Bridges the gap between device modelling and analog circuit design. Includes dedicated software enabling actual circuit design. Covers the three significant models: BSIM3, Model 9 &, and EKV. Presents practical guidance on device development and circuit implementation. The authors offer a combination of extensive academic and industrial experience.

CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 æm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (Global Positioning System) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.

Reliability concerns and the limitations of process technology can sometimes restrict the innovation process involved in designing nano-scale analog circuits. The success of nano-scale analog circuit design requires repeat experimentation, correct analysis of the device physics, process technology, and adequate use of the knowledge database. Starting with the basics, Nano-Scale CMOS Analog Circuits: Models and CAD Techniques for High-Level Design introduces the essential fundamental concepts for designing analog circuits with optimal performances. This book explains the links between the physics and technology of scaled MOS transistors and the design and simulation of nano-scale analog circuits. It also explores the development of structured computer-aided design (CAD) techniques for architecture-level and circuit-level design of analog circuits. The book outlines the general trends of technology scaling with respect to device geometry, process parameters, and supply voltage. It describes models and optimization techniques, as well as the compact modeling of scaled MOS transistors for VLSI circuit simulation. • Includes two learning-based methods: the artificial neural network (ANN) and the least-squares support vector machine (LS-SVM) method • Provides case studies demonstrating the practical use of these two methods • Explores circuit sizing and specification translation tasks • Introduces the particle swarm optimization technique and provides examples of sizing analog circuits • Discusses the advanced effects of scaled MOS transistors like narrow width effects, and vertical and lateral channel engineering Nano-Scale CMOS Analog Circuits: Models and CAD Techniques for High-Level Design describes the models and CAD techniques, explores the physics of MOS transistors, and considers the design challenges involving statistical variations of process technology parameters and reliability constraints related to circuit design.

Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters. Written by its developers, this book provides a comprehensive treatment of the EKV charge-based model of the MOS transistor for the design and simulation of low-power analog and RF ICs. Clearly split into three parts, the authors systematically examine: the basic long-channel intrinsic charge-based model, including all the fundamental aspects of the EKV MOST model such as the basic large-signal static model, the noise model, and a discussion of temperature effects and matching properties; the extended charge-based model, presenting important information for understanding the operation of deep-submicron devices; the high-frequency model, setting out a complete MOS transistor model required for designing RF CMOS integrated circuits. Practising engineers and circuit designers in the semiconductor device and electronics systems industry will find this book a valuable guide to the modelling of MOS transistors for integrated circuits. It is also a useful reference for advanced students in electrical and computer engineering.

The essentials of analog circuit design with a unique all-region MOSFET modeling approach.

The book covers the CMOS-based millimeter wave circuits and devices and presents methods and design techniques to use CMOS technology for circuits operating beyond 100 GHz. Coverage includes a detailed description of both active and passive devices, including modeling techniques and performance optimization. Various mm-wave circuit blocks are discussed, emphasizing their design distinctions from low-frequency design methodologies. This book also covers a device-oriented circuit design technique that is essential for ultra high speed circuits and gives some examples of device/circuit co-design that can be used for mm-wave technology.

Amazon.com’s Top-Selling DSP Book for Seven Straight Years—Now Fully Updated! Understanding Digital Signal Processing, Third Edition, is quite simply the best resource for engineers and other technical professionals who want to master and apply today’s latest DSP techniques. Richard G. Lyons has updated and expanded his best-selling second edition to reflect the newest technologies, building on the exceptionally readable coverage that made it the favorite of DSP professionals worldwide. He has also added hands-on problems to every chapter, giving students even more of the practical experience they need to succeed. Comprehensive in scope and clear in approach, this book achieves the perfect balance between theory and practice, keeps math at a tolerable level, and makes DSP exceptionally accessible to beginners without ever oversimplifying it. Readers can thoroughly grasp the basics and quickly move on to more sophisticated techniques. This edition adds extensive new coverage of FIR and IIR filter analysis techniques, digital differentiators, integrators, and matched filters. Lyons has significantly updated and expanded his discussions of multirate processing techniques, which are crucial to modern wireless and satellite communications. He also presents nearly twice as many DSP Tricks as in the second edition—including techniques even seasoned DSP professionals may have overlooked. Coverage includes New homework problems that deepen your understanding and help you apply what you’ve learned Practical, day-to-day DSP implementations and problem-solving throughout Useful new guidance on generalized digital networks, including discrete differentiators, integrators, and matched filters Clear descriptions of statistical measures of signals, variance reduction by averaging, and real-world signal-to-noise ratio (SNR) computation A significantly expanded chapter on sample rate conversion (multirate systems) and associated filtering techniques New guidance on implementing fast convolution, IIR filter scaling, and more Enhanced coverage of analyzing digital filter behavior and performance for diverse communications and biomedical applications Discrete sequences/systems, periodic sampling, DFT, FFT, finite/infinite impulse response filters, quadrature (I/Q) processing, discrete Hilbert transforms, binary number formats, and much more

This comprehensive compendium describes the basic modeling techniques for silicon-based semiconductor devices, introduces the basic concepts of silicon-based passive and active devices, and provides its state-of-the-art modeling and equivalent circuit parameter extraction methods.The unique reference text benefits practicing engineers, technicians, senior undergraduate and first-year graduate students working in the areas of RF, microwave and solid-state device, and integrated circuit design.

This book provides the most comprehensive and in-depth coverage of the latest circuit design developments in RF CMOS technology. It is a practical and cutting-edge guide, packed with proven circuit techniques and innovative design methodologies for solving challenging problems associated with RF integrated circuits and systems. This invaluable resource features a collection of the finest design practices that may soon drive the system-on-chip revolution. Using this book's state-of-the-art design techniques, one can apply existing technologies in novel ways and to create new circuit designs for the future.

This book enables circuit designers to reduce the errors introduced by the fundamental limitations (noise, bandwith, and signal power) and electromagnetic interference (EMI) in negative-feedback amplifiers. The authors describe a systematic design approach for application specific negative-feedback amplifiers, with specified signal-to-error ratio (SER). This approach enables designers to calculate noise, bandwidth, EMI, and the required bias parameters of the transistors used in application specific amplifiers in order to meet the SER requirements.