Photo-assisted metalorganic molecular beam epitaxy (MOMBE), with an argon ion laser, has been used to grow GaAs. The substrate temperature was calibrated by an infrared laser interferometric technique with an accuracy of + or - 3 deg C. The MOMBE growth of GaAs, InAs, and InGaAs was first studied, by monitoring intensity oscillations of reflection high-energy electron diffraction (RHEED). The actual arsenic incorporation rate was deduced from As-induced RHEED oscillations, and a unity V/III incorporation ratio could be obtained. In growing InGaAs, indium segregation suppresses the InGaAs growth rate. In laser- assisted MOMBE the enhancement of arsenic desorption with laser irradiation and its effects were observed. The decomposition of triethylgallium and desorption of arsenic compete with each other, resulting in a saturation in the enhanced growth rate in the arsenic-controlled growth regime. The initial growth behavior was also studied by inspecting the details of the RHEED behavior and arsenic surface coverage ... Molecular beam epitaxy, Photo-assisted, Metal-organics gallium arsenide, Indium arsenide, Argon ion laser.

We have investigated laser-enhanced growth of GaAs by metal-organic molecular beam epitaxy (MOMBE) with triethylgallium (TEGa) and solid arsenic and by chemical beam epitaxy (CBE) with TEGa and a safer, alternative organometallic precursor, tris dimethylaminoarsenic (TDMAAs), to the highly toxic arsine. We discovered that with TDMAAs we can increase the laser-enhanced growth temperature window by 100 deg C, as compared to that with arsine or arsenic. CBE growth of InP and InGaP using tris- dimethylaminophosphorus (TDMAP) and tertiarybutylphosphine (TBP) is also reported. We discovered the etching effect of TDMAAs and TDMAP, and investigated laser-enhanced etching of GaAs by TDMAAs. We also investigated laser-enhanced carbon and silicon doping in GaAs with diiodomethane (CI2H2) and disilane, respectively. We can achieve a two-order-of-magnitude enhancement in p-type carbon doping with CI2H2 by laser irradiation. Finally, we report on lateral bandgap variation by laser-modified compositional change in InGaAs/GaAs multiple quantum wells grown by MOMBE and CBE. jg p.3.

An introduction to the basic principles of the technique of liquid-phase epitaxy (LPE) as applied to the growth of the III-V family of compounds.

Low temperature processes for semiconductors have been recently under intensive development to fabricate controlled device structures with minute dimensions in order to achieve the highest device performance and new device functions as well as high integration density. Comprising reviews by experts long involved in the respective pioneering work, this volume makes a useful contribution toward maturing the process of low temperature epitaxy as a whole.

This book reviews the solid core of fundamental scientific knowledge on laser-stimulated surface chemistry that has accumulated over the past few years. It provides a useful overview for the student and interested non-expert as well as essential reference data (photodissociation cross sections, thermochemical constants, etc.) for the active researcher.

The papers in this volume cover all aspects of laser assisted surface processing ranging from the preparation of high-Tc superconducting layer structures to industrial laser applications for device fabrication. The topics presented give recent results in organometallic chemistry and laser photochemistry, and novel surface characterization techniques. The ability to control the surface morphology by digital deposition and etching shows one of the future directions for exciting applications of laser surface processing, some of which may apply UV and VUV excitation. The understanding of elementary proceses is essential for the design of novel deposition methods, with diamond CVD being an outstanding example. The high quality of these contributions once again demonstrates that the E-MRS is an efficient forum for interaction between research workers and industry.

In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.