This volume provides an extensive overview of radiation effects on integrated circuits, offering major guidelines for coping with radiation effects on components. It contains a set of chapters based on the tutorials presented at the International School on Effects of Radiation on Embedded Systems for Space Applications (SERESSA) that was held in Manaus, Brazil, November 20-25, 2005.

Space applications, nuclear physics, military operations, medical imaging, and especially electronics (modern silicon processing) are obvious fields in which radiation damage can have serious consequences, i.e., degradation of MOS devices and circuits. Zeroing in on vital aspects of this broad and complex topic, Radiation Effects in Semiconductors addresses the ever-growing need for a clear understanding of radiation effects on semiconductor devices and circuits to combat potential damage it can cause. Features a chapter authored by renowned radiation authority Lawrence T. Clark on Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation This book analyzes the radiation problem, focusing on the most important aspects required for comprehending the degrading effects observed in semiconductor devices, circuits, and systems when they are irradiated. It explores how radiation interacts with solid materials, providing a detailed analysis of three ways this occurs: Photoelectric effect, Compton effect, and creation of electron-positron pairs. The author explains that the probability of these three effects occurring depends on the energy of the incident photon and the atomic number of the target. The book also discusses the effects that photons can have on matter—in terms of ionization effects and nuclear displacement Written for post-graduate researchers, semiconductor engineers, and nuclear and space engineers with some electronics background, this carefully constructed reference explains how ionizing radiation is creating damage in semiconducting devices and circuits and systems—and how that damage can be avoided in areas such as military/space missions, nuclear applications, plasma damage, and X-ray-based techniques. It features top-notch international experts in industry and academia who address emerging detector technologies, circuit design techniques, new materials, and innovative system approaches.

This book provides a comprehensive presentation of the most advanced research results and technological developments enabling understanding, qualifying and mitigating the soft errors effect in advanced electronics, including the fundamental physical mechanisms of radiation induced soft errors, the various steps that lead to a system failure, the modelling and simulation of soft error at various levels (including physical, electrical, netlist, event driven, RTL, and system level modelling and simulation), hardware fault injection, accelerated radiation testing and natural environment testing, soft error oriented test structures, process-level, device-level, cell-level, circuit-level, architectural-level, software level and system level soft error mitigation techniques. The book contains a comprehensive presentation of most recent advances on understanding, qualifying and mitigating the soft error effect in advanced electronic systems, presented by academia and industry experts in reliability, fault tolerance, EDA, processor, SoC and system design, and in particular, experts from industries that have faced the soft error impact in terms of product reliability and related business issues and were in the forefront of the countermeasures taken by these companies at multiple levels in order to mitigate the soft error effects at a cost acceptable for commercial products. In a fast moving field, where the impact on ground level electronics is very recent and its severity is steadily increasing at each new process node, impacting one after another various industry sectors (as an example, the Automotive Electronics Council comes to publish qualification requirements on soft errors), research and technology developments and industrial practices have evolve very fast, outdating the most recent books edited at 2004.

This book constitutes the proceedings of the 35th International Conference on Architecture of Computing Systems, ARCS 2022, held virtually in July 2022. The 18 full papers in this volume were carefully reviewed and selected from 35 submissions. ARCS provides a platform covering newly emerging and cross-cutting topics, such as autonomous and ubiquitous systems, reconfigurable computing and acceleration, neural networks and artificial intelligence. The selected papers cover a variety of topics from the ARCS core domains, including energy efficiency, applied machine learning, hardware and software system security, reliable and fault-tolerant systems and organic computing.

Research on radiation-tolerant electronics has increased rapidly over the past few years, resulting in many interesting approaches to modeling radiation effects and designing radiation-hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation-hardened electronics for space applications, high-energy physics experiments such as those on the Large Hadron Collider at CERN, and many terrestrial nuclear applications including nuclear energy and nuclear safety. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their susceptibility to ionizing radiation has raised many exciting challenges, which are expected to drive research in the coming decade. In this book we highlight recent breakthroughs in the study of radiation effects in advanced semiconductor devices, as well as in high-performance analog, mixed signal, RF, and digital integrated circuits. We also focus on advances in embedded radiation hardening in both FPGA and microcontroller systems and apply radiation-hardened embedded systems for cryptography and image processing, targeting space applications.

Issues in Nuclear and Plasma Science and Technology: 2013 Edition is a ScholarlyEditions™ book that delivers timely, authoritative, and comprehensive information about Plasma Science. The editors have built Issues in Nuclear and Plasma Science and Technology: 2013 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Plasma Science in this book to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Issues in Nuclear and Plasma Science and Technology: 2013 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.

This book describes in detail the semiconductor physics and the effects of the high temperatures and ionizing radiations in the electrical behavior of the Metal-OxideSemiconductor Field Effect Transistors (MOSFETs), implemented with the first and second generations of the differentiated layout styles. The authors demonstrate a variety of innovative layout styles for MOSFETs, enabling readers to design analog and RF MOSFETs that operate in a high-temperature wide range and an ionizing radiation environment with high electrical performance and reduced die area.

This Open Access book introduces readers to many new techniques for enhancing and optimizing reliability in embedded systems, which have emerged particularly within the last five years. This book introduces the most prominent reliability concerns from today’s points of view and roughly recapitulates the progress in the community so far. Unlike other books that focus on a single abstraction level such circuit level or system level alone, the focus of this book is to deal with the different reliability challenges across different levels starting from the physical level all the way to the system level (cross-layer approaches). The book aims at demonstrating how new hardware/software co-design solution can be proposed to ef-fectively mitigate reliability degradation such as transistor aging, processor variation, temperature effects, soft errors, etc. Provides readers with latest insights into novel, cross-layer methods and models with respect to dependability of embedded systems; Describes cross-layer approaches that can leverage reliability through techniques that are pro-actively designed with respect to techniques at other layers; Explains run-time adaptation and concepts/means of self-organization, in order to achieve error resiliency in complex, future many core systems.

This book uses motivating examples and real-life attack scenarios to introduce readers to the general concept of fault attacks in cryptography. It offers insights into how the fault tolerance theories developed in the book can actually be implemented, with a particular focus on a wide spectrum of fault models and practical fault injection techniques, ranging from simple, low-cost techniques to high-end equipment-based methods. It then individually examines fault attack vulnerabilities in symmetric, asymmetric and authenticated encryption systems. This is followed by extensive coverage of countermeasure techniques and fault tolerant architectures that attempt to thwart such vulnerabilities. Lastly, it presents a case study of a comprehensive FPGA-based fault tolerant architecture for AES-128, which brings together of a number of the fault tolerance techniques presented. It concludes with a discussion on how fault tolerance can be combined with side channel security to achieve protection against implementation-based attacks. The text is supported by illustrative diagrams, algorithms, tables and diagrams presenting real-world experimental results.