Written by recognized leaders in this dynamic and rapidly expanding field, Indium Nitride and Related Alloys provides a clear and comprehensive summary of the present state of knowledge in indium nitride (InN) research. It elucidates and clarifies the often confusing and contradictory scientific literature to provide valuable and rigorous insight into the structural, optical, and electronic properties of this quickly emerging semiconductor material and its related alloys. Drawing from both theoretical and experimental perspectives, it provides a thorough review of all data since 2001 when the band gap of InN was identified as 0.7 eV. The superior transport and optical properties of InN and its alloys offer tremendous potential for a wide range of device applications, including high-efficiency solar cells and chemical sensors. Indeed, the now established narrow band gap nature of InN means that the InGaN alloys cover the entire solar spectrum and InAlN alloys span from the infrared to the ultraviolet. However, with unsolved problems including high free electron density, difficulty in characterizing p-type doping, and the lack of a lattice-matched substrate, indium nitride remains perhaps the least understood III-V semiconductor. Covering the epitaxial growth, experimental characterization, theoretical understanding, and device potential of this semiconductor and its alloys, this book is essential reading for both established researchers and those new to the field.

III-Nitride semiconductor materials — (Al, In, Ga)N — are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment.The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals./a

The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 1 deals with the properties and growth of GaN. The deposition methods considered are: hydride VPE, organometallic CVD, MBE, and liquid/high pressure growth. Additionally, extended defects and their electrical nature, point defects, and doping are reviewed.

This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community. The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.

The present book on electrical, optical, magnetic and thermal properties of materials is in many aspects different from other introductory texts in solid state physics. First of all, this book is written for engineers, particularly materials and electrical engineers who want to gain a fundamental under standing of semiconductor devices, magnetic materials, lasers, alloys, etc. Second, it stresses concepts rather than mathematical formalism, which should make the presentation relatively easy to understand. Thus, this book provides a thorough preparation for advanced texts, monographs, or special ized journal articles. Third, this book is not an encyclopedia. The selection oftopics is restricted to material which is considered to be essential and which can be covered in a 15-week semester course. For those professors who want to teach a two-semester course, supplemental topics can be found which deepen the understanding. (These sections are marked by an asterisk [*]. ) Fourth, the present text leaves the teaching of crystallography, X-ray diffrac tion, diffusion, lattice defects, etc. , to those courses which specialize in these subjects. As a rule, engineering students learn this material at the beginning of their upper division curriculum. The reader is, however, reminded of some of these topics whenever the need arises. Fifth, this book is distinctly divided into five self-contained parts which may be read independently.

In today's world, the range of technologies with the potential to threaten the security of U.S. military forces is extremely broad. These include developments in explosive materials, sensors, control systems, robotics, satellite systems, and computing power, to name just a few. Such technologies have not only enhanced the capabilities of U.S. military forces, but also offer enhanced offensive capabilities to potential adversaries - either directly through the development of more sophisticated weapons, or more indirectly through opportunities for interrupting the function of defensive U.S. military systems. Passive and active electro-optical (EO) sensing technologies are prime examples. Laser Radar considers the potential of active EO technologies to create surprise; i.e., systems that use a source of visible or infrared light to interrogate a target in combination with sensitive detectors and processors to analyze the returned light. The addition of an interrogating light source to the system adds rich new phenomenologies that enable new capabilities to be explored. This report evaluates the fundamental, physical limits to active EO sensor technologies with potential military utility; identifies key technologies that may help overcome the impediments within a 5-10 year timeframe; considers the pros and cons of implementing each existing or emerging technology; and evaluates the potential uses of active EO sensing technologies, including 3D mapping and multi-discriminate laser radar technologies.

An accessible introduction for electronic engineers, computer scientists and physicists. The overview covers all aspects from underlying technologies to circuits and systems. The challenge of nanoelectronics is not only to manufacture minute structures but also to develop innovative systems for effective integration of the billions of devices. On the system level, various architectures are presented and important features of systems, such as design strategies, processing power, and reliability are discussed. Many specific technologies are presented, including molecular devices, quantum electronic devices, resonant tunnelling devices, single electron devices, superconducting devices, and even devices for DNA and quantum computing. The book also compares these devices with current silicon technologies and discusses limits of electronics and the future of nanosystems.