Silicon Carbide A High Temperature Semiconductor
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Author |
: Joseph R. O'Connor |
Publisher |
: |
Total Pages |
: 552 |
Release |
: 1960 |
ISBN-10 |
: STANFORD:36105030371657 |
ISBN-13 |
: |
Rating |
: 4/5 (57 Downloads) |
Synopsis Silicon Carbide, a High Temperature Semiconductor by : Joseph R. O'Connor
Author |
: Committee on Materials for High-Temperature Semiconductor Devices |
Publisher |
: National Academies Press |
Total Pages |
: 136 |
Release |
: 1995-09-28 |
ISBN-10 |
: 9780309596534 |
ISBN-13 |
: 030959653X |
Rating |
: 4/5 (34 Downloads) |
Synopsis Materials for High-Temperature Semiconductor Devices by : Committee on Materials for High-Temperature Semiconductor Devices
Major benefits to system architecture would result if cooling systems for components could be eliminated without compromising performance. This book surveys the state-of-the-art for the three major wide bandgap materials (silicon carbide, nitrides, and diamond), assesses the national and international efforts to develop these materials, identifies the technical barriers to their development and manufacture, determines the criteria for successfully packaging and integrating these devices into existing systems, and recommends future research priorities.
Author |
: Conference on Silicon Carbide, Boston, 1959 |
Publisher |
: |
Total Pages |
: 0 |
Release |
: |
ISBN-10 |
: OCLC:1441705357 |
ISBN-13 |
: |
Rating |
: 4/5 (57 Downloads) |
Synopsis Silicon carbide, a high temperature semiconductor: proceedings of the conference... by : Conference on Silicon Carbide, Boston, 1959
Author |
: Gus J. Caras |
Publisher |
: |
Total Pages |
: 212 |
Release |
: 1965 |
ISBN-10 |
: UOM:39015095040583 |
ISBN-13 |
: |
Rating |
: 4/5 (83 Downloads) |
Synopsis Silicon Carbide for Semiconductors by : Gus J. Caras
Author |
: J. R. O'Connor |
Publisher |
: |
Total Pages |
: |
Release |
: 1960 |
ISBN-10 |
: OCLC:847034141 |
ISBN-13 |
: |
Rating |
: 4/5 (41 Downloads) |
Synopsis Silicon Carbide, a High Temperature Semiconductor by : J. R. O'Connor
Author |
: Conference on Silicon Carbide (BOSTON, Massachusetts) |
Publisher |
: |
Total Pages |
: 521 |
Release |
: 1960 |
ISBN-10 |
: OCLC:558004358 |
ISBN-13 |
: |
Rating |
: 4/5 (58 Downloads) |
Synopsis Silicon Carbide: a High Temperature Semiconductor. Proceedings of the Conference on Silicon Carbide ... April 2-3, 1959. Edited by J.R. O'Connor and J. Smiltens, Etc by : Conference on Silicon Carbide (BOSTON, Massachusetts)
Author |
: Stephen E. Saddow |
Publisher |
: Artech House |
Total Pages |
: 236 |
Release |
: 2004 |
ISBN-10 |
: 1580537413 |
ISBN-13 |
: 9781580537414 |
Rating |
: 4/5 (13 Downloads) |
Synopsis Advances in Silicon Carbide Processing and Applications by : Stephen E. Saddow
Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices. Key issues in selective doping of SiC via ion implantation are covered with special focus on implant conditions and electrical activation of implants. SiC applications discussed include chemical sensors, motor-control components, high-temperature gas sensors, and high-temperature electronics. By cutting through the arcane data and jargon surrounding the hype on SiC, this book gives an honest assessment of today's SiC technology and shows you how SiC can be adopted in developing tomorrow's applications.
Author |
: Sergey Rumyantsev |
Publisher |
: World Scientific |
Total Pages |
: 342 |
Release |
: 2006-07-25 |
ISBN-10 |
: 9789814477772 |
ISBN-13 |
: 981447777X |
Rating |
: 4/5 (72 Downloads) |
Synopsis Sic Materials And Devices - Volume 1 by : Sergey Rumyantsev
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
Author |
: J. R. O'Connor |
Publisher |
: |
Total Pages |
: 521 |
Release |
: 1960 |
ISBN-10 |
: OCLC:1131137963 |
ISBN-13 |
: |
Rating |
: 4/5 (63 Downloads) |
Synopsis Silicon carbide a high temperature semiconductor : proceedings by : J. R. O'Connor
Author |
: Joseph R. O'Connor |
Publisher |
: |
Total Pages |
: 521 |
Release |
: 1960 |
ISBN-10 |
: OCLC:917020821 |
ISBN-13 |
: |
Rating |
: 4/5 (21 Downloads) |
Synopsis Silicon carbide by : Joseph R. O'Connor