Section 1 addresses the most recent developments in processes at the semiconductor-solution interface include etching, oxidation, passivation, film growth, porous semiconductor formation, electrochemical, photoelectrochemical, electroluminescence and photoluminescence processes, electroanalytical measurements and related topics on both elemental and compound semiconductors. Section 2 addresses the most recent developments in compound semiconductors encompassing advanced devices, materials growth, characterization, processing, device fabrication, reliability, and related topics.

This issue of ECS Transactions contain the most recent developments in compound semiconductors encompassing advanced devices, materials growth, characterization, processing, device fabrication, reliability, and other related topics, as well as the most recent developments in processes at the semiconductor/solution interface including etching, oxidation, passivation, film growth, electrochemical and photoelectrochemical processes, electroluminescence, photoluminescence, and other related topics.

This collection of selected review papers focuses on topics such as digital radiation sensors and nanosensory systems for nanotechnology applications and integrated X-ray/PET/CT detectors; nanophosphors and nanocrystal quantum dots as X-ray radiation sensors; the luminescence efficiency of CdSe/ZnS QD and UV-induced luminescence efficiency distribution; investigations devoted to the quantum and multi-parametrical nature of disasters and the modeling thereof using quantum search and quantum query algorithms; sum-frequency-generation, IR fourier and raman spectroscopy methods; as well as investigations into the vibrational modes of viruses and other pathogenic microorganisms aimed at creating optical biosensory systems. This is followed by a review of radiation resistant semiconductor sensors and magnetic measurement instrumentation for magnetic diagnostics of high-tech fission and fusion set-ups and accelerators; the evaluation of the use of neutron-radiation, 10B-enriched semiconducting materials as thin-film, highly reliable, highly sensitive and fast-acting robust solid-state electronic neutron-detectors; and the irradiation of n-Si crystals with protons, which converts the “metallic” inclusions to “dielectric” ones in isochronous annealing, therefore leading to opto/micro/nanoelectronic devices, including nuclear radiation nanosensors. The book concludes with a comparative study of the nitride and sulfide chemisorbed layers; a chemical model that describes the formation of such layers in hydrazine-sulfide and water sodium sulfide solution; and recent developments in the microwave-enhanced processing and microwave-assisted synthesis of nanoparticles and nanomaterials using Mn(OH)2.

Porous Semiconductors: Optical Properties and Applications provides an examination of porous semiconductor materials. Beginning with a description of the basic electrochemistry of porous semiconductors and the different kinds of porous semiconductor materials that can be fabricated, the book moves on to describe the fabrication processes used in the production of porous semiconductor optical components. Concluding the text, a number of optical components based on porous semiconductor materials are discussed in depth. Porous Semiconductors: Optical Properties and Applications provides a thorough grounding in the design, fabrication and theory behind the optical applications of porous semiconductor materials for graduate and undergraduate students interested in optics, photonics, MEMS, and material science. The book is also a valuable reference for scientists, researchers, and engineers in the field of optics and materials science.

Plasma processing of semiconductors is an interdisciplinary field requiring knowledge of both plasma physics and chemical engineering. The two authors are experts in each of these fields, and their collaboration results in the merging of these fields with a common terminology. Basic plasma concepts are introduced painlessly to those who have studied undergraduate electromagnetics but have had no previous exposure to plasmas. Unnecessarily detailed derivations are omitted; yet the reader is led to understand in some depth those concepts, such as the structure of sheaths, that are important in the design and operation of plasma processing reactors. Physicists not accustomed to low-temperature plasmas are introduced to chemical kinetics, surface science, and molecular spectroscopy. The material has been condensed to suit a nine-week graduate course, but it is sufficient to bring the reader up to date on current problems such as copper interconnects, low-k and high-k dielectrics, and oxide damage. Students will appreciate the web-style layout with ample color illustrations opposite the text, with ample room for notes. This short book is ideal for new workers in the semiconductor industry who want to be brought up to speed with minimum effort. It is also suitable for Chemical Engineering students studying plasma processing of materials; Engineers, physicists, and technicians entering the semiconductor industry who want a quick overview of the use of plasmas in the industry.

This issue contains the proceedings of both invited and contributed talks at the 47th State-Of-The-Art Programs on Compound Semiconductors (SOTAPOCS) symposium, and of the 8th Symposium on Wide Bandgap Semiconductors and Devices. The topics in this issue include some of the latest progress in compound and wide bandgap semiconductor development in fabrication processes, materials, characterization, devices, and reliability.

Considering the properties of inorganic and organic ions pertaining directly, as well as indirectly, to their behaviour in solutions, this work aims to enable the specialist and non-specialist alike to comprehend ion behaviour in ongoing and developing studies and applications. The companion disk is for use with Microsoft Access 2.0.