This book provides a comprehensive overview of the state-of-the-art in group III-nitride based ultraviolet LED and laser technologies, covering different substrate approaches, a review of optical, electronic and structural properties of InAlGaN materials as well as various optoelectronic components. In addition, the book gives an overview of a number of key application areas for UV emitters and detectors, including water purification, phototherapy, sensing, and UV curing. The book is written for researchers and graduate level students in the area of semiconductor materials, optoelectronics and devices as well as developers and engineers in the various application fields of UV emitters and detectors.

Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides

Light emitting diodes (LEDs) are already used in traffic signals, signage lighting, and automotive applications. However, its ultimate goal is to replace traditional illumination through LED lamps since LED lighting significantly reduces energy consumption and cuts down on carbon-dioxide emission. Despite dramatic advances in LED technologies (e.g., growth, doping and processing technologies), however, there remain critical issues for further improvements yet to be achieved for the realization of solid-state lighting. This book aims to provide the readers with some contemporary LED issues, which have not been comprehensively discussed in the published books and, on which the performance of LEDs is seriously dependent. For example, most importantly, there must be a breakthrough in the growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, in particular, in the growth of Al-rich and and In-rich GaN-based semiconductors. The materials quality is directly dependent on the substrates used, such as sapphire, Si, etc. In addition, efficiency droop, growth on different orientations and polarization are also important. Chip processing and packaging technologies are key issues. This book presents a comprehensive review of contemporary LED issues. Given the interest and importance of future research in nitride semiconducting materials and solid state lighting applications, the contents are very timely. The book is composed of chapters written by leading researchers in III-nitride semiconducting materials and device technology. This book will be of interest to scientists and engineers working on LEDs for lighting applications. Postgraduate researchers working on LEDs will also benefit from the issues this book provides.

Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.

III-Nitride Semiconductor Optoelectronics covers the latest breakthrough research and exciting developments in the field of III-nitride compound semiconductors. It includes important topics on the fundamentals of materials growth, characterization, and optoelectronic device applications of III-nitrides. Bulk, quantum well, quantum dot, and nanowire heterostructures are all thoroughly explored. - Contains the latest breakthrough research in III-nitride optoelectronics - Provides a comprehensive presentation that covers the fundamentals of materials growth and characterization and the design and performance characterization of state-of-the-art optoelectronic devices - Presents an in-depth discussion on III-nitride bulk, quantum well, quantum dot, and nanowire technologies

This book provides a comprehensive overview of the state-of-the-art in the development of semiconductor nanostructures and nanophotonic devices. It covers epitaxial growth processes for GaAs- and GaN-based quantum dots and quantum wells, describes the fundamental optical, electronic, and vibronic properties of nanomaterials, and addresses the design and realization of various nanophotonic devices. These include energy-efficient and high-speed vertical cavity surface emitting lasers (VCSELs) and ultra-small metal-cavity nano-lasers for applications in multi-terabus systems; silicon photonic I/O engines based on the hybrid integration of VCSELs for highly efficient chip-to-chip communication; electrically driven quantum key systems based on q-bit and entangled photon emitters and their implementation in real information networks; and AlGaN-based deep UV laser diodes for applications in medical diagnostics, gas sensing, spectroscopy, and 3D printing. The experimental results are accompanied by reviews of theoretical models that describe nanophotonic devices and their base materials. The book details how optical transitions in the active materials, such as semiconductor quantum dots and quantum wells, can be described using a quantum approach to the dynamics of solid-state electrons under quantum confinement and their interaction with phonons, as well as their external pumping by electrical currents. With its broad and detailed scope, this book is indeed a cutting-edge resource for researchers, engineers and graduate-level students in the area of semiconductor materials, optoelectronic devices and photonic systems.

The revised edition of this important book presents updated and expanded coverage of light emitting diodes (LEDs) based on heteroepitaxial GaN on Si substrates, and includes new chapters on tunnel junction LEDs, green/yellow LEDs, and ultraviolet LEDs. Over the last two decades, significant progress has been made in the growth, doping and processing technologies of III-nitride based semiconductors, leading to considerable expectations for nitride semiconductors across a wide range of applications. LEDs are already used in traffic signals, signage lighting, and automotive applications, with the ultimate goal of the global replacement of traditional incandescent and fluorescent lamps, thus reducing energy consumption and cutting down on carbon-dioxide emission. However, some critical issues must be addressed to allow the further improvements required for the large-scale realization of solid-state lighting, and this book aims to provide the readers with details of some contemporary issues on which the performance of LEDs is seriously dependent. Most importantly, it describes why there must be a breakthrough in the growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, in particular, in the growth of Al-rich and In-rich GaN-based semiconductors. The quality of materials is directly dependent on the substrates used, such as sapphire and Si, and the book discusses these as well as topics such as efficiency droop, growth in different orientations, polarization, and chip processing and packaging technologies. Offering an overview of the state of the art in III-Nitride LED science and technology, the book will be a core reference for researchers and engineers involved with the developments of solid state lighting, and required reading for students entering the field.

Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community

This book describes for readers various technical outcomes from the EU-project IoSense. The authors discuss sensor integration, including LEDs, dust sensors, LIDAR for automotive driving and 8 more, demonstrating their use in simulations for the design and fabrication of sensor systems. Readers will benefit from the coverage of topics such as sensor technologies for both discrete and integrated innovative sensor devices, suitable for high volume production, electrical, mechanical, security and software resources for integration of sensor system components into IoT systems and IoT-enabling systems, and IoT sensor system reliability. Describes from component to system level simulation, how to use the available simulation techniques for reaching a proper design with good performance; Explains how to use simulation techniques such as Finite Elements, Multi-body, Dynamic, stochastics and many more in the virtual design of sensor systems; Demonstrates the integration of several sensor solutions (thermal, dust, occupancy, distance, awareness and more) into large-scale system solutions in several industrial domains (Lighting, automotive, transport and more); Includes state-of-the-art simulation techniques, both multi-scale and multi-physics, for use in the electronic industry.