The growth and characterization of epitaxial indium gallium arsenide phosphide compound semiconductor films are described. Methods have been developed to improve the purity of both InP and GaAs and to better assess the crystalline homogeneity of the InGaAsP alloy system. A thermodynamic analysis of impurity incorporation in the hydride vapor phase growth technique is presented for InP and GaAs. In this work techniques have been developed to produce state-of-the-art high purity InP epitaxial films. These films are then utilized in the chemical identification of acceptors in low temperature photoluminescence. The effects of adding oxygen and varying the input partial pressure of arsine on impurity incorporation in GaAs are examined in detail. A controlled amount of oxygen added to the reaction vessel is shown to reduce dramatically the amount of silicon (one of the primary impurity species) incorporated into GaAs. The input partial pressure of arsine is found to impact the incorporation of sulfur, germanium and silicon (germanium and silicon as acceptors as well as donors). Double crystal x-ray diffractometry is used to provide an improved method to assess the quality of alloys of InGaAsP. Diffraction profiles which approach the theoretical limit of this material system are presented. Furthermore, a nondestructive technique for determining curvature in nonplanar crystals is presented.

This program undertakes experimental and theoretical investigation of the role of growth kinetics and mechanism(s) in molecular beam epitaxial growth of III-V semiconductors and its possible control via laser excitation to effect metastable structures and phases. The experimental work on laser induced MBE growth is collaboratively carried out. Specifically, progress is reported on (i) Monte-Carlo computer simulations of MBE growth and predictions of the dynamics of reflection-high-energy-electron-diffraction (RHEED) intensities (ii) a theory of laser--induced-desorption (iii) Experimental studies of the RHEED intensity dynamics for GaAs/InxGa1-xAs(100) MBE growth (iv) the first realization of GaAs/InAs strained layer structures (with 7.4% lattice mismatch) and transmission electron microscopy studies showing high quality interfaces, and (v) establishment of a facility for magneto-absorption studies.

Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community

An introduction to the basic principles of the technique of liquid-phase epitaxy (LPE) as applied to the growth of the III-V family of compounds.

Springer-Verlag, Berlin Heidelberg, in conjunction with Springer-Verlag New York, is pleased to announce a new series: CRYSTALS Growth, Properties, and Applications The series presents critical reviews of recent developments in the field of crystal growth, properties, and applications. A substantial portion of the new series will be devoted to the theory, mechanisms, and techniques of crystal growth. Occasionally, clear, concise, complete, and tested instructions for growing crystals will be published, particularly in the case of methods and procedures that promise to have general applicability. Responding to the ever-increasing need for crystal substances in research and industry, appropriate space will be devoted to methods of crystal characterization and analysis in the broadest sense, even though reproducible results may be expected only when structures, microstructures, and composition are really known. Relations among procedures, properties, and the morphology of crystals will also be treated with reference to specific aspects of their practical application. In this way the series will bridge the gaps between the needs of research and industry, the pos sibilities and limitations of crystal growth, and the properties of crystals. Reports on the broad spectrum of new applications - in electronics, laser tech nology, and nonlinear optics, to name only a few - will be of interest not only to industry and technology, but to wider areas of applied physics as well and to solid state physics in particular. In response to the growing interest in and importance of organic crystals and polymers, they will also be treated.

The antimonides are potentially highly useful materials for low-power electronic-device applications. However, unlike P and As the volatility of Sb is very low, comparable to that of Al and Ga. As a result surface stoichiometry during growth cannot be controlled simply by heating, which can result in defective material. The objective of this work is to determine whether real-time optical diagnostics, specifically spectroscopic ellipsometry (SE) and reflectance-difference spectroscopy (RDS) can resolve this problem. We found SE to be essential, not only for reproducibly growing high-quality GaSb but also for obtaining new information about growth mechanisms. The SE data revealed that decomposition of the Sb precursor, trimethylantimony, was self-limiting in contrast to the Ga precursor, trimethylgallium. We also showed that laser light scattering (LLS) could provide the information necessary to optimize V/III flow ratios. This work represents the first uses of SE for real-time studies of antimonide growth and of LLS for real-time optimization of growth processes. The SE data also showed the presence of crystalline GaSb during the earliest stages (first 10 s) of GaSb growth, revealing that the heteroepitaxial growth of GaSb on GaAs proceeds as a physical mixture of separate islands of GaAs and GaSb, in contrast to the expected mixing on the atomic-scale. All other post-deposition characterizations (AFM, SEM, XRD, TEM, and conductivity measurements) supported the information that the real-time optical data (SE, RDS, and LLS) revealed.

The book describes developments in the crystal growth of bulk II-VI semiconductor materials. A fundamental, systematic, and in-depth study of the physical vapor transport (PVT) growth process is the key to producing high-quality single crystals of semiconductors. As such, the book offers a comprehensive overview of the extensive studies on ZnSe and related II-VI wide bandgap compound semiconductors, such as CdS, CdTe, ZnTe, ZnSeTe and ZnSeS. Further, it shows the detailed steps for the growth of bulk crystals enabling optical devices which can operate in the visible spectrum for applications such as blue light emitting diodes, lasers for optical displays and in the mid-IR wavelength range, high density recording, and military communications. The book then discusses the advantages of crystallization from vapor compared to the conventional melt growth: lower processing temperatures, the purification process associated with PVT, and the improved surface morphology of the grown crystals, as well as the necessary drawbacks to the PVT process, such as the low and inconsistent growth rates and the low yield of single crystals. By presenting in-situ measurements of transport rate, partial pressures and interferometry, as well as visual observations, the book provides detailed insights into in the kinetics during the PVT process. This book is intended for graduate students and professionals in materials science as well as engineers preparing and developing optical devices with semiconductors.

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.