This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.

This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. - Expert contributors - Reviews of the most important recent literature - Clear illustrations - A broad view, including examination of defects in different semiconductors

The contents of this volume represent most of the papers presented either orally or as posters at the international conference held in Les rd th Arcs, Savoie, from June 29 to July 3 1987. The declared objective of the conference was to bring together specialists working in various fields, both academic and applied, to examine the state of our under standing of the physics of amorphous sioz from the point of view of its structure, defects (both intrinsic and extrinsic), its ability to trans port current and to trap charges, its sensitivity to irradiation, etc. For this reason, the proceedings is divided, as was the conference schedule, into a number of sections starting from a rather academic viewpoint of the internal structure of idealized Si0 and progressing 2 towards subjects of increasing technological importance such as charge transport and trapping and breakdown in thin films. The proceedings terminates with a section on novel applications of amorphous SiOz and in particular, buried oxide layers formed by ion implantation. Although every effort was made at the conference to ensure that each presentation occured in its most obvious session, in editing the proceedings we have taken the liberty of changing the order where it seems that a paper was in fact more appropriate to an alternative section. In any event, because of the natural overlap of subjects, many papers could have been suitably placed in several different sections.

Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000

This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.

This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with the surface or other interfaces. A set of generalized equations that describe diffusion of impurity atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed, and the simulation of many doping processes used in microelectronics is carried out.Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals is a useful text for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. It helps readers acquire a deep understanding of the physics of diffusion and demonstrates the practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.