Gathering top experts in the field, the 20th ICPS proceedings reviews the progress in all aspects of semiconductor physics. The proceedings will include state-of-the-art lectures with special emphasis on exciting new developments. It should serve as excellent material for researchers in this and related fields.

The Physics of SiO2 and Its Interfaces covers the proceedings of the International Topical Conference on the Physics of SiO2 and its Interfaces, held at the IBM Thomas J. Watson Research Center, Yorktown Heights, New York on March 22-24, 1978. The book focuses on the properties, reactions, transformations, and structures of silicon dioxide (SiO2). The selection first discusses the electronic properties of vitreous SiO2 and small polaron formation and motion of holes in a-SiO2. Discussions focus on mobility edges and polarons, deep states in the gap, and excitons. The text also ponders on field-dependent hole and exciton transport in SiO2 and electron emission from SiO2 into vacuum. The publication takes a look at the electronic structures of crystalline and amorphous SiO2; band structures and electronic properties of SiO2; and optical absorption spectrum of SiO2. The text also tackles chemical bond and related properties of SiO2; topological effects on the band structure of silica; and properties of localized SiO2 clusters in layers of disordered silicon on silver. The selection is a good reference for physicists and readers interested in the physics of silicon dioxide.

Many different chemical processes take place inside solids or at solid surfaces and interfaces. However, their quantitative description sometimes seems difficult to understand. This book by Professor Schmalzried, author of the eminently successful Solid State Reactions; bridges the gap between the 'physical' and 'chemical' approaches to this subject because it is written in a language which both sides understand. For the first time, a comprehensive coverage of the rapidly developing field of Solid State Kinetics is available. The topics covered in this book go far beyond diffusional transport. Homogeneous and heterogeneous solid-state reactions, phase transitions or the influence of external fields are also treated in detail. With this background, the author explains e.g. charge transport mechanisms in ionic conductors, principles of sensor technology, or oxidation processes clearly and comprehensibly. This book is a must for every solid-state chemist and an indispensable tool for academic and industrial readers alike. From reviews: 'a first-rate reference work that a must for any science library' (J. Am Chem. Soc.) 'can be recommended without restrictions ...' (Z. Phys. Chem.)

Ferroelectric materials have been and still are widely used in many applications, that have moved from sonar towards breakthrough technologies such as memories or optical devices. This book is a part of a four volume collection (covering material aspects, physical effects, characterization and modeling, and applications) and focuses on the characterization of ferroelectric materials, including structural, electrical and multiphysic aspects, as well as innovative techniques for modeling and predicting the performance of these devices using phenomenological approaches and nonlinear methods. Hence, the aim of this book is to provide an up-to-date review of recent scientific findings and recent advances in the field of ferroelectric system characterization and modeling, allowing a deep understanding of ferroelectricity.