Theoretical Analysis Of Electronic Properties And Transport Phenomena In Semiconductor Nanostructures
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Author |
: Dejan Jovanovic |
Publisher |
: |
Total Pages |
: 206 |
Release |
: 1994 |
ISBN-10 |
: OCLC:31099938 |
ISBN-13 |
: |
Rating |
: 4/5 (38 Downloads) |
Synopsis Theoretical Analysis of Electronic Properties and Transport Phenomena in Semiconductor Nanostructures by : Dejan Jovanovic
Quantized semiconductor structures are presently under investigation for their physical properties and their potential for device applications. The theoretical modeling of these structures is particularly important for complementing fabrication technology due to the predictive capabilities of device modeling and its ability to guide the design process. This thesis investigates novel electronic and transport properties of quantized devices and develops various methods for their simulation. Both the dissipative and coherent regimes of quantum transport are considered. A three-dimensional self-consistent Schrodinger-Poisson simulation is used to investigate a single-electron tunneling structure operating under linear response conditions. The device considered contains multiple regions of quantum dimensionality which are comprehensively treated in the self-consistent solver. Coherent transport characteristics are evaluated using an interacting form of the Landauer formula. The model incorporates exchange-correlation effects and implicitly accounts for the Coulomb blockade of resonant tunneling. The theoretical transport characteristics of the structure exhibit the same general oscillatory properties as the experimental data and point to the prominence of interface disorder in establishing conductance amplitudes. Transport characteristics under dissipative conditions are evaluated using a Monte Carlo calculation tailored to quantized structures. A quantum wire serves as the model device and the influence of polar optical phonon (POP) scattering is examined for various biasing and confinement topologies. Several novel effects associated with resonant intersubband optical phonon scattering are revealed including intersubband population inversions and negative differential transconductances. Experimental observation of the latter effect has been confirmed through self-consistent determination of the electronic spectrum in the experimental device. Finally, an investigation is made of low-temperature spatial velocity oscillations due to quasi-coherent POP emission.
Author |
: Eckehard Schöll |
Publisher |
: Springer Science & Business Media |
Total Pages |
: 394 |
Release |
: 2013-11-27 |
ISBN-10 |
: 9781461558071 |
ISBN-13 |
: 1461558077 |
Rating |
: 4/5 (71 Downloads) |
Synopsis Theory of Transport Properties of Semiconductor Nanostructures by : Eckehard Schöll
Recent advances in the fabrication of semiconductors have created almost un limited possibilities to design structures on a nanometre scale with extraordinary electronic and optoelectronic properties. The theoretical understanding of elec trical transport in such nanostructures is of utmost importance for future device applications. This represents a challenging issue of today's basic research since it requires advanced theoretical techniques to cope with the quantum limit of charge transport, ultrafast carrier dynamics and strongly nonlinear high-field ef fects. This book, which appears in the electronic materials series, presents an over view of the theoretical background and recent developments in the theory of electrical transport in semiconductor nanostructures. It contains 11 chapters which are written by experts in their fields. Starting with a tutorial introduction to the subject in Chapter 1, it proceeds to present different approaches to transport theory. The semiclassical Boltzmann transport equation is in the centre of the next three chapters. Hydrodynamic moment equations (Chapter 2), Monte Carlo techniques (Chapter 3) and the cellular au tomaton approach (Chapter 4) are introduced and illustrated with applications to nanometre structures and device simulation. A full quantum-transport theory covering the Kubo formalism and nonequilibrium Green's functions (Chapter 5) as well as the density matrix theory (Chapter 6) is then presented.
Author |
: Thomas Ihn |
Publisher |
: Oxford University Press |
Total Pages |
: 569 |
Release |
: 2010 |
ISBN-10 |
: 9780199534425 |
ISBN-13 |
: 019953442X |
Rating |
: 4/5 (25 Downloads) |
Synopsis Semiconductor Nanostructures by : Thomas Ihn
This introduction to the physics of semiconductor nanostructures and their transport properties emphasizes five fundamental transport phenomena: quantized conductance, tunnelling transport, the Aharonov-Bohm effect, the quantum Hall effect and the Coulomb blockade effect.
Author |
: Dominik Szczęśniak |
Publisher |
: |
Total Pages |
: 0 |
Release |
: 2013 |
ISBN-10 |
: OCLC:867628574 |
ISBN-13 |
: |
Rating |
: 4/5 (74 Downloads) |
Synopsis Theoretical and Numerical Modelling of Electronic Transport in Nanostructures by : Dominik Szczęśniak
The aim of this thesis in the nanoelectronics domain is to present a contribution to the analysis of the quantum electronic transport phenomena in nanostructures. For this purpose, we specifically develop the phase field matching theory (PFMT). Within this algebraic approach the electronic properties of the system are described by the tight-binding formalism, whereas the analysis of the transport properties based on the phase matching of the electronic states of the leads to the states of the molecular nanojunctions. By comparing some of our results with those of the first principles methods, we have shown the correctness and fonctionality of our approach. Moreover, our method can be considered as a practical and general alternative to the Green's function-based techniques, and is applied in this work to model the electronic transport across mono and diatomic nanojunctions, consisting of mono and multivalent Na, Cu, Co, C, Si, Ga and As elements.
Author |
: Fausto Rossi |
Publisher |
: Springer Science & Business Media |
Total Pages |
: 382 |
Release |
: 2011-01-13 |
ISBN-10 |
: 9783642105562 |
ISBN-13 |
: 3642105564 |
Rating |
: 4/5 (62 Downloads) |
Synopsis Theory of Semiconductor Quantum Devices by : Fausto Rossi
Primary goal of this book is to provide a cohesive description of the vast field of semiconductor quantum devices, with special emphasis on basic quantum-mechanical phenomena governing the electro-optical response of new-generation nanomaterials. The book will cover within a common language different types of optoelectronic nanodevices, including quantum-cascade laser sources and detectors, few-electron/exciton quantum devices, and semiconductor-based quantum logic gates. The distinguishing feature of the present volume is a unified microscopic treatment of quantum-transport and coherent-optics phenomena on ultrasmall space- and time-scales, as well as of their semiclassical counterparts.
Author |
: Massimo V. Fischetti |
Publisher |
: Springer |
Total Pages |
: 481 |
Release |
: 2016-05-20 |
ISBN-10 |
: 9783319011011 |
ISBN-13 |
: 3319011014 |
Rating |
: 4/5 (11 Downloads) |
Synopsis Advanced Physics of Electron Transport in Semiconductors and Nanostructures by : Massimo V. Fischetti
This textbook is aimed at second-year graduate students in Physics, Electrical Engineering, or Materials Science. It presents a rigorous introduction to electronic transport in solids, especially at the nanometer scale.Understanding electronic transport in solids requires some basic knowledge of Hamiltonian Classical Mechanics, Quantum Mechanics, Condensed Matter Theory, and Statistical Mechanics. Hence, this book discusses those sub-topics which are required to deal with electronic transport in a single, self-contained course. This will be useful for students who intend to work in academia or the nano/ micro-electronics industry.Further topics covered include: the theory of energy bands in crystals, of second quantization and elementary excitations in solids, of the dielectric properties of semiconductors with an emphasis on dielectric screening and coupled interfacial modes, of electron scattering with phonons, plasmons, electrons and photons, of the derivation of transport equations in semiconductors and semiconductor nanostructures somewhat at the quantum level, but mainly at the semi-classical level. The text presents examples relevant to current research, thus not only about Si, but also about III-V compound semiconductors, nanowires, graphene and graphene nanoribbons. In particular, the text gives major emphasis to plane-wave methods applied to the electronic structure of solids, both DFT and empirical pseudopotentials, always paying attention to their effects on electronic transport and its numerical treatment. The core of the text is electronic transport, with ample discussions of the transport equations derived both in the quantum picture (the Liouville-von Neumann equation) and semi-classically (the Boltzmann transport equation, BTE). An advanced chapter, Chapter 18, is strictly related to the ‘tricky’ transition from the time-reversible Liouville-von Neumann equation to the time-irreversible Green’s functions, to the density-matrix formalism and, classically, to the Boltzmann transport equation. Finally, several methods for solving the BTE are also reviewed, including the method of moments, iterative methods, direct matrix inversion, Cellular Automata and Monte Carlo. Four appendices complete the text.
Author |
: Carlo Jacoboni |
Publisher |
: Springer Science & Business Media |
Total Pages |
: 590 |
Release |
: 2010-09-05 |
ISBN-10 |
: 9783642105869 |
ISBN-13 |
: 3642105866 |
Rating |
: 4/5 (69 Downloads) |
Synopsis Theory of Electron Transport in Semiconductors by : Carlo Jacoboni
This book originated out of a desire to provide students with an instrument which might lead them from knowledge of elementary classical and quantum physics to moderntheoreticaltechniques for the analysisof electrontransport in semiconductors. The book is basically a textbook for students of physics, material science, and electronics. Rather than a monograph on detailed advanced research in a speci?c area, it intends to introduce the reader to the fascinating ?eld of electron dynamics in semiconductors, a ?eld that, through its applications to electronics, greatly contributed to the transformationof all our lives in the second half of the twentieth century, and continues to provide surprises and new challenges. The ?eld is so extensive that it has been necessary to leave aside many subjects, while others could be dealt with only in terms of their basic principles. The book is divided into ?ve major parts. Part I moves from a survey of the fundamentals of classical and quantum physics to a brief review of basic semiconductor physics. Its purpose is to establish a common platform of language and symbols, and to make the entire treatment, as far as pos- ble, self-contained. Parts II and III, respectively, develop transport theory in bulk semiconductors in semiclassical and quantum frames. Part IV is devoted to semiconductor structures, including devices and mesoscopic coherent s- tems. Finally, Part V develops the basic theoretical tools of transport theory within the modern nonequilibrium Green-function formulation, starting from an introduction to second-quantization formalism.
Author |
: B M Askerov |
Publisher |
: World Scientific |
Total Pages |
: 413 |
Release |
: 1994-03-29 |
ISBN-10 |
: 9789814504553 |
ISBN-13 |
: 9814504556 |
Rating |
: 4/5 (53 Downloads) |
Synopsis Electron Transport Phenomena In Semiconductors by : B M Askerov
This book contains the first systematic and detailed exposition of the linear theory of the stationary electron transport phenomena in semiconductors. Arbitrary isotropic and anisotropic nonparabolic bands as well as p-Ge-type bands are considered. Phonon drag effect are taken account of in an arbitrary nonquantizing magnetic field. Scattering theory is discussed in detail with account taken of the Bloch wave functions effect. Transport phenomena in the quantizing magnetic field are studied as well as the size effects in thin films. Band structures of the semiconductors and semiconductor compounds of interest are also considered.The main part of the book deals with the three important problems: charge carrier statistics in a semiconductor, classical and quantum theory of the electron transport phenomena. All the theoretical results considered as well as the validity conditions are presented in the form which may be directly used to interpret experimental data.
Author |
: Paul Harrison |
Publisher |
: John Wiley & Sons |
Total Pages |
: 626 |
Release |
: 2016-06-13 |
ISBN-10 |
: 9781118923368 |
ISBN-13 |
: 1118923367 |
Rating |
: 4/5 (68 Downloads) |
Synopsis Quantum Wells, Wires and Dots by : Paul Harrison
Quantum Wells, Wires and Dots provides all the essential information, both theoretical and computational, to develop an understanding of the electronic, optical and transport properties of these semiconductor nanostructures. The book will lead the reader through comprehensive explanations and mathematical derivations to the point where they can design semiconductor nanostructures with the required electronic and optical properties for exploitation in these technologies. This fully revised and updated 4th edition features new sections that incorporate modern techniques and extensive new material including: Properties of non-parabolic energy bands Matrix solutions of the Poisson and Schrödinger equations Critical thickness of strained materials Carrier scattering by interface roughness, alloy disorder and impurities Density matrix transport modelling Thermal modelling Written by well-known authors in the field of semiconductor nanostructures and quantum optoelectronics, this user-friendly guide is presented in a lucid style with easy to follow steps, illustrative examples and questions and computational problems in each chapter to help the reader build solid foundations of understanding to a level where they can initiate their own theoretical investigations. Suitable for postgraduate students of semiconductor and condensed matter physics, the book is essential to all those researching in academic and industrial laboratories worldwide. Instructors can contact the authors directly ([email protected] / [email protected]) for Solutions to the problems.
Author |
: David K. Ferry |
Publisher |
: Cambridge University Press |
Total Pages |
: 671 |
Release |
: 2009-08-20 |
ISBN-10 |
: 9781139480833 |
ISBN-13 |
: 1139480839 |
Rating |
: 4/5 (33 Downloads) |
Synopsis Transport in Nanostructures by : David K. Ferry
The advent of semiconductor structures whose characteristic dimensions are smaller than the mean free path of carriers has led to the development of novel devices, and advances in theoretical understanding of mesoscopic systems or nanostructures. This book has been thoroughly revised and provides a much-needed update on the very latest experimental research into mesoscopic devices and develops a detailed theoretical framework for understanding their behaviour. Beginning with the key observable phenomena in nanostructures, the authors describe quantum confined systems, transmission in nanostructures, quantum dots, and single electron phenomena. Separate chapters are devoted to interference in diffusive transport, temperature decay of fluctuations, and non-equilibrium transport and nanodevices. Throughout the book, the authors interweave experimental results with the appropriate theoretical formalism. The book will be of great interest to graduate students taking courses in mesoscopic physics or nanoelectronics, and researchers working on semiconductor nanostructures.