Resistive Random Access Memory (ReRAM) has attracted significant attention recently, as it is now considered as the promising candidate for the next generation of non-volatile memory device, due to its high density, low operating power, fast switching speed, and compatibility with conventional CMOS process. Among many resistance switching materials, TiO2 has been widely studied. However, the most challenging issue is that the underlying switching mechanism is lacking in-depth understanding. It has been proposed that the resistance switching is strongly coupled with the presence and a preferential distribution of oxygen vacancies involving the formation of a conductive filament. Although many experiments have been done to address the switching mechanism during the last decade, it is hard to figure out what happens at microscopic level. Therefore, systematic interpretation about the microscopic details of the role of oxygen vacancies in the formation of a conductive filament is essential. To address the conduction and the resistance switching mechanism, the effect of oxygen vacancies on the electronic structures in TiO2 has been investigated using first principles calculations based on density functional theory. In this dissertation, we report "ON"-state (Low Resistance State) conduction mechanism of rutile TiO2 including oxygen vacancies, and then the transition from "ON" to "OFF"-state (High Resistance State) is investigated. Although it is known that TiO2 exhibits n-type semiconducting property with extra electrons generated by the formation of oxygen vacancies, "ON" and "OFF"-state conductivity during resistance switching cannot be explained by isolated single oxygen vacancy. We calculated electronic characteristics such as density of states, electron localization function, band decomposed charge density distribution, and energy band structure, and show the influence of oxygen vacancy configurations on these properties and on the resistance change. Oxygen vacancy ordering and diffusion of either oxygen vacancy or hydrogen impurities have a significant impact on both the formation of the conductive filament and the transition from "ON" to "OFF"-state. Results from this study indicate that the "ON"-state conduction and resistance switching model that can be ascribed to the formation and rupture of conductive filament consisting of oxygen vacancy-ordered structure.

With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.

Scientific interest in TiO2-based materials has exponentially grown in the last few decades. Titanium Dioxide (TiO2) and Its Applications introduces the main physicochemical properties of TiO2 which are the basis of its applications in various fields. While the basic principles of the TiO2 properties have been the subject of various previous publications, this book is mainly devoted to TiO2 applications. The book includes contributions written by experts from a wide range of disciplines in order to address titanium dioxide's utilization in energy, consumer, materials, devices, and catalytic applications. The various applications identified include: photocatalysis, catalysis, optics, electronics, energy storage and production, ceramics, pigments, cosmetics, sensors, and heat transfer. Titanium Dioxide (TiO2) and Its Applications is suitable for a wide readership in the disciplines of materials science, chemistry, and engineering in both academia and industry. - Includes a wide range of current and emerging applications of titanium dioxide in the fields of energy, consumer applications, materials, and devices - Provides a brief overview of titanium dioxide and its properties, as well as techniques to design, deposit, and study the material - Discusses the relevant properties, preparation methods, and other apposite considerations in each application-focused chapter

Nowadays, scientific research deals with alternative solutions for creating non-traditional computing systems, such as neural network architectures where the stochastic nature and live dynamics of memristive models play a key role. The features of memristors make it possible to direct processing and analysis of both biosystems and systems driven by artificial intelligence, as well as develop plausible physical models of spiking neural networks with self-organization. This book deals with advanced applications illustrating these concepts, and delivers an important contribution for the achievement of the next generation of intelligent hybrid biostructures. Different modeling and simulation tools can deliver an alternative to funding the theoretical approach as well as practical implementation of memristive systems.

Nanoscale Applications for Information and Energy Systems presents nanotechnology fundamentals and applications in the key research areas of information technology (electronics and photonics) and alternative (solar) energy: plasmonics, photovoltaics, transparent conducting electrodes, silicon electroplating, and resistive switching. The three major technology areas – electronics, photonics, and solar energy – are linked on the basis of similar applications of nanostructured materials in research and development. By bridging the materials physics and chemistry at the atomic scale with device and system design, integration, and performance requirements, tutorial chapters from worldwide leaders in the field provide a coherent picture of theoretical and experimental research efforts and technology development in these highly interdisciplinary areas.

Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled. The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory. Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation. The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.

Metal Oxides for Non-volatile Memory: Materials, Technology and Applications covers the technology and applications of metal oxides (MOx) in non-volatile memory (NVM) technology. The book addresses all types of NVMs, including floating-gate memories, 3-D memories, charge-trapping memories, quantum-dot memories, resistance switching memories and memristors, Mott memories and transparent memories. Applications of MOx in DRAM technology where they play a crucial role to the DRAM evolution are also addressed. The book offers a broad scope, encompassing discussions of materials properties, deposition methods, design and fabrication, and circuit and system level applications of metal oxides to non-volatile memory. Finally, the book addresses one of the most promising materials that may lead to a solution to the challenges in chip size and capacity for memory technologies, particular for mobile applications and embedded systems. - Systematically covers metal oxides materials and their properties with memory technology applications, including floating-gate memory, 3-D memory, memristors, and much more - Provides an overview on the most relevant deposition methods, including sputtering, CVD, ALD and MBE - Discusses the design and fabrication of metal oxides for wide breadth of non-volatile memory applications from 3-D flash technology, transparent memory and DRAM technology

This book provides readers with a single-source guide to fabricate, characterize and model memristor devices for sensing applications. The authors describe a correlated, physics-based model to simulate and predict the behavior of devices fabricated with different oxide materials, active layer thickness, and operating temperature. They discuss memristors from various perspectives, including working mechanisms, different synthesis methods, characterization procedures, and device employment in radiation sensing and security applications.