This book provides guidelines and design rules for developing high-performance, low-cost, and energy-efficient quantum-dot (QD) lasers for silicon photonic integrated circuits (PIC), optical frequency comb generation, and quantum information systems. To this end, the nonlinear properties and dynamics of QD lasers on silicon are investigated in depth by both theoretical analysis and experiment. This book aims at addressing four issues encountered in developing silicon PIC: 1) The instability of laser emission caused by the chip-scale back-reflection. During photonic integration, the chip-scale back-reflection is usually responsible for the generation of severe instability (i.e., coherence collapse) from the on-chip source. As a consequence, the transmission performance of the chip could be largely degraded. To overcome this issue, we investigate the nonlinear properties and dynamics of QD laser on Si in this book to understand how can it be applied to isolator-free photonic integration in which the expensive optical isolator can be avoided. Results show that the QD laser exhibits a high degree of tolerance for chip-scale back-reflections in absence of any instability, which is a promising solution for isolator-free applications. 2) The degradation of laser performance at a high operating temperature. In this era of Internet-of-Thing (IoT), about 40% of energy is consumed for cooling in the data center. In this context, it is important to develop a high-temperature continuous-wave (CW) emitted laser source. In this book, we introduce a single-mode distributed feedback (DFB) QD laser with a design of optical wavelength detuning (OWD). By taking advantage of the OWD technique and the high-performance QD with high thermal stability, all the static and dynamical performances of the QD device are improved when the operating temperature is high. This study paves the way for developing uncooled and isolator-free PIC. 3) The limited phase noise level and optical bandwidth of the laser are the bottlenecks for further increasing the transmission capacity. To improve the transmission capacity and meet the requirement of the next generation of high-speed optical communication, we introduce the QD-based optical frequency comb (OFC) laser in this book. Benefiting from the gain broadening effect and the low-noise properties of QD, the OFC laser is realized with high optical bandwidth and low phase noise. We also provide approaches to further improve the laser performance, including the external optical feedback and the optical injection. 4) Platform with rich optical nonlinearities is highly desired by future integrated quantum technologies. In this book, we investigate the nonlinear properties and four-wave mixing (FWM) of QD laser on Si. This study reveals that the FWM efficiency of QD laser is more than ten times higher than that of quantum-well laser, which gives insight into developing a QD-based silicon platform for quantum states of light generation. Based on the results in this book, scientists, researchers, and engineers can come up with an informed judgment in utilizing the QD laser for applications ranging from classical silicon PIC to integrated quantum technologies.

The book addresses issues associated with physics and technology of injection lasers based on self-organized quantum dots. Fundamental and technological aspects of quantum dot edge-emitting lasers and VCSELs, their current status and future prospects are summarized and reviewed. Basic principles of QD formation using self-organization phenomena are reviewed. Structural and optical properties of self-organized QDs are considered with a number of examples in different material systems. Recent achievements in controlling the QD properties including the effects of vertical stacking, changing the matrix bandgap and the surface density of QDs are reviewed. The authors focus on the use of self-organized quantum dots in laser structures, fabrication and characterization of edge and surface emitting diode lasers, their properties and optimization with special attention paid to the relationship between structural and electronic properties of QDs and laser characteristics. The threshold and power characteristics of the state-of-the-art QD lasers are demonstrated. Issues related to the long-wavelength (1.3-mm) lasers on a GaAs substrate are also addressed and recent results on InGaAsN-based diode lasers presented for the purpose of comparison.

Future Directions in Silicon Photonics, Volume 101 in the Semiconductors and Semimetals series, highlights new advances in the field, with this updated volume presenting the latest developments as discussed by esteemed leaders in the field silicon photonics. Provides the authority and expertise of leading contributors from an international board of authors Represents the latest release in the Semiconductors and Semimetals series Includes the latest information on Silicon Photonics

Silicon, the leading material in microelectronics during the last four decades, also promises to be the key material in the future. Despite many claims that silicon technology has reached fundamental limits, the performance of silicon microelectronics continues to improve steadily. The same holds for almost all the applications for which Si was considered to be unsuitable. The main exception to this positive trend is the silicon laser, which has not been demonstrated to date. The main reason for this comes from a fundamental limitation related to the indirect nature of the Si band-gap. In the recent past, many different approaches have been taken to achieve this goal: dislocated silicon, extremely pure silicon, silicon nanocrystals, porous silicon, Er doped Si-Ge, SiGe alloys and multiquantum wells, SiGe quantum dots, SiGe quantum cascade structures, shallow impurity centers in silicon and Er doped silicon. All of these are abundantly illustrated in the present book.

A fascinating insight into the state-of-the-art in silicon microphotonics and on what we can expect in the near future. The book presents an overview of the current understanding of getting light from silicon. It concentrates mainly on low dimensional silicon structures, like quantum dots, wires and wells, but covers also alternative approaches like porous silicon and the doping of silicon with rare-earths. The emphasis is on the experimental and theoretical achievements concerning the optoelectronic properties of confined silicon structures obtained during recent years. Silicon based photonic crystals are in particular considered. An in depth discussion of the route towards a silicon laser is presented.

An accessible yet rigorous introduction to nanophotonics, covering basic principles, technology, and applications in lighting, lasers, and photovoltaics. Providing a wealth of information on materials and devices, and over 150 color figures, it is the 'go-to' guide for students in electrical engineering taking courses in nanophotonics.

Captures the most up-to-date research in the field, written in an accessible style by the world's leading experts.

This book reviews recent advances in the field of semiconductor quantum dots via contributions from prominent researchers in the scientific community. Special focus is given to optical, quantum optical, and spin properties of single quantum dots.

Reliability of Semiconductor Lasers and Optoelectronic Devices simplifies complex concepts of optoelectronics reliability with approachable introductory chapters and a focus on real-world applications. This book provides a brief look at the fundamentals of laser diodes, introduces reliability qualification, and then presents real-world case studies discussing the principles of reliability and what occurs when these rules are broken. Then this book comprehensively looks at optoelectronics devices and the defects that cause premature failure in them and how to control those defects. Key materials and devices are reviewed including silicon photonics, vertical-cavity surface-emitting lasers (VCSELs), InGaN LEDs and lasers, and AlGaN LEDs, covering the majority of optoelectronic devices that we use in our everyday lives, powering the Internet, telecommunication, solid-state lighting, illuminators, and many other applications. This book features contributions from experts in industry and academia working in these areas and includes numerous practical examples and case studies.This book is suitable for new entrants to the field of optoelectronics working in R&D. - Includes case studies and numerous examples showing best practices and common mistakes affecting optoelectronics reliability written by experts working in the industry - Features the first wide-ranging and comprehensive overview of fiber optics reliability engineering, covering all elements of the practice from building a reliability laboratory, qualifying new products, to improving reliability on mature products - Provides a look at the reliability issues and failure mechanisms for silicon photonics, VCSELs, InGaN LEDs and lasers, AIGaN LEDs, and more

Diode Lasers and Photonic Integrated Circuits, Second Edition provides a comprehensive treatment of optical communication technology, its principles and theory, treating students as well as experienced engineers to an in-depth exploration of this field. Diode lasers are still of significant importance in the areas of optical communication, storage, and sensing. Using the the same well received theoretical foundations of the first edition, the Second Edition now introduces timely updates in the technology and in focus of the book. After 15 years of development in the field, this book will offer brand new and updated material on GaN-based and quantum-dot lasers, photonic IC technology, detectors, modulators and SOAs, DVDs and storage, eye diagrams and BER concepts, and DFB lasers. Appendices will also be expanded to include quantum-dot issues and more on the relation between spontaneous emission and gain.