In this work, Metalorganic Chemical Vapor Deposition (MOCVD) of novel GaAs-based semiconductor laser structures with self-organized In-GaAs/GaAs Stranski-Krastanow quantum dots (QDs) as active medium was advanced with regard to the laser characteristics. The three-dimensional morphology of self-organized QDs leads to a significant roughening of thin cap layers on top of QD sheets. Smoother QD cap layers are required, however, to reduce the distance between stacked QD layers and thus to increase the QD volume density for larger modal gain of QD lasers. Hence, the growth of QD lasers was complemented by an in-situ annealing step flattening such corrugated surfaces. The strain of lattice-mismatched selforganized QDs and the untypically low QD deposition temperatures around 500C̊ lead to dislocations and point defects in QD heterostructures. The density of such defects was strongly reduced by in-situ annealing. Lasers with in-situ annealed QDs exhibit room-temperature transparency current densities around 6 A/cm2 per QD sheet at emission wavelengths between 1.14 and 1.16 Mm. The internal quantum efficiency was increased to beyond 90 %. Lasers based on 6-fold stacks of such in-situ annealed QDs show room-temperature peak output powers of 11.7 W in quasi-continuous-wave mode and 4.7 W under continuous-wave operation. This was the first demonstration of optical output powers of QD lasers beyond 10 W. The characteristics of such QD lasers did not exhibit significant changes during lifetime measurements of more than 3000 h at 50C̊ and output powers of 1.0 - 1.5 W. Arsine, widely used as arsenic precursor in MOCVD, is strongly toxic and was therefore replaced in the course of this work by the alternative precursor tertiarybutylarsine (TBAs). The growth of QDs had to be recalibrated as the physical and chemical properties of TBAs differ from those of arsine. The worldwide first QD laser grown using alternative-precursor MOCVD could be demonstrated. Different techniques to grow QDs emitting at the commercially important data communication wavelength of 1.3 Mm were developed and evaluated. Such QD structures were investigated using photoluminescence spectroscopy and transmission electron microscopy. Using InGaAs QDs overgrown with gallium-rich InGaAs quantum films, the room-temperature lasing wavelength could be extended to 1.24 Mm.

This multidisciplinary book provides up-to-date coverage of carrier and spin dynamics and energy transfer and structural interaction among nanostructures. Coverage also includes current device applications such as quantum dot lasers and detectors, as well as future applications to quantum information processing. The book will serve as a reference for anyone working with or planning to work with quantum dots.

Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts

Self-organized InAs/GaAs quantum dot bilayers with nearly perfect size distribution have been grown and characterized. A record small photoluminescence linewidth of 17.5 meV is measured at 300 K, which is almost identical to that measured in the emission from a single dot, indicating that the linewidth is determined by homogeneous broadening.

The book addresses issues associated with physics and technology of injection lasers based on self-organized quantum dots. Fundamental and technological aspects of quantum dot edge-emitting lasers and VCSELs, their current status and future prospects are summarized and reviewed. Basic principles of QD formation using self-organization phenomena are reviewed. Structural and optical properties of self-organized QDs are considered with a number of examples in different material systems. Recent achievements in controlling the QD properties including the effects of vertical stacking, changing the matrix bandgap and the surface density of QDs are reviewed. The authors focus on the use of self-organized quantum dots in laser structures, fabrication and characterization of edge and surface emitting diode lasers, their properties and optimization with special attention paid to the relationship between structural and electronic properties of QDs and laser characteristics. The threshold and power characteristics of the state-of-the-art QD lasers are demonstrated. Issues related to the long-wavelength (1.3-mm) lasers on a GaAs substrate are also addressed and recent results on InGaAsN-based diode lasers presented for the purpose of comparison.

Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

Nanoscale Semiconductor Lasers focuses on specific issues relating to laser nanomaterials and their use in laser technology. The book presents both fundamental theory and a thorough overview of the diverse range of applications that have been developed using laser technology based on novel nanostructures and nanomaterials. Technologies covered include nanocavity lasers, carbon dot lasers, 2D material lasers, plasmonic lasers, spasers, quantum dot lasers, quantum dash and nanowire lasers. Each chapter outlines the fundamentals of the topic and examines material and optical properties set alongside device properties, challenges, issues and trends. Dealing with a scope of materials from organic to carbon nanostructures and nanowires to semiconductor quantum dots, this book will be of interest to graduate students, researchers and scientific professionals in a wide range of fields relating to laser development and semiconductor technologies. - Provides an overview of the active field of nanostructured lasers, illustrating the latest topics and applications - Demonstrates how to connect different classes of material to specific applications - Gives an overview of several approaches to confine and control light emission and amplification using nanostructured materials and nano-scale cavities

This book contains comprehensive reviews of different technologies to harness lattice mismatch in semiconductor heterostructures and their applications in electronic and optoelectronic devices. While the book is a bit focused on metamorphic epitaxial growth, it also includes other methods like compliant substrate, selective area growth, wafer bondi