The subject area of electronic devices has undergone a rapid expansion in recent years. New developments are continually accurring all over the world. Progress in the field of electronic devices is, however, dependent upon the production and characterization of device grade material. The science and technology of electronic materials has attracted somewhat less attention, as compared with device development.

Proceedings of the 3rd International Conference and Intensive Tutorial Course on Semiconductor Materials and Technology (ICSMT 96), New Delhi, India, December 1996

The subject area of electronic devices has undergone a rapid expansion in recent years. New developments are continually accurring all over the world. Progress in the field of electronic devices is, however, dependent upon the production and characterization of device grade material. The science and technology of electronic materials has attracted somewhat less attention, as compared with device development. The present work closes this gap by concentrating on the materials science aspects of semiconductor technology. The main focus has been directed at low dimensional semiconductor structures, but the latest developments in the overall field of semiconductor materials have also been covered with regard to various topics, such as quantum wells, superlattices and nanostructures, materials for optical memories, sensors, laser induced crystallization and II-VI, III-V and IV-VI semiconductors.

High electron mobility transistor (HEMT) has better performance potential than the conventional MOSFETs. Further, InAs is a perfect candidate for the HEMT device architecture owing to its peak electron mobility. Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. This book explains different types of device architectures available to enhance performance including InAs-based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs-based SG and DG-HEMT is also discussed. The main goal of this book is to characterize the InAs device to achieve terahertz frequency regime with proper device parameters. Features: Explains the influence of InAs material in the performance of HEMTs and MOS-HEMTs. Covers novel indium arsenide architectures for achieving terahertz frequencies Discusses impact of device parameters on frequency response Illustrates noise characterization of optimized indium arsenide HEMTs Introduces terahertz electronics including sources for terahertz applications. This book is of special interest to researchers and graduate students in Electronics Engineering, High Electron Mobility Transistors, Semi-conductors, Communications, and Nanodevices.

Yearbook of International Organizations is the most comprehensive reference resource and provides current details of international non-governmental (NGO) and intergovernmental organizations (IGO). Collected, documented and disseminated by the Union of International Associations (UIA), detailed and profound information on international organizations worldwide can be found here, from the United Nations, the ASEAN and the Red Cross to sporting bodies and religious orders. Besides historical and organizational information (e.g. on aims, subject orientation and locations), details on activities, events or publications as well as the most current contact details are included. Integrated are also biographies of the leading individuals of the organizations as well as the presentation of networks of organizations. The Union of International Associations (UIA) is a non-profit, apolitical, independent and non-governmental institution in the service for international associations, based in Brussels, Belgium. For 100 years, the UIA has focused on the nature and evolution of the international civil society - a topic of increasing relevance. New: UIA Bi-monthly Study Find out about current topics and the wealth of information contained in the Yearbook of International Organizations. No. 1 of UIA's new Bi-monthly Study is now available for download. This time's subject: Olympic Games and Sports.

The sol-gel method is a powerful route of synthesis used worldwide. It produces bulk, nano- and mesostructured sol-gel materials, which can encapsulate metallic and magnetic nanoparticles, non-linear azochromophores, perovskites, organic dyes, biological molecules, etc.. This can have interesting applications for catalysis, photocatalysis; drug delivery for treatment of neurodegenerative diseases such as cancer, Parkinson's and Azheimer's. In this book, valuable contributions related to novel materials synthesized by the sol-gel route are provided. The effect of the sol-gel method to synthesize these materials with potential properties is described, and how the variation of the parameters during the synthesis influences their design and allows to adjust their properties according to the desired application is discussed.