The growth and characterization of epitaxial indium gallium arsenide phosphide compound semiconductor films are described. Methods have been developed to improve the purity of both InP and GaAs and to better assess the crystalline homogeneity of the InGaAsP alloy system. A thermodynamic analysis of impurity incorporation in the hydride vapor phase growth technique is presented for InP and GaAs. In this work techniques have been developed to produce state-of-the-art high purity InP epitaxial films. These films are then utilized in the chemical identification of acceptors in low temperature photoluminescence. The effects of adding oxygen and varying the input partial pressure of arsine on impurity incorporation in GaAs are examined in detail. A controlled amount of oxygen added to the reaction vessel is shown to reduce dramatically the amount of silicon (one of the primary impurity species) incorporated into GaAs. The input partial pressure of arsine is found to impact the incorporation of sulfur, germanium and silicon (germanium and silicon as acceptors as well as donors). Double crystal x-ray diffractometry is used to provide an improved method to assess the quality of alloys of InGaAsP. Diffraction profiles which approach the theoretical limit of this material system are presented. Furthermore, a nondestructive technique for determining curvature in nonplanar crystals is presented.

The main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V devices is presented. This is the first book of its kind to discuss the theory of the various crystal growth techniques in relation to their advantages and limitations for use in III-V semiconductor devices.

Ultrawide Bandgap Semiconductors, Volume 107 in the Semiconductors and Semimetals series, highlights the latest breakthrough in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices based on gallium oxide, aluminium nitride, boron nitride, and diamond. It includes important topics on the materials growth, characterization, and device applications of UWBG materials, where electronic, photonic, thermal and quantum properties are all thoroughly explored. - Contains the latest breakthrough in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices - Provides a comprehensive presentation that covers the fundamentals of materials growth and characterization, as well as design and performance characterization of state-of-the-art UWBG materials, structures, and devices - Presents an in-depth discussion on electronic, photonic, thermal, and quantum technologies based on UWBG materials

In this work, a body of knowledge is presented which pertains to the growth, characterization and exploitation of high quality, novel II-IV oxide epitaxial films and structures grown by plasma-assisted molecular beam epitaxy. The two compounds of primary interest within this research are the ternary films Ni[subscript x]Mg1[subscript x]O and Zn[subscript x]Mg1[subscript x]0 and the investigation focuses predominantly on the realization, assessment and implementation of these two oxides as optoelectronic materials. The functioning hypothesis for this largely experimental effort has been that these cubic ternary oxides can be exploited--and possibly even juxtaposed--to realize novel wide band gap optoelectronic technologies. The results of the research conducted presented herein overwhelmingly support this hypothesis in that they confirm the possibility to grow these films with sufficient quality by this technique, as conjectured. Ni[subscript x]Mg1−[subscript x]O films with varying Nickel concentrations ranging from x = 0 to x = 1 have been grown on lattice matched MgO substrates (lattice mismatch [epsilon][less than]0.01) and characterized structurally, morphologically, optically and electrically. Similarly, cubic Zn[subscript x]Mg1−[subscript x]0 films with Zinc concentrations ranging from x = 0 to x[almost equal to]0.53, as limited by phase segregation, have also been grown and characterized. Photoconductive devices have been designed and fabricated from these films and characterized. Successfully engineered films in both categories exhibit the desired deep ultraviolet photoresponse and therefore verify the hypothesis. While the culminating work of interest here focuses on the two compounds discussed above, the investigation has also involved the characterization or exploitation of related films including hexagonal phase Zn[subscript x]Mg1−[subscript x]O, ZnO, Cd[subscript x]Zn1−[subscript x]O and hybrid structures based on these compounds used in conjunction with GaN. These works were critical precursors to the growth of cubic oxides, however, and are closely relevant. Viewed in its entirety, this document can therefore be considered a multifaceted interrogation of several novel oxide compounds and structures, both cubic and wurtzite in structure. The conclusions of the research can be stated succinctly as a quantifiably successful effort to validate the use of these compounds and structures for wide bandgap optoelectronic technologies.