrated circuits. We also focus on advances in embedded radiation hardening in both FPGA and microcontroller systems and apply radiation-hardened embedded systems for cryptography and image processing, targeting space applications.

This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metalOCooxideOCosemiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level. Contents: Single Event Effects in Avionics and on the Ground (E Normand); Soft Errors in Commercial Integrated Circuits (R C Baumann); System Level Single Event Upset Mitigation Strategies (W F Heidergott); Space Radiation Effects in Optocouplers (R A Reed et al.); The Effects of Space Radiation Exposure on Power MOSFETs: A Review (K Shenai et al.); Total Dose Effects in Linear Bipolar Integrated Circuits (H J Barnaby); Hardness Assurance for Commercial Microelectronics (R L Pease); Switching Oxide Traps (T R Oldham); Online and Realtime Dosimetry Using Optically Stimulated Luminescence (L Dusseau & J Gasiot); and other articles. Readership: Practitioners, researchers, managers and graduate students in electrical and electronic engineering, semiconductor science and technology, and microelectronics."

Research on radiation-tolerant electronics has increased rapidly over the past few years, resulting in many interesting approaches to modeling radiation effects and designing radiation-hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation-hardened electronics for space applications, high-energy physics experiments such as those on the Large Hadron Collider at CERN, and many terrestrial nuclear applications including nuclear energy and nuclear safety. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their susceptibility to ionizing radiation has raised many exciting challenges, which are expected to drive research in the coming decade. In this book we highlight recent breakthroughs in the study of radiation effects in advanced semiconductor devices, as well as in high-performance analog, mixed signal, RF, and digital integrated circuits. We also focus on advances in embedded radiation hardening in both FPGA and microcontroller systems and apply radiation-hardened embedded systems for cryptography and image processing, targeting space applications.

Reliability of Operating Electronic equipments on board of artificial satellites, spacecrafts, and military aircraft's in extreme environment require radiation hardening. The effects of radiation, both single event and total ionization dose on the phase frequency detector, voltage controlled oscillator, charge pump and filters for PLL application are studied. The focus is on and CMOS based technologies; however, other high performance technologies will be discussed wherever appropriate. The points of concern are single event effects (SEE) and steady state total ionizing dose (TID) IC response. Specific design architecture and techniques are implemented including radiation effects, radiation hardening technique, PLL building blocks and the overall performance to help mitigate radiation effects that degrade PLL performance. This book aims towards the design and analysis of a radiation hardening of all individual components of Rad-hard PLL starting from process simulation and device simulation to Circuit simulation using 0.5um CMOS library.

This book covers the most recent, advanced methods for designing mixed-signal integrated circuits, for radiation-hardened sensor readouts (capacitive) and frequency synthesizers (quadrature, digitally controlled oscillators and all-digital PLL etc.). The authors discuss the ionizing radiation sources, complex failure mechanisms as well as several mitigation strategies for avoiding such failures. Readers will benefit from an introduction to the essential theory and fundamentals of ionizing radiation and time-based signal processing, with the details of the implementation of several radiation-hardened IC prototypes. The radiation-hardening methods and solutions described are supported by theory and experimental data with, underlying tradeoffs. Discusses the basics of time-based signal processing and its effectiveness in mitigating ionizing radiation Provides mitigation strategies and recommendations for reducing radiation induced effects in Integrated Circuits Includes coverage of devices used in measuring radiation, focusing on semiconductor-based radiation sensors

This volume provides an extensive overview of radiation effects on integrated circuits, offering major guidelines for coping with radiation effects on components. It contains a set of chapters based on the tutorials presented at the International School on Effects of Radiation on Embedded Systems for Space Applications (SERESSA) that was held in Manaus, Brazil, November 20-25, 2005.

Research on radiation tolerant electronics has increased rapidly over the last few years, resulting in many interesting approaches to model radiation effects and design radiation hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation hardened electronics for space applications, high-energy physics experiments such as those on the large hadron collider at CERN, and many terrestrial nuclear applications, including nuclear energy and safety management. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their ionizing radiation susceptibility has raised many exciting challenges, which are expected to drive research in the coming decade. After the success of the first Special Issue on Radiation Tolerant Electronics, the current Special Issue features thirteen articles highlighting recent breakthroughs in radiation tolerant integrated circuit design, fault tolerance in FPGAs, radiation effects in semiconductor materials and advanced IC technologies and modelling of radiation effects.