This fourth volume of the landmark handbook focuses on the design, testing, and thermal management of 3D-integrated circuits, both from a technological and materials science perspective. Edited and authored by key contributors from top research institutions and high-tech companies, the first part of the book provides an overview of the latest developments in 3D chip design, including challenges and opportunities. The second part focuses on the test methods used to assess the quality and reliability of the 3D-integrated circuits, while the third and final part deals with thermal management and advanced cooling technologies and their integration.

Physical Design for 3D Integrated Circuits reveals how to effectively and optimally design 3D integrated circuits (ICs). It also analyzes the design tools for 3D circuits while exploiting the benefits of 3D technology. The book begins by offering an overview of physical design challenges with respect to conventional 2D circuits, and then each chapter delivers an in-depth look at a specific physical design topic. This comprehensive reference: Contains extensive coverage of the physical design of 2.5D/3D ICs and monolithic 3D ICs Supplies state-of-the-art solutions for challenges unique to 3D circuit design Features contributions from renowned experts in their respective fields Physical Design for 3D Integrated Circuits provides a single, convenient source of cutting-edge information for those pursuing 2.5D/3D technology.

This book focuses on foundry-based process technology that enables the fabrication of 3-D ICs. The core of the book discusses the technology platform for pre-packaging wafer lever 3-D ICs. However, this book does not include a detailed discussion of 3-D ICs design and 3-D packaging. This is an edited book based on chapters contributed by various experts in the field of wafer-level 3-D ICs process technology. They are from academia, research labs and industry.

Currently, the term 3D integration includes a wide variety of different integration methods, such as 2.5-dimensional (2.5D) interposer-based integration, 3D integrated circuits (3D ICs), 3D systems-in-package (SiP), 3D heterogeneous integration, and monolithic 3D ICs. The goal of this book is to provide readers with an understanding of the latest challenges and issues in 3D integration. TSVs are not the only technology element needed for 3D integration. There are numerous other key enabling technologies required for 3D integration, and the speed of the development in this emerging field is very rapid. To provide readers with state-of-the-art information on 3D integration research and technology developments, each chapter has been contributed by some of the world’s leading scientists and experts from academia, research institutes, and industry from around the globe. Covers chip/wafer level 3D integration technology, memory stacking, reconfigurable 3D, and monolithic 3D IC. Discusses the use of silicon interposer and organic interposer. Presents architecture, design, and technology implementations for 3D FPGA integration. Describes oxide bonding, Cu/SiO2 hybrid bonding, adhesive bonding, and solder bonding. Addresses the issue of thermal dissipation in 3D integration.

Discover an up-to-date exploration of Embedded and Fan-Out Waver and Panel Level technologies In Embedded and Fan-Out Wafer and Panel Level Packaging Technologies for Advanced Application Spaces: High Performance Compute and System-in-Package, a team of accomplished semiconductor experts delivers an in-depth treatment of various fan-out and embedded die approaches. The book begins with a market analysis of the latest technology trends in Fan-Out and Wafer Level Packaging before moving on to a cost analysis of these solutions. The contributors discuss the new package types for advanced application spaces being created by companies like TSMC, Deca Technologies, and ASE Group. Finally, emerging technologies from academia are explored. Embedded and Fan-Out Wafer and Panel Level Packaging Technologies for Advanced Application Spaces is an indispensable resource for microelectronic package engineers, managers, and decision makers working with OEMs and IDMs. It is also a must-read for professors and graduate students working in microelectronics packaging research.

Today's two-dimensional integrated circuits (2D ICs) generally consist of a single layer of transistors and multiple layers of interconnects that are integrated vertically using inter-layer vias (ILVs). In contrast, three-dimensional ICs (3D ICs) consist of two or more layers of transistors (and multiple interconnect layers) that are integrated vertically using ILVs. For 3D ICs to achieve high energy-efficiency and small form factor, high-density ILVs, such as conventional vias used in today's 2D ICs, are preferred. Monolithic 3D integration can achieve this objective through sequential integration of multiple layers of circuits on a single wafer. However, monolithic 3D integration is difficult because the circuits on the upper layers of monolithic 3D ICs must be fabricated at temperatures below 400 °C; otherwise, the circuits on the lower layers can degrade. Carbon Nanotube Field-Effect Transistors (CNFETs) offer a unique opportunity to achieve monolithic 3D integration. This is because the high-temperature Carbon Nanotube (CNT) growth can be decoupled from CNFET circuit fabrication process through a low-temperature (130°C) CNT transfer technique. Moreover, CNFETs are excellent candidates for building highly energy-efficient digital systems of the future. Unfortunately, CNTs are subject to substantial inherent imperfections resulting from mis-positioned CNTs and metallic CNTs. In this dissertation, we experimentally demonstrate, for the first time, monolithic 3D ICs using CNFETs with the following features: 1. Scalable monolithic 3D integration of CNFET circuits that are immune to mis-positioned CNTs and metallic CNTs. 2. Flexible monolithic 3D integration where complementary CNFETs can be placed on arbitrary layers of monolithic 3D ICs and connected using conventional vias to build monolithic 3D logic circuits. 3. Functional CNFET monolithic 3D circuits operating using supply voltages from 3V down to sub-0.4V, with a fully-complementary CNFET inverter operating at 0.2V. Such CNFET monolithic 3D ICs, together with ultra-low voltage operation, create exciting opportunities for high-performance and highly energy-efficient digital system design.

Introduction of monolithic inter-tier via (MIV) has opened new possibilities in three-dimensional (3D) VLSI design techniques. In this thesis, we propose a non-slicing 3-D floorplan representation to design block-level monolithic 3-D ICs. The new 3-D floorplan representation applied to simulated annealing-based optimization achieves smaller volume, shorter wire length, and lower dynamic power consumption than the Sequence Triple, Sequence Quintuple, and Slicing Tree 3-D floorplanning representations. The smaller size and reduced parasitics of MIV compared to through-silicon via (TSV) make designing cache memory in 3D a good choice. 3D cache memory is expected to achieve better performance with the number of layers increases. In this thesis, we explore different 3D memory design techniques and compare their power, delay, footprint, and energy-delay-product (EDP) values. First, we propose a new design methodology named Compact that consumes less power, incurs smaller delay and overall, shows better EDP compared to traditional 3D memory design techniques. Then we propose a new three-dimensional computer architecture to reduce context switch overhead.