Silicon Carbide Biotechnology: A Biocompatible Semiconductor for Advanced Biomedical Devices and Applications, Second Edition, provides the latest information on this wide-band-gap semiconductor material that the body does not reject as a foreign (i.e., not organic) material and its potential to further advance biomedical applications. SiC devices offer high power densities and low energy losses, enabling lighter, more compact, and higher efficiency products for biocompatible and long-term in vivo applications, including heart stent coatings, bone implant scaffolds, neurological implants and sensors, glucose sensors, brain-machine-interface devices, smart bone implants, and organ implants. This book provides the materials and biomedical engineering communities with a seminal reference book on SiC for developing technology, and is a resource for practitioners eager to identify and implement advanced engineering solutions to their everyday medical problems for which they currently lack long-term, cost-effective solutions. - Discusses the properties, processing, characterization, and application of silicon carbide biomedical materials and related technology - Assesses literature, patents, and FDA approvals for clinical trials, enabling rapid assimilation of data from current disparate sources and promoting the transition from technology R&D, to clinical trials - Includes more on applications and devices, such as SiC nanowires, biofunctionalized devices, micro-electrode arrays, heart stent/cardiovascular coatings, and continuous glucose sensors, in this new edition

Silicon Carbide (SiC) is a wide-band-gap semiconductor biocompatible material that has the potential to advance advanced biomedical applications. SiC devices offer higher power densities and lower energy losses, enabling lighter, more compact and higher efficiency products for biocompatible and long-term in vivo applications ranging from heart stent coatings and bone implant scaffolds to neurological implants and sensors. The main problem facing the medical community today is the lack of biocompatible materials that are also capable of electronic operation. Such devices are currently implemented using silicon technology, which either has to be hermetically sealed so it cannot interact with the body or the material is only stable in vivo for short periods of time. For long term use (permanent implanted devices such as glucose sensors, brain-machine-interface devices, smart bone and organ implants) a more robust material that the body does not recognize and reject as a foreign (i.e., not organic) material is needed. Silicon Carbide has been proven to be just such a material and will open up a whole new host of fields by allowing the development of advanced biomedical devices never before possible for long-term use in vivo. This book not only provides the materials and biomedical engineering communities with a seminal reference book on SiC that they can use to further develop the technology, it also provides a technology resource for medical doctors and practitioners who are hungry to identify and implement advanced engineering solutions to their everyday medical problems that currently lack long term, cost effective solutions. - Discusses Silicon Carbide biomedical materials and technology in terms of their properties, processing, characterization, and application, in one book, from leading professionals and scientists - Critical assesses existing literature, patents and FDA approvals for clinical trials, enabling the rapid assimilation of important data from the current disparate sources and promoting the transition from technology research and development to clinical trials - Explores long-term use and applications in vivo in devices and applications with advanced sensing and semiconducting properties, pointing to new product devekipment particularly within brain trauma, bone implants, sub-cutaneous sensors and advanced kidney dialysis devices

Silicon Carbide (SiC) is a wide-band-gap semiconductor biocompatible material that has the potential to advance advanced biomedical applications. SiC devices offer higher power densities and lower energy losses, enabling lighter, more compact and higher efficiency products for biocompatible and long-term in vivo applications ranging from heart stent coatings and bone implant scaffolds to neurological implants and sensors. The main problem facing the medical community today is the lack of biocompatible materials that are also capable of electronic operation. Such devices are currently implemented using silicon technology, which either has to be hermetically sealed so it cannot interact with the body or the material is only stable in vivo for short periods of time. For long term use (permanent implanted devices such as glucose sensors, brain-machine-interface devices, smart bone and organ implants) a more robust material that the body does not recognize and reject as a foreign (i.e., not organic) material is needed. Silicon Carbide has been proven to be just such a material and will open up a whole new host of fields by allowing the development of advanced biomedical devices never before possible for long-term use in vivo. This book not only provides the materials and biomedical engineering communities with a seminal reference book on SiC that they can use to further develop the technology, it also provides a technology resource for medical doctors and practitioners who are hungry to identify and implement advanced engineering solutions to their everyday medical problems that currently lack long term, cost effective solutions. Discusses Silicon Carbide biomedical materials and technology in terms of their properties, processing, characterization, and application, in one book, from leading professionals and scientists Critical assesses existing literature, patents and FDA approvals for clinical trials, enabling the rapid assimilation of important data from the current disparate sources and promoting the transition from technology research and development to clinical trials Explores long-term use and applications in vivo in devices and applications with advanced sensing and semiconducting properties, pointing to new product devekipment particularly within brain trauma, bone implants, sub-cutaneous sensors and advanced kidney dialysis devices

After over two decades of focused research and development, silicon carbide (SiC) is now ready for use in the healthcare sector and Silicon Carbide Technology for Advanced Human Healthcare Applications provides an up-to-date assessment of SiC devices for long-term human use. It explores a plethora of applications that SiC is uniquely positioned for in human healthcare, beginning with the three primary areas of technology which are closest to human trials and thus adoption in the healthcare industry: neural implants and spinal cord repair, graphene and biosensors, and finally deep tissue cancer therapy using SiC nanotechnology. Biomedical-inspired engineers, scientists, and healthcare professionals will find this book to be very useful in two ways: (I) as a guide to new ways to design and develop advanced medical devices and (II) as a reference for new developments in the field. The book's intent is to stimulate ideas for further technological enhancements and breakthroughs, which will provide alternative solutions for human healthcare applications. - Discusses the utilization of SiC materials for biomedical applications - Provides a logical pathway to understand why SiC is ideal for several critical applications, in particular for long-term implantable devices, and will serve as a guide to new ways to design and develop advanced medical devices - Serves as a reference for new developments in the field and as a technology resource for medical doctors and practitioners looking to identify and implement advanced engineering solutions to everyday medical challenges that currently lack long-term, cost-effective solutions

This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon. The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development.

This book brings together the most up-to-date information on the fabrication techniques, properties, and potential applications of low dimensional silicon carbide (SiC) nanostructures such as nanocrystallites, nanowires, nanotubes, and nanostructured films. It also summarizes the tremendous achievements acquired during the past three decades involving structural, electronic, and optical properties of bulk silicon carbide crystals. SiC nanostructures exhibit a range of fascinating and industrially important properties, such as diverse polytypes, stability of interband and defect-related green to blue luminescence, inertness to chemical surroundings, and good biocompatibility. These properties have generated an increasing interest in the materials, which have great potential in a variety of applications across the fields of nanoelectronics, optoelectronics, electron field emission, sensing, quantum information, energy conversion and storage, biomedical engineering, and medicine. SiC is also a most promising substitute for silicon in high power, high temperature, and high frequency microelectronic devices. Recent breakthrough pertaining to the synthesis of ultra-high quality SiC single-crystals will bring the materials closer to real applications. Silicon Carbide Nanostructures: Fabrication, Structure, and Properties provides a unique reference book for researchers and graduate students in this emerging field. It is intended for materials scientists, physicists, chemists, and engineers in microelectronics, optoelectronics, and biomedical engineering.

Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins with an overview of porous wide-band-gap technology, and describes the underlying scientific basis for each application area. Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more

Silicon Carbide Microsystems for Harsh Environments reviews state-of-the-art Silicon Carbide (SiC) technologies that, when combined, create microsystems capable of surviving in harsh environments, technological readiness of the system components, key issues when integrating these components into systems, and other hurdles in harsh environment operation. The authors use the SiC technology platform suite the model platform for developing harsh environment microsystems and then detail the current status of the specific individual technologies (electronics, MEMS, packaging). Additionally, methods towards system level integration of components and key challenges are evaluated and discussed based on the current state of SiC materials processing and device technology. Issues such as temperature mismatch, process compatibility and temperature stability of individual components and how these issues manifest when building the system receive thorough investigation. The material covered not only reviews the state-of-the-art MEMS devices, provides a framework for the joining of electronics and MEMS along with packaging into usable harsh-environment-ready sensor modules.

Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.