Optical properties, particularly in the infrared range of wavelengths, continue to be of enormous interest to both material scientists and device engineers. The need for the development of standards for data of optical properties in the infrared range of wavelengths is very timely considering the on-going transition of nano-technology from fundamental R&D to manufacturing. Radiative properties play a critical role in the processing, process control and manufacturing of semiconductor materials, devices, circuits and systems. The design and implementation of real-time process control methods in manufacturing requires the knowledge of the radiative properties of materials. Sensors and imagers operate on the basis of the radiative properties of materials. This book reviews the optical properties of various semiconductors in the infrared range of wavelengths. Theoretical and experimental studies of the radiative properties of semiconductors are presented. Previous studies, potential applications and future developments are outlined. In Chapter 1, an introduction to the radiative properties is presented. Examples of instrumentation for measurements of the radiative properties is described in Chapter 2. In Chapters 3-11, case studies of the radiative properties of several semiconductors are elucidated. The modeling and applications of these properties are explained in Chapters 12 and 13, respectively. In Chapter 14, examples of the global infrastructure for these measurements are illustrated.

Optical properties, particularly in the infrared range of wavelengths, continue to be of enormous interest to both material scientists and device engineers. The need for the development of standards for data of optical properties in the infrared range of wavelengths is very timely considering the on-going transition of nano-technology from fundamental R&D to manufacturing. Radiative properties play a critical role in the processing, process control and manufacturing of semiconductor materials, devices, circuits and systems. The design and implementation of real-time process control methods in manufacturing requires the knowledge of the radiative properties of materials. Sensors and imagers operate on the basis of the radiative properties of materials. This book reviews the optical properties of various semiconductors in the infrared range of wavelengths. Theoretical and experimental studies of the radiative properties of semiconductors are presented. Previous studies, potential applications and future developments are outlined. In Chapter 1, an introduction to the radiative properties is presented. Examples of instrumentation for measurements of the radiative properties is described in Chapter 2. In Chapters 3-11, case studies of the radiative properties of several semiconductors are elucidated. The modeling and applications of these properties are explained in Chapters 12 and 13, respectively. In Chapter 14, examples of the global infrastructure for these measurements are illustrated.

The effects of electromagnetic radiation and high-energy par ticles on semiconductors can be divided into two main processes: (a) the excitation of electrons (the special case is internal ioniza tion, i. e. , the generation of excess charge carriers); and(b) dis turbance of the periodic structure of the crystal, i. e. , the forma tion of "structural radiation defects. " Naturally, investigations of the effects of radiation on semiconductors cannot be considered in isolation. Thus, for example, the problern of "radiation de fects" is part of the generalproblern of crystal lattice defects and the influence of such defects on the processes occurring in semi conductors. The same is true of photoelectric and similar phe nomena where the action of the radiation is only the start of a complex chain of nonequilibrium electronprocesses. Nevertheless, particularly from the point of view of the experimental physicist, the radiation effects discussed in the present book have inter esting features: several types of radiation may produce the same resul t (for example, ionization by photons and by charged particles) or one type of radiation may produce several effects (ionization and radiation -defect formation). The aim of the author was to consider the most typical prob lems. The subjects discussed differ widely from one another in the extent to which they have been investigated.

Containing the most reliable parameter values for each of these semiconductor materials, along with applicable references, these data are organized in a structured, logical way for each semiconductor material. * Reviews traditional semiconductor materials as well as new, advanced semiconductors. * Essential authoritative handbook on the properties of semiconductor materials.

Optical properties, particularly in the infrared range of wavelengths, continue to be of enormous interest to both material scientists and device engineers. The need for the development of standards for data of optical properties in the infrared range of wavelengths is very timely considering the on-going transition of nano-technology from fundamental R&D to manufacturing. The recent progress in two-dimensional materials is an example of this evolution in materials science and engineering. Radiative properties play a critical role in the processing, process control and manufacturing of semiconductor materials, devices, circuits and systems. The design and implementation of real-time, non-contact process monitoring and control methods in manufacturing, such as multi-wavelength imaging pyrometry, spectroscopic ellipsometry and reflectometry, require the knowledge of the radiative properties of materials. The design and manufacturing of sensors, imagers, waveguides, filters, antireflection coatings and lenses, operating in the infrared range of wavelengths, requires a reliable database of the radiative properties of materials. This book reviews the optical properties of various semiconductors in the infrared range of wavelengths. Some fundamental and experimental studies of the radiative properties of semiconductors are presented. Previous studies, potential applications and future developments are outlined. In chapter 1, an introduction to the radiative properties is presented. A brief overview of the optical and thermal properties is presented in chapter 2. Examples of the instrumentation for the measurements of the radiative properties are described in chapter 3. In chapters 4-13, case studies of the radiative properties of several semiconductors are elucidated. The modeling and applications of these properties are explained in chapters 14 and 15, respectively. In chapter 16, examples of the global infrastructure for these measurements are illustrated.

Comprehensive text and reference covers all phenomena involving light in semiconductors, emphasizing modern applications in semiconductor lasers, electroluminescence, photodetectors, photoconductors, photoemitters, polarization effects, absorption spectroscopy, more. Numerous problems. 339 illustrations.

A graduate textbook presenting the underlying physics behind devices that drive today's technologies. The book covers important details of structural properties, bandstructure, transport, optical and magnetic properties of semiconductor structures. Effects of low-dimensional physics and strain - two important driving forces in modern device technology - are also discussed. In addition to conventional semiconductor physics the book discusses self-assembled structures, mesoscopic structures and the developing field of spintronics. The book utilizes carefully chosen solved examples to convey important concepts and has over 250 figures and 200 homework exercises. Real-world applications are highlighted throughout the book, stressing the links between physical principles and actual devices. Electronic and Optoelectronic Properties of Semiconductor Structures provides engineering and physics students and practitioners with complete and coherent coverage of key modern semiconductor concepts. A solutions manual and set of viewgraphs for use in lectures are available for instructors, from [email protected].

The basic physics of radiative heat - how surfaces emit, reflect, and absorb waves, and how that heat is distributed.

Retaining the comprehensive and in-depth approach that cemented the bestselling first edition's place as a standard reference in the field, the Handbook of Semiconductor Manufacturing Technology, Second Edition features new and updated material that keeps it at the vanguard of today's most dynamic and rapidly growing field. Iconic experts Robert Doering and Yoshio Nishi have again assembled a team of the world's leading specialists in every area of semiconductor manufacturing to provide the most reliable, authoritative, and industry-leading information available. Stay Current with the Latest Technologies In addition to updates to nearly every existing chapter, this edition features five entirely new contributions on... Silicon-on-insulator (SOI) materials and devices Supercritical CO2 in semiconductor cleaning Low-κ dielectrics Atomic-layer deposition Damascene copper electroplating Effects of terrestrial radiation on integrated circuits (ICs) Reflecting rapid progress in many areas, several chapters were heavily revised and updated, and in some cases, rewritten to reflect rapid advances in such areas as interconnect technologies, gate dielectrics, photomask fabrication, IC packaging, and 300 mm wafer fabrication. While no book can be up-to-the-minute with the advances in the semiconductor field, the Handbook of Semiconductor Manufacturing Technology keeps the most important data, methods, tools, and techniques close at hand.

Rapid thermal and integrated processing is an emerging single-wafer technology in ULSI semiconductor manufacturing, electrical engineering, applied physics and materials science. Here, the physics and engineering of this technology are discussed at the graduate level. Three interrelated areas are covered. First, the thermophysics of photon-induced annealing of semiconductor and related materials, including fundamental pyrometry and emissivity issues, the modelling of reactor designs and processes, and their relation to temperature uniformity. Second, process integration, treating the advances in basic equipment design, scale-up, integrated cluster-tool equipment, including wafer cleaning and integrated processing. Third, the deposition and processing of thin epitaxial, dielectric and metal films, covering selective deposition and epitaxy, integrated processing of layer stacks, and new areas of potential application, such as the processing of III-V semiconductor structures and thin- film head processing for high-density magnetic data storage.