Epitaxial Growth Processing And Characterisation Of Iii V Semiconductor Micro And Nanostructures
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Author |
: Otto Zsebök |
Publisher |
: |
Total Pages |
: 46 |
Release |
: 1997 |
ISBN-10 |
: OCLC:186706465 |
ISBN-13 |
: |
Rating |
: 4/5 (65 Downloads) |
Synopsis Epitaxial Growth, Processing and Characterisation of III-V Semiconductor Micro- and Nanostructures by : Otto Zsebök
Author |
: Magnus Borgström |
Publisher |
: |
Total Pages |
: 51 |
Release |
: 2003 |
ISBN-10 |
: 9162858769 |
ISBN-13 |
: 9789162858766 |
Rating |
: 4/5 (69 Downloads) |
Synopsis Epitaxial Growth, Processing, and Characterization of Semiconductor Nanostructures by : Magnus Borgström
Author |
: Tom Kuech |
Publisher |
: Elsevier |
Total Pages |
: 1384 |
Release |
: 2014-11-02 |
ISBN-10 |
: 9780444633057 |
ISBN-13 |
: 0444633057 |
Rating |
: 4/5 (57 Downloads) |
Synopsis Handbook of Crystal Growth by : Tom Kuech
Volume IIIA Basic TechniquesHandbook of Crystal Growth, Second Edition Volume IIIA (Basic Techniques), edited by chemical and biological engineering expert Thomas F. Kuech, presents the underpinning science and technology associated with epitaxial growth as well as highlighting many of the chief and burgeoning areas for epitaxial growth. Volume IIIA focuses on major growth techniques which are used both in the scientific investigation of crystal growth processes and commercial development of advanced epitaxial structures. Techniques based on vacuum deposition, vapor phase epitaxy, and liquid and solid phase epitaxy are presented along with new techniques for the development of three-dimensional nano-and micro-structures.Volume IIIB Materials, Processes, and TechnologyHandbook of Crystal Growth, Second Edition Volume IIIB (Materials, Processes, and Technology), edited by chemical and biological engineering expert Thomas F. Kuech, describes both specific techniques for epitaxial growth as well as an array of materials-specific growth processes. The volume begins by presenting variations on epitaxial growth process where the kinetic processes are used to develop new types of materials at low temperatures. Optical and physical characterizations of epitaxial films are discussed for both in situ and exit to characterization of epitaxial materials. The remainder of the volume presents both the epitaxial growth processes associated with key technology materials as well as unique structures such as monolayer and two dimensional materials.Volume IIIA Basic Techniques - Provides an introduction to the chief epitaxial growth processes and the underpinning scientific concepts used to understand and develop new processes. - Presents new techniques and technologies for the development of three-dimensional structures such as quantum dots, nano-wires, rods and patterned growth - Introduces and utilizes basic concepts of thermodynamics, transport, and a wide cross-section of kinetic processes which form the atomic level text of growth process Volume IIIB Materials, Processes, and Technology - Describes atomic level epitaxial deposition and other low temperature growth techniques - Presents both the development of thermal and lattice mismatched streams as the techniques used to characterize the structural properties of these materials - Presents in-depth discussion of the epitaxial growth techniques associated with silicone silicone-based materials, compound semiconductors, semiconducting nitrides, and refractory materials
Author |
: Gyu-Chul Yi |
Publisher |
: Springer Science & Business Media |
Total Pages |
: 347 |
Release |
: 2012-01-13 |
ISBN-10 |
: 9783642224805 |
ISBN-13 |
: 3642224806 |
Rating |
: 4/5 (05 Downloads) |
Synopsis Semiconductor Nanostructures for Optoelectronic Devices by : Gyu-Chul Yi
This book presents the fabrication of optoelectronic nanodevices. The structures considered are nanowires, nanorods, hybrid semiconductor nanostructures, wide bandgap nanostructures for visible light emitters and graphene. The device applications of these structures are broadly explained. The book deals also with the characterization of semiconductor nanostructures. It appeals to researchers and graduate students.
Author |
: Zuoming Zhu |
Publisher |
: |
Total Pages |
: 290 |
Release |
: 2006 |
ISBN-10 |
: OCLC:65530340 |
ISBN-13 |
: |
Rating |
: 4/5 (40 Downloads) |
Synopsis Epitaxial Growth and Characterization of II-VI-semiconductor, One Dimensional Nanostructures and Thin Films by : Zuoming Zhu
Author |
: Sukgeun Choi |
Publisher |
: |
Total Pages |
: 246 |
Release |
: 2006 |
ISBN-10 |
: MINN:31951P01038594U |
ISBN-13 |
: |
Rating |
: 4/5 (4U Downloads) |
Synopsis Epitaxial Growth and Characterization of Narrow Bandgap III-V Semiconductors and Related Semimetals by : Sukgeun Choi
Author |
: Victoria Anne Grant |
Publisher |
: |
Total Pages |
: 470 |
Release |
: 2008 |
ISBN-10 |
: OCLC:1252122032 |
ISBN-13 |
: |
Rating |
: 4/5 (32 Downloads) |
Synopsis Growth and Characterisation of III-IV Semiconductor Nanostructures by : Victoria Anne Grant
Author |
: Maria Fahed |
Publisher |
: |
Total Pages |
: 0 |
Release |
: 2016 |
ISBN-10 |
: OCLC:971243014 |
ISBN-13 |
: |
Rating |
: 4/5 (14 Downloads) |
Synopsis Selective Area Growth of In-plane III-V Nanostructures Using Molecular Beam Epitaxy by : Maria Fahed
The use of nanostructures such as quantum dots and nanowires is a very promising way of integration of III-V semiconductors on silicon, since it allows answering most of the associated material challenges. Together with the continuous trend in device scaling, it should lead to the development of new highly efficient opto- and microelectronic circuits. This appeals for a full mastering of the growth and processing of 3D architectures at the nanometer scale. Consequently, the present work aims at investigating the selective area growth (SAG) of III-V semiconductors by molecular beam epitaxy (MBE) in nanoscale patterns. Homoepitaxial SAG of InAs and InP are first reported in order to show that the growth conditions, the opening width and the stripe directions allow tailoring the nanocrystal shape. We then achieve the SAG of in-plane GaSb nanotemplates on a highly mismatched GaAs (001) substrate at low temperature by atomic hydrogen assisted MBE. We highlight the impact of the nano-stripe orientation as well as the role of the Sb/Ga flux ratio on the strain relaxation of GaSb. Finally, from this study, we demonstrate how these GaSb nanotemplates can be used for subsequent growth of in-plane InAs nanowires.
Author |
: Mohamed Henini |
Publisher |
: Elsevier |
Total Pages |
: 790 |
Release |
: 2018-06-27 |
ISBN-10 |
: 9780128121375 |
ISBN-13 |
: 0128121378 |
Rating |
: 4/5 (75 Downloads) |
Synopsis Molecular Beam Epitaxy by : Mohamed Henini
Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Author |
: Tariq Al Zoubi |
Publisher |
: |
Total Pages |
: |
Release |
: 2013 |
ISBN-10 |
: OCLC:863891056 |
ISBN-13 |
: |
Rating |
: 4/5 (56 Downloads) |
Synopsis Molecular Beam Epitaxial Growth of III-V Semiconductor Nanostructures on Silicon Substrates by : Tariq Al Zoubi