This book provides an in-depth description of x-ray microanalysis in the electron microscope. It is sufficiently detailed to ensure that novices will understand the nuances of high-quality EDX analysis. Includes information about hardware design as well as the physics of x-ray generation, absorption and detection, and most post-detection data processing. Details on electron optics and electron probe formation allow the novice to make sensible adjustments to the electron microscope in order to set up a system which optimises analysis. It also helps the reader determine which microanalytical method is more suitable for their planned application.

This book has evolved by processes of selection and expansion from its predecessor, Practical Scanning Electron Microscopy (PSEM), published by Plenum Press in 1975. The interaction of the authors with students at the Short Course on Scanning Electron Microscopy and X-Ray Microanalysis held annually at Lehigh University has helped greatly in developing this textbook. The material has been chosen to provide a student with a general introduction to the techniques of scanning electron microscopy and x-ray microanalysis suitable for application in such fields as biology, geology, solid state physics, and materials science. Following the format of PSEM, this book gives the student a basic knowledge of (1) the user-controlled functions of the electron optics of the scanning electron microscope and electron microprobe, (2) the characteristics of electron-beam-sample inter actions, (3) image formation and interpretation, (4) x-ray spectrometry, and (5) quantitative x-ray microanalysis. Each of these topics has been updated and in most cases expanded over the material presented in PSEM in order to give the reader sufficient coverage to understand these topics and apply the information in the laboratory. Throughout the text, we have attempted to emphasize practical aspects of the techniques, describing those instru ment parameters which the microscopist can and must manipulate to obtain optimum information from the specimen. Certain areas in particular have been expanded in response to their increasing importance in the SEM field. Thus energy-dispersive x-ray spectrometry, which has undergone a tremendous surge in growth, is treated in substantial detail.

Analytical electron microscopy is one of the most powerful tools today for characterization of the advanced materials that support the nanotechnology of the twenty-first century. In this book the authors clearly explain both the basic principles and the latest developments in the field. In addition to a fundamental description of the inelastic scattering process, an explanation of the constituent hardware is provided. Standard quantitative analytical techniques employing electron energy-loss spectroscopy and energy-dispersive X-ray spectroscopy are also explained, along with elemental mapping techniques. Included are sections on convergent beam electron diffraction and electron holography utilizing the field emission gun. With generous use of illustrations and experimental data, this book is a valuable resource for anyone concerned with materials characterization, electron microscopy, materials science, crystallography, and instrumentation.

This "must have" reference work for semiconductor professionals and researchers provides a basic understanding of how the most commonly used tools and techniques in silicon-based semiconductors are applied to understanding the root cause of electrical failures in integrated circuits.

This book provides a very basic introduction to electron microscopy and energy dispersive spectrometry (EDS). It has the largest compiled collection of EDS spectra ever published and covers most common rock forming minerals. In addition, it provides a key to help the novice wade through the large number of spectra.

This book has its origins in the intensive short courses on scanning elec tron microscopy and x-ray microanalysis which have been taught annually at Lehigh University since 1972. In order to provide a textbook containing the materials presented in the original course, the lecturers collaborated to write the book Practical Scanning Electron Microscopy (PSEM), which was published by Plenum Press in 1975. The course con tinued to evolve and expand in the ensuing years, until the volume of material to be covered necessitated the development of separate intro ductory and advanced courses. In 1981 the lecturers undertook the project of rewriting the original textbook, producing the volume Scan ning Electron Microscopy and X-Ray Microanalysis (SEMXM). This vol ume contained substantial expansions of the treatment of such basic material as electron optics, image formation, energy-dispersive x-ray spectrometry, and qualitative and quantitative analysis. At the same time, a number of chapters, which had been included in the PSEM vol ume, including those on magnetic contrast and electron channeling con trast, had to be dropped for reasons of space. Moreover, these topics had naturally evolved into the basis of the advanced course. In addition, the evolution of the SEM and microanalysis fields had resulted in the devel opment of new topics, such as digital image processing, which by their nature became topics in the advanced course.

Since the publication in 1979 of Introduction to Analytical Electron Microscopy (ed. J. J. Hren, J. I. Goldstein, and D. C. Joy; Plenum Press), analytical electron microscopy has continued to evolve and mature both as a topic for fundamental scientific investigation and as a tool for inorganic and organic materials characterization. Significant strides have been made in our understanding of image formation, electron diffraction, and beam/specimen interactions, both in terms of the "physics of the processes" and their practical implementation in modern instruments. It is the intent of the editors and authors of the current text, Principles of Analytical Electron Microscopy, to bring together, in one concise and readily accessible volume, these recent advances in the subject. The text begins with a thorough discussion of fundamentals to lay a foundation for today's state-of-the-art microscopy. All currently important areas in analytical electron microscopy-including electron optics, electron beam/specimen interactions, image formation, x-ray microanalysis, energy-loss spectroscopy, electron diffraction and specimen effects-have been given thorough attention. To increase the utility of the volume to a broader cross section of the scientific community, the book's approach is, in general, more descriptive than mathematical. In some areas, however, mathematical concepts are dealt with in depth, increasing the appeal to those seeking a more rigorous treatment of the subject.

This book concisely illustrates the techniques of major surface analysis and their applications to a few key examples. Surfaces play crucial roles in various interfacial processes, and their electronic/geometric structures rule the physical/chemical properties. In the last several decades, various techniques for surface analysis have been developed in conjunction with advances in optics, electronics, and quantum beams. This book provides a useful resource for a wide range of scientists and engineers from students to professionals in understanding the main points of each technique, such as principles, capabilities and requirements, at a glance. It is a contemporary encyclopedia for selecting the appropriate method depending on the reader's purpose.

Scanning electr on microscopy (SEM) and x-ray microanalysis can produce magnified images and in situ chemical information from virtually any type of specimen. The two instruments generally operate in a high vacuum and a very dry environment in order to produce the high energy beam of electrons needed for imaging and analysis. With a few notable exceptions, most specimens destined for study in the SEM are poor conductors and composed of beam sensitive light elements containing variable amounts of water. In the SEM, the imaging system depends on the specimen being sufficiently electrically conductive to ensure that the bulk of the incoming electrons go to ground. The formation of the image depends on collecting the different signals that are scattered as a consequence of the high energy beam interacting with the sample. Backscattered electrons and secondary electrons are generated within the primary beam-sample interactive volume and are the two principal signals used to form images. The backscattered electron coefficient ( ? ) increases with increasing atomic number of the specimen, whereas the secondary electron coefficient ( ? ) is relatively insensitive to atomic number. This fundamental diff- ence in the two signals can have an important effect on the way samples may need to be prepared. The analytical system depends on collecting the x-ray photons that are generated within the sample as a consequence of interaction with the same high energy beam of primary electrons used to produce images.

This book covers state-of-the-art techniques commonly used in modern materials characterization. Two important aspects of characterization, materials structures and chemical analysis, are included. Widely used techniques, such as metallography (light microscopy), X-ray diffraction, transmission and scanning electron microscopy, are described. In addition, the book introduces advanced techniques, including scanning probe microscopy. The second half of the book accordingly presents techniques such as X-ray energy dispersive spectroscopy (commonly equipped in the scanning electron microscope), fluorescence X-ray spectroscopy, and popular surface analysis techniques (XPS and SIMS). Finally, vibrational spectroscopy (FTIR and Raman) and thermal analysis are also covered.