Single-electron tunneling (SET) and related phenomena have recently come to be considered as "hot topics". This also became apparent when we organized the 4th International Conference on Superconducting and Quantum Effect Devices and Their Applications, SQUID'91, which was held June 18-21, 1991, in Berlin, Germany. Impressed by the number of contributions dedicated to the new physics of ultrasmall devices, we deemed it appropriate to devote this volume of the Springer Series in Electronics and Photonics to these specialized proceedings. The other contributions presented at SQUID'91, which are more conventional in character but nevertheless contain excitingly innovative results, are published separately as Volume 64 of the series Springer Proceedings in Physics. At first glance it seems strange that a conference abbreviated SQUID'91 should attract so many papers on non-superconducting devices, and in fact the first SQUID'XX conferences dealt exclusively with the physics and technology of Josephson junctions, SQUIDs and other superconducting devices and their ap plications. However, many concepts developed for superconducting devices, like tunneling, flux quantization, and flux-charge conjugation, appeared to be suitable for ultrasmall non-superconducting structures as well, and many researchers in the field of superconducting devices extended their activities accordingly. Thus the extension of the conference programme evolved quite informally. Meanwhile, the meetings established themselves as well-known conference series tradition ally appreciated by the SQUID community for its balanced mixture of physics and technology, review and preview. SQUID'XX became a kind of a trademark.

Semiconductor technology has developed considerably during the past several decades. The exponential growth in microelectronic processing power has been achieved by a constant scaling down of integrated cir,cuits. Smaller fea ture sizes result in increased functional density, faster speed, and lower costs. One key ingredient of the LSI technology is the development of the lithog raphy and microfabrication. The current minimum feature size is already as small as 0.2 /tm, beyond the limit imposed by the wavelength of visible light and rapidly approaching fundamental limits. The next generation of devices is highly likely to show unexpected properties due to quantum effects and fluctuations. The device which plays an important role in LSIs is MOSFETs (metal oxide-semiconductor field-effect transistors). In MOSFETs an inversion layer is formed at the interface of silicon and its insulating oxide. The inversion layer provides a unique two-dimensional (2D) system in which the electron concentration is controlled almost freely over a very wide range. Physics of such 2D systems was born in the mid-1960s together with the development of MOSFETs. The integer quantum Hall effect was first discovered in this system.

Quantum mechanical laws are well documented at the level of a single or a few atoms and are here extended to systems containing 102 to 1010 electrons - still much smaller than the usual macroscopic objects, but behaving in a manner similar to a single atom. Besides the purely theoretical interest, such systems pose a challenge to the achievement of the ultimate microelectronic applications. The present volume presents an up-to-date account of the physics, technology and expected applications of quantum effects in solid-state mesoscopic structures. Physical phenomena include the Aharonov-Bohm effect, persistent currents, Coulomb blockade and Coulomb oscillations in single electron devices, Andreev reflections and the Josephson effect in superconductor/normal/superconductor systems, shot noise suppression in microcontacts and contact resistance quantisation, and overall quantum coherence in mesoscopic and nanoscopic structures related to the emerging physics of quantum computation in the solid-state environment.

This volume includes highlights of the theories and experimental findings that underlie essential phenomena occurring in quantum-based devices and systems as well as the principles of operation of selected novel quantum-based electronic devices and systems. A number of the emerging approaches to creating new types of quantum-based electronic devices and systems are also discussed.

This volume includes highlights of the theories and experimental findings that underlie essential phenomena occurring in quantum-based devices and systems as well as the principles of operation of selected novel quantum-based electronic devices and systems. A number of the emerging approaches to creating new types of quantum-based electronic devices and systems are also discussed.

SNED Proceedings (Naples, Italy, May 28-June 1, 2001)

From the reviews: "This is a well written book offering a clear and detailed insight into physical processes and numerical procedures essential to the single-electron dynamics in electro-conducting media." Zentralblatt für Mathematik und ihre Grenzgebiete

Future high-tech applications such as nanotechnology require a deep understanding of the physics of mesoscopic systems. These systems form a bridge between macroscopic systems governed by classical physics and microscopic systems governed by quantum physics. This introduction discusses a variety of typical surface, optical, transport, and magnetic properties of mesoscopic systems with reference to many experimental observations. It is written for physicists, materials scientists and engineers who want to stay abreast of current research or high-tech development.

This book provides a review of research on single-electron devices and circuits in silicon. It considers the design, fabrication, and characterization of single-electron transistors, single-electron memory devices, few-electron transfer devices such as electron pumps and turnstiles, and single-electron logic devices. In all cases, a review of various device designs is provided, and in many cases, the devices developed during the author's own research work are used as detailed examples. An introduction to the physics of the single-electron charging effects is also provided.