Superlattice to Nanoelectronics provides a historical overview of the early work performed by Tsu and Esaki, to orient those who want to enter into this nanoscience. It describes the fundamental concepts and goes on to answer many questions about todays 'Nanoelectronics'. It covers the applications and types of devices which have been produced, many of which are still in use today. This historical perspective is important as a guide to what and how technology and new fundamental ideas are introduced and developed. The author communicates a basic understanding of the physics involved from first principles, whilst adding new depth, using simple mathematics and explanation of the background essentials. Topics covered include* Introductory materials * Superlattice, Bloch oscillations and transport * Tunneling in QWs to QDs * Optical properties: optical transitions, size dependent dielectric constant, capacitance and doping * Quantum devices: New approaches without doping and heterojunctions - quantum confinement via geometry and multipole electrodes. Issues of robustness, redundancy and I/O.Researchers, course students and research establishments should read this book, written by the leading expert in nanoelectronics and superlattices.* The Author is one of the founders of the field of superlattices* The FIRST historical overview of the field* Provides a basic understanding of the physics involved from first principles, whilst adding new depth, using simple mathematics and explanation of the background essentials

Superlattice to Nanoelectronics, Second Edition, traces the history of the development of superlattices and quantum wells from their origins in 1969. Topics discussed include the birth of the superlattice; resonant tunneling via man-made quantum well states; optical properties and Raman scattering in man-made quantum systems; dielectric function and doping of a superlattice; and quantum step and activation energy. The book also covers semiconductor atomic superlattice; Si quantum dots fabricated from annealing amorphous silicon; capacitance, dielectric constant, and doping quantum dots; porous silicon; and quantum impedance of electrons. - Written by one of the founders of this field - Delivers over 20% new material, including new research and new technological applications - Provides a basic understanding of the physics involved from first principles, while adding new depth, using basic mathematics and an explanation of the background essentials

A comprehensive textbook on nanoelectronics covering the underlying physics, nanostructures, nanomaterials and nanodevices.

This book fills a gap between many of the basic solid state physics and materials sciencebooks that are currently available. It is written for a mixed audience of electricalengineering and applied physics students who have some knowledge of elementaryundergraduate quantum mechanics and statistical mechanics. This book, based on asuccessful course taught at MIT, is divided pedagogically into three parts: (I) ElectronicStructure, (II) Transport Properties, and (III) Optical Properties. Each topic is explainedin the context of bulk materials and then extended to low-dimensional materials whereapplicable. Problem sets review the content of each chapter to help students to understandthe material described in each of the chapters more deeply and to prepare them to masterthe next chapters.

While theories based on classical physics have been very successful in helping experimentalists design microelectronic devices, new approaches based on quantum mechanics are required to accurately model nanoscale transistors and to predict their characteristics even before they are fabricated. Advanced Nanoelectronics provides research information on advanced nanoelectronics concepts, with a focus on modeling and simulation. Featuring contributions by researchers actively engaged in nanoelectronics research, it develops and applies analytical formulations to investigate nanoscale devices. The book begins by introducing the basic ideas related to quantum theory that are needed to better understand nanoscale structures found in nanoelectronics, including graphenes, carbon nanotubes, and quantum wells, dots, and wires. It goes on to highlight some of the key concepts required to understand nanotransistors. These concepts are then applied to the carbon nanotube field effect transistor (CNTFET). Several chapters cover graphene, an unzipped form of CNT that is the recently discovered allotrope of carbon that has gained a tremendous amount of scientific and technological interest. The book discusses the development of the graphene nanoribbon field effect transistor (GNRFET) and its use as a possible replacement to overcome the CNT chirality challenge. It also examines silicon nanowire (SiNW) as a new candidate for achieving the downscaling of devices. The text describes the modeling and fabrication of SiNW, including a new top-down fabrication technique. Strained technology, which changes the properties of device materials rather than changing the device geometry, is also discussed. The book ends with a look at the technical and economic challenges that face the commercialization of nanoelectronics and what universities, industries, and government can do to lower the barriers. A useful resource for professionals, researchers, and scientists, this work brings together state-of-the-art technical and scientific information on important topics in advanced nanoelectronics.

This thesis focuses on the electrochemical synthesis of multi-segmented nanowires. In contrast to previous work, which was largely limited to one-dimensional modifications, Tuncay Ozel presents a technique, termed coaxial Lithography (COAL), which allows for the synthesis of coaxial nanowires in a parallel fashion with sub-10 nanometer resolution in both the axial and radial dimensions. This work has significantly expanded current synthetic capabilities with respect to materials generality and the ability to tailor two-dimensional growth in the formation of core-shell structures. These developments have enabled fundamental and applied studies which were not previously possible. The COAL technique will increase the capabilities of many researchers who are interested in studying light-matter interactions, nanoparticle assembly, solution-dispersible nanoparticles and labels, semiconductor device physics and nanowire biomimetic probe preparation. The methodology and results presented in this thesis appeal to researchers in nanomaterial synthesis, plasmonics, biology, photovoltaics, and photocatalysis.

This book presents the first comprehensive treatment of discrete phase-space quantum mechanics and the lattice Weyl-Wigner formulation of energy band dynamics, by the originator of these theoretical techniques. The author's quantum superfield theoretical formulation of nonequilibrium quantum physics is given in real time, without the awkward use of artificial time contour employed in previous formulations. These two main quantum theoretical techniques combine to yield general (including quasiparticle-pairing dynamics) and exact quantum transport equations in phase-space, appropriate for nanodevices. The derivation of transport formulas in mesoscopic physics from the general quantum transport equations is also treated. Pioneering nanodevices are discussed in the light of the quantum-transport physics equations, and an in-depth treatment of the physics of resonant tunneling devices is given. Operator Hilbert-space methods and quantum tomography are discussed. Discrete phase-space quantum mechanics on finite fields is treated for completeness and by virtue of its relevance to quantum computing. The phenomenological treatment of evolution superoperator and measurements is given to help clarify the general quantum transport theory. Quantum computing and information theory is covered to demonstrate the foundational aspects of discrete quantum dynamics, particularly in deriving a complete set of multiparticle entangled basis states.

The author presents all aspects, in theory and experiments, of nanoelectronic devices starting from field-effect transistors and leading to alternative device concepts such as Schottky-barrier MOSFETs and band-to-band tunnel FETs. Latest advances in Nanoelectronics, as ultralow power nanoscale devices and the realization of silicon MOS spin qubits, are discussed and finally a brief introduction into device simulations is given as well.

This book presents the most relevant and recent results in the study of “Nanoelectromagnetics”, a recently born fascinating research discipline, whose popularity is fast arising with the intensive penetration of nanotechnology in the world of electronics applications. Studying nanoelectromagnetics means describing the interaction between electromagnetic radiation and quantum mechanical low-dimensional systems: this requires a full interdisciplinary approach, the reason why this book hosts contributions from the fields of fundamental and applied electromagnetics, of chemistry and technology of nanostructures and nanocomposites, of physics of nano-structures systems, etc. The book is aimed at providing the reader with the state of the art in Nanoelectromagnetics, from theoretical modelling to experimental characterization, from design to synthesis, from DC to microwave and terahertz applications, from the study of fundamental material properties to the analysis of complex systems and devices, from commercial thin-film coatings to metamaterials to circuit components and nanodevices. The book is intended as a reference in advanced courses for graduate students and as a guide for researchers and industrial professionals involved in nanoelectronics and nanophotonics applications.