Mercury cadmium telluride (MCT) is the third most well-regarded semiconductor after silicon and gallium arsenide and is the material of choice for use in infrared sensing and imaging. The reason for this is that MCT can be ‘tuned’ to the desired IR wavelength by varying the cadmium concentration. Mercury Cadmium Telluride: Growth, Properties and Applications provides both an introduction for newcomers, and a comprehensive review of this fascinating material. Part One discusses the history and current status of both bulk and epitaxial growth techniques, Part Two is concerned with the wide range of properties of MCT, and Part Three covers the various device types that have been developed using MCT. Each chapter opens with some historical background and theory before presenting current research. Coverage includes: Bulk growth and properties of MCT and CdZnTe for MCT epitaxial growth Liquid phase epitaxy (LPE) growth Metal-organic vapour phase epitaxy (MOVPE) Molecular beam epitaxy (MBE) Alternative substrates Mechanical, thermal and optical properties of MCT Defects, diffusion, doping and annealing Dry device processing Photoconductive and photovoltaic detectors Avalanche photodiode detectors Room-temperature IR detectors

Semiconductors and Semimetals

The last decade has seen a rapid development and growing importance in the application of nuclear physics methods to material sciences. It is a general desire to understand modern material problems on a microscopic scale, which, due to their inherent microscopic nature, made nuclear techniques highly suitable tools for basic and applied research in this field. The Advanced Study Institute on "Nuclear Physics Applications on Ma terials Science" brought together scientists active in different but closely re lated fields to review and discuss selected topics of bulk properties of metals, semiconductors and insulators as well as properties of surfaces, interfaces and thin films. Most of the excellent lectures and oral presentations of the School are collected in part I of the present volume, while extended abstracts of scientific work presented as posters are added in part II. The pleasant site of the ASI at Viana do Castelo and the northern province of Portugal, Alto Minho, provided the stimulating atmosphere for an in spiring School. Many people contributed to the scientific and social success of the institute. Thanks are especially due to the members of the local organizing committee, N. Ayres de Campos, M. Fernanda da Silva, A. Pedroso de Lima and my co-director J. Carvalho Soares. His permanent involvement in preparing and realization of the ASI was essential for this memorable School.

Completely revised and reorganized while retaining the approachable style of the first edition, Infrared Detectors, Second Edition addresses the latest developments in the science and technology of infrared (IR) detection. Antoni Rogalski, an internationally recognized pioneer in the field, covers the comprehensive range of subjects necessary to un