The Advanced Study Institute provided an opportunity for researchers in universities, industry and National and International Laboratories, from the disciplines ofmaterials science, physics, chemistry and engineering to meet together in an assessment of the impact of electron and scanning probe microscopy on advanced material research. Since these researchers have traditionally relied upon different approaches, due to their different scientific background, to advanced materials problem solving, presentations and discussion within the Institute sessions were initially devoted to developing a set ofmutually understood basic concepts, inherently related to different techniques ofcharacterization by microscopy and spectroscopy. Particular importance was placed on Electron Energy Loss Spectroscopy (EELS), Scanning Probe Microscopy (SPM), High Resolution Transmission and Scanning Electron Microscopy (HRTEM, HRSTEM) and Environmental Scanning Electron Microscopy (ESEM). It was recognized that the electronic structure derived directly from EELS analysis as well as from atomic positions in HRTEM or High Angle Annular Dark Field STEM can be used to understand the macroscopic behaviour of materials. The emphasis, however, was upon the analysis of the electronic band structure of grain boundaries, fundamental for the understanding of macroscopic quantities such as strength, cohesion, plasticity, etc.

Much of this book was written during a sabbatical visit by J. C. H. S. to the Max Planck Institute in Stuttgart during 1991. We are therefore grateful to Professors M. Ruhle and A. Seeger for acting as hosts during this time, and to the Alexander von Humbolt Foundation for the Senior Scientist Award which made this visit possible. The Ph. D. work of one of us (J. M. Z. ) has also provided much of the background for the book, together with our recent papers with various collaborators. Of these, perhaps the most important stimulus to our work on convergent-beam electron diffraction resulted from a visit to the National Science Foundation's Electron Microscopy Facility at Arizona State University by Professor R. H(lJier in 1988, and from a return visit to Trondheim by J. C. H. S. in 1990. We are therefore particularly grateful to Professor H(lJier and his students and co-workers for their encouragement and collaboration. At ASU, we owe a particular debt of gratitude to Professor M. O'Keeffe for his encouragement. The depth of his under standing of crystal structures and his role as passionate skeptic have frequently been invaluable. Professor John Cowley has also been an invaluable sounding board for ideas, and was responsible for much of the experimental and theoretical work on coherent nanodiffraction. The sections on this topic derive mainly from collaborations by J. C. H. S. with him in the seventies.

Advanced techniques for characterizing thin film growth in situ help to develop improved understanding and faster diagnosis of issues with the process. In situ characterization of thin film growth reviews current and developing techniques for characterizing the growth of thin films, covering an important gap in research.Part one covers electron diffraction techniques for in situ study of thin film growth, including chapters on topics such as reflection high-energy electron diffraction (RHEED) and inelastic scattering techniques. Part two focuses on photoemission techniques, with chapters covering ultraviolet photoemission spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS) and in situ spectroscopic ellipsometry for characterization of thin film growth. Finally, part three discusses alternative in situ characterization techniques. Chapters focus on topics such as ion beam surface characterization, real time in situ surface monitoring of thin film growth, deposition vapour monitoring and the use of surface x-ray diffraction for studying epitaxial film growth.With its distinguished editors and international team of contributors, In situ characterization of thin film growth is a standard reference for materials scientists and engineers in the electronics and photonics industries, as well as all those with an academic research interest in this area. - Chapters review electron diffraction techniques, including the methodology for observations and measurements - Discusses the principles and applications of photoemission techniques - Examines alternative in situ characterisation techniques

This volume expands and updates the coverage in the authors' popular 1992 book, Electron Microdiffraction. As the title implies, the focus of the book has changed from electron microdiffraction and convergent beam electron diffraction to all forms of advanced transmission electron microscopy. Special attention is given to electron diffraction and imaging, including high-resolution TEM and STEM imaging, and the application of these methods to crystals, their defects, and nanostructures. The authoritative text summarizes and develops most of the useful knowledge which has been gained over the years from the study of the multiple electron scattering problem, the recent development of aberration correctors and their applications to materials structure characterization, as well as the authors' extensive teaching experience in these areas. Advanced Transmission Electron Microscopy: Imaging and Diffraction in Nanoscience is ideal for use as an advanced undergraduate or graduate level text in support of course materials in Materials Science, Physics or Chemistry departments.

The aim of this book is to outline the physics of image formation, electron specimen interactions and image interpretation in transmission electron mic roscopy. The book evolved from lectures delivered at the University of Munster and is a revised version of the first part of my earlier book Elek tronenmikroskopische Untersuchungs- und Priiparationsmethoden, omitting the part which describes specimen-preparation methods. In the introductory chapter, the different types of electron microscope are compared, the various electron-specimen interactions and their applications are summarized and the most important aspects of high-resolution, analytical and high-voltage electron microscopy are discussed. The optics of electron lenses is discussed in Chapter 2 in order to bring out electron-lens properties that are important for an understanding of the function of an electron microscope. In Chapter 3, the wave optics of elec trons and the phase shifts by electrostatic and magnetic fields are introduced; Fresnel electron diffraction is treated using Huygens' principle. The recogni tion that the Fraunhofer-diffraction pattern is the Fourier transform of the wave amplitude behind a specimen is important because the influence of the imaging process on the contrast transfer of spatial frequencies can be described by introducing phase shifts and envelopes in the Fourier plane. In Chapter 4, the elements of an electron-optical column are described: the electron gun, the condenser and the imaging system. A thorough understanding of electron-specimen interactions is essential to explain image contrast.

In this book, the bases of imaging and diffraction in transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) are explained in the style of a textbook. The book focuses on the explanation of electron microscopic imaging of TEM and STEM without including in the main text distracting information on basic knowledge of crystal diffraction, wave optics, electron lens, and scattering and diffraction theories, which are explained separately in the appendices. A comprehensive explanation is provided on the basis of Fourier transform theory, and this approach is unique in comparison with other advanced resources on high-resolution electron microscopy. With the present textbook, readers are led to understand the essence of the imaging theories of TEM and STEM without being diverted by other knowledge of electron microscopy. The up-to-date information in this book, particularly on imaging details of STEM and aberration corrections, is valuable worldwide for today’s graduate students and professionals just starting their careers.

This text is a companion volume to Transmission Electron Microscopy: A Textbook for Materials Science by Williams and Carter. The aim is to extend the discussion of certain topics that are either rapidly changing at this time or that would benefit from more detailed discussion than space allowed in the primary text. World-renowned researchers have contributed chapters in their area of expertise, and the editors have carefully prepared these chapters to provide a uniform tone and treatment for this exciting material. The book features an unparalleled collection of color figures showcasing the quality and variety of chemical data that can be obtained from today’s instruments, as well as key pitfalls to avoid. As with the previous TEM text, each chapter contains two sets of questions, one for self assessment and a second more suitable for homework assignments. Throughout the book, the style follows that of Williams & Carter even when the subject matter becomes challenging—the aim is always to make the topic understandable by first-year graduate students and others who are working in the field of Materials Science Topics covered include sources, in-situ experiments, electron diffraction, Digital Micrograph, waves and holography, focal-series reconstruction and direct methods, STEM and tomography, energy-filtered TEM (EFTEM) imaging, and spectrum imaging. The range and depth of material makes this companion volume essential reading for the budding microscopist and a key reference for practicing researchers using these and related techniques.

Electron backscatter diffraction is a very powerful and relatively new materials characterization technique aimed at the determination of crystallographic texture, grain boundary character distributions, lattice strain, phase identification, and much more. The purpose of this book is to provide the fundamental basis for electron backscatter diffraction in materials science, the current state of both hardware and software, and illustrative examples of the applications of electron backscatter diffraction to a wide-range of materials including undeformed and deformed metals and alloys, ceramics, and superconductors. The text has been substantially revised from the first edition, and the authors have kept the format as close as possible to the first edition text. The new developments covered in this book include a more comphrensive coverage of the fundamentals not covered in the first edition or other books in the field, the advances in hardware and software since the first edition was published, and current examples of application of electron backscatter diffraction to solve challenging problems in materials science and condensed-matter physics.

This fully corrected second impression of the classic 2006 text on microscopy runs to more than 1,000 pages and covers up-to-the-minute developments in the field. The two-volume work brings together a slew of experts who present comprehensive reviews of all the latest instruments and new versions of the older ones, as well as their associated operational techniques. The chapters draw attention to their principal areas of application. A huge range of subjects are benefiting from these new tools, including semiconductor physics, medicine, molecular biology, the nanoworld in general, magnetism, and ferroelectricity. This fascinating book will be an indispensable guide for a wide range of scientists in university laboratories as well as engineers and scientists in industrial R&D departments.