State Of The Art Program On Compound Semiconductors Xli And Nitride And Wide Bandgap Semiconductors For Sensors Photonics And Electronics V
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Author |
: H. M. Ng |
Publisher |
: The Electrochemical Society |
Total Pages |
: 616 |
Release |
: 2004 |
ISBN-10 |
: 1566774195 |
ISBN-13 |
: 9781566774192 |
Rating |
: 4/5 (95 Downloads) |
Synopsis State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics and Electronics V by : H. M. Ng
Author |
: Timothy David Veal |
Publisher |
: CRC Press |
Total Pages |
: 707 |
Release |
: 2011-06-03 |
ISBN-10 |
: 9781439859612 |
ISBN-13 |
: 1439859612 |
Rating |
: 4/5 (12 Downloads) |
Synopsis Indium Nitride and Related Alloys by : Timothy David Veal
Written by recognized leaders in this dynamic and rapidly expanding field, Indium Nitride and Related Alloys provides a clear and comprehensive summary of the present state of knowledge in indium nitride (InN) research. It elucidates and clarifies the often confusing and contradictory scientific literature to provide valuable and rigorous insight into the structural, optical, and electronic properties of this quickly emerging semiconductor material and its related alloys. Drawing from both theoretical and experimental perspectives, it provides a thorough review of all data since 2001 when the band gap of InN was identified as 0.7 eV. The superior transport and optical properties of InN and its alloys offer tremendous potential for a wide range of device applications, including high-efficiency solar cells and chemical sensors. Indeed, the now established narrow band gap nature of InN means that the InGaN alloys cover the entire solar spectrum and InAlN alloys span from the infrared to the ultraviolet. However, with unsolved problems including high free electron density, difficulty in characterizing p-type doping, and the lack of a lattice-matched substrate, indium nitride remains perhaps the least understood III-V semiconductor. Covering the epitaxial growth, experimental characterization, theoretical understanding, and device potential of this semiconductor and its alloys, this book is essential reading for both established researchers and those new to the field.
Author |
: Zhe Chuan Feng |
Publisher |
: World Scientific |
Total Pages |
: 442 |
Release |
: 2006-03-20 |
ISBN-10 |
: 9781908979940 |
ISBN-13 |
: 1908979941 |
Rating |
: 4/5 (40 Downloads) |
Synopsis Iii-nitride Semiconductor Materials by : Zhe Chuan Feng
III-Nitride semiconductor materials — (Al, In, Ga)N — are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment.The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals./a
Author |
: Hadis Morkoç |
Publisher |
: John Wiley & Sons |
Total Pages |
: 1311 |
Release |
: 2009-07-30 |
ISBN-10 |
: 9783527628469 |
ISBN-13 |
: 3527628460 |
Rating |
: 4/5 (69 Downloads) |
Synopsis Handbook of Nitride Semiconductors and Devices, Materials Properties, Physics and Growth by : Hadis Morkoç
The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 1 deals with the properties and growth of GaN. The deposition methods considered are: hydride VPE, organometallic CVD, MBE, and liquid/high pressure growth. Additionally, extended defects and their electrical nature, point defects, and doping are reviewed.
Author |
: Xuying Dong |
Publisher |
: |
Total Pages |
: 370 |
Release |
: 2005 |
ISBN-10 |
: MINN:31951P00861228O |
ISBN-13 |
: |
Rating |
: 4/5 (8O Downloads) |
Synopsis Molecular Beam Epitaxial Growth and Characterization of the Manganese-based Heusler Alloy Films for Application in Spintronics by : Xuying Dong
Author |
: |
Publisher |
: |
Total Pages |
: 1066 |
Release |
: 2004 |
ISBN-10 |
: UCSD:31822033892977 |
ISBN-13 |
: |
Rating |
: 4/5 (77 Downloads) |
Synopsis Journal of the Electrochemical Society by :
Author |
: |
Publisher |
: |
Total Pages |
: |
Release |
: 2004 |
ISBN-10 |
: 1566774195 |
ISBN-13 |
: 9781566774192 |
Rating |
: 4/5 (95 Downloads) |
Synopsis Fifth Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics by :
Author |
: Ayse Erol |
Publisher |
: Springer Science & Business Media |
Total Pages |
: 607 |
Release |
: 2008-01-12 |
ISBN-10 |
: 9783540745297 |
ISBN-13 |
: 3540745297 |
Rating |
: 4/5 (97 Downloads) |
Synopsis Dilute III-V Nitride Semiconductors and Material Systems by : Ayse Erol
This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.
Author |
: Ayse Erol |
Publisher |
: Springer |
Total Pages |
: 592 |
Release |
: 2009-09-02 |
ISBN-10 |
: 3540842993 |
ISBN-13 |
: 9783540842996 |
Rating |
: 4/5 (93 Downloads) |
Synopsis Dilute III-V Nitride Semiconductors and Material Systems by : Ayse Erol
This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.
Author |
: Bernard Gil |
Publisher |
: |
Total Pages |
: 280 |
Release |
: 2014-07-31 |
ISBN-10 |
: 3319068067 |
ISBN-13 |
: 9783319068060 |
Rating |
: 4/5 (67 Downloads) |
Synopsis Physics of Wurtzite Nitrides and Oxides by : Bernard Gil