The thesis describes growth and characterization of nitride-based quantum well structures for laser diodes emitting in the wavelength range between 400 nm and 450 nm. In order optimize the epitaxial growth process by metal organic vapor phase epitaxy and thus the performance of the laser diode structures, the material properties of the indium gallium nitride (InGaN) active region were correlated with device characteristics. By analyzing optically pumpable laser structures in a first step, growth conditions and growth schemes were revealed that prevent 3D growth and the formation of additional defects in the active region. In the next step, using growth parameter that provide a high material gain broad area current injection laser diodes emitting around 400 nm were realized on sapphire substrate. These devices feature threshold current densities in the range of 6 kA/cm² in pulsed operation. For laser diodes emitting at longer wavelengths, the heterostructure layout was optimized by comparing optical pumping results with device simulation. Using a layer sequence with increased modal gain, first broad area current injection laser diodes emitting around 440 nm were demonstrated. The structures were grown on low defect density bulk GaN substrates and exhibit threshold current densities of ~10 kA/cm² in pulsed operation. On the basis of these results further device and process development was started aiming for ridge waveguide laser structures operating continuous wave in the wavelength range between 400 and 450 nm.

The book addresses issues associated with physics and technology of injection lasers based on self-organized quantum dots. Fundamental and technological aspects of quantum dot edge-emitting lasers and VCSELs, their current status and future prospects are summarized and reviewed. Basic principles of QD formation using self-organization phenomena are reviewed. Structural and optical properties of self-organized QDs are considered with a number of examples in different material systems. Recent achievements in controlling the QD properties including the effects of vertical stacking, changing the matrix bandgap and the surface density of QDs are reviewed. The authors focus on the use of self-organized quantum dots in laser structures, fabrication and characterization of edge and surface emitting diode lasers, their properties and optimization with special attention paid to the relationship between structural and electronic properties of QDs and laser characteristics. The threshold and power characteristics of the state-of-the-art QD lasers are demonstrated. Issues related to the long-wavelength (1.3-mm) lasers on a GaAs substrate are also addressed and recent results on InGaAsN-based diode lasers presented for the purpose of comparison.

Volume 48in the Semiconductors and Semimetals series discusses the physics and chemistry of electronic materials, a subject of growing practical importance in the semiconductor devices industry. The contributors discuss the current state of knowledge and provide insight into future developments of this important field.

Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides

This book presents the fabrication of optoelectronic nanodevices. The structures considered are nanowires, nanorods, hybrid semiconductor nanostructures, wide bandgap nanostructures for visible light emitters and graphene. The device applications of these structures are broadly explained. The book deals also with the characterization of semiconductor nanostructures. It appeals to researchers and graduate students.

Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

The Handbook of Advanced Lighting Technology is a major reference work on the subject of light source science and technology, with particular focus on solid-state light sources – LEDs and OLEDs – and the development of 'smart' or 'intelligent' lighting systems; and the integration of advanced light sources, sensors, and adaptive control architectures to provide tailored illumination which is 'fit to purpose.' The concept of smart lighting goes hand-in-hand with the development of solid-state light sources, which offer levels of control not previously available with conventional lighting systems. This has impact not only at the scale of the individual user, but also at an environmental and wider economic level. These advances have enabled and motivated significant research activity on the human factors of lighting, particularly related to the impact of lighting on healthcare and education, and the Handbook provides detailed reviews of work in these areas. The potential applications for smart lighting span the entire spectrum of technology, from domestic and commercial lighting, to breakthroughs in biotechnology, transportation, and light-based wireless communication. Whilst most current research globally is in the field of solid-state lighting, there is renewed interest in the development of conventional and non-conventional light sources for specific applications. This Handbook comprehensively reviews the basic physical principles and device technologies behind all light source types and includes discussion of the state-of-the-art. The book essentially breaks down into five major sections: Section 1: The physics, materials, and device technology of established, conventional, and emerging light sources, Section 2: The science and technology of solid-state (LED and OLED) light sources, Section 3: Driving, sensing and control, and the integration of these different technologies under the concept of smart lighting, Section 4: Human factors and applications, Section 5: Environmental and economic factors and implications