Doped by isovalent or heterovalent foreign impurities, II–VI semiconductor compounds enable control of optical and electronic properties, making them ideal in detectors, solar cells, and other precise device applications. Quaternary alloys allow a simultaneous adjustment of band gap and lattice constant, increasing radiant efficiency at a wide range of wavelengths. Quaternary Alloys Based on II–VI Semiconductors consolidates data pertaining to diagrams of quaternary systems based on these semiconductor compounds. The book illustrates up-to-date experimental and theoretical information about phase relations based on II–VI semiconductor systems with four components. It critically evaluates many industrially significant systems presented in two-dimensional sections for the condensed phases. The author classifies all materials according to the periodic groups of their constituent atoms and additional components in the order of their group number. Each quaternary database description contains brief information on the diagram type, possible phase transformations and physical–chemical interactions of the components, thermodynamic characteristics, and methods for equilibrium investigation and sample preparation. Most of the phase diagrams are in their original form. For those with varying published data, the text includes several versions for comparison. This book provides invaluable data for technologists and researchers involved in developing and manufacturing II–VI semiconductors at industrial and national laboratories. It is also suitable for phase relations researchers, inorganic chemists, and semiconductor physicists as well as graduate students in materials science and engineering. Check out the companion books: Ternary Alloys Based on II–VI Semiconductor Compounds and Multinary Alloys Based on II–VI Semiconductors

A companion volume to Ternary Alloys Based on II-VI Semiconductor Compounds (CRC Press, 2013) and Quaternary Alloys Based on II-VI Semiconductor Compounds (CRC Press, 2014), Multinary Alloys Based on II-VI Semiconductors provides up-to-date experimental and theoretical information on phase relations based on II-VI semiconductor systems with five or

Three-volumes book “Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors” is the first to cover both chemical sensors and biosensors and all types of photodetectors and radiation detectors based on II-VI semiconductors. It contains a comprehensive and detailed analysis of all aspects of the application of II-VI semiconductors in these devices. The first volume "Materials and Technologies" of a three-volume set describes the physical, chemical and electronic properties of II-VI compounds, which give rise to an increased interest in these semiconductors. Technologies that are used in the development of various devices based on II-VI connections, such as material synthesis, deposition, characterization, processing, and device fabrication, are also discussed in detail in this volume. It covers also topics related to synthesis and application of II-VI-based nanoparticles and quantum dots, as well their toxicity, biocompatibility and biofunctionalization.

The main purpose of this book is to provide a comprehensive treatment of the materials aspects of group-IV, III−V and II−VI semiconductor alloys used in various electronic and optoelectronic devices. The topics covered in this book include the structural, thermal, mechanical, lattice vibronic, electronic, optical and carrier transport properties of such semiconductor alloys. The book reviews not only commonly known alloys (SiGe, AlGaAs, GaInPAs, and ZnCdTe) but also new alloys, such as dilute-carbon alloys (CSiGe, CSiSn, etc.), III−N alloys, dilute-nitride alloys (GaNAs and GaInNAs) and Mg- or Be-based II−VI semiconductor alloys. Finally there is an extensive bibliography included for those who wish to find additional information as well as tabulated values and graphical information on the properties of semiconductor alloys.

Doped by isovalent or heterovalent foreign impurities (F), II–VI semiconductor compounds enable control of optical and electronic properties, making them ideal in detectors, solar cells, and other precise device applications. For the reproducible manufacturing of the doped materials with predicted and desired properties, manufacturing technologists need knowledge of appropriate ternary system phase diagrams. A guide for technologists and researchers at industrial and national laboratories, Ternary Alloys Based on II-VI Semiconductor Compounds collects all available data on ternary II–VI–F semiconductor materials. It presents ternary phase diagrams for the systems and includes data about phase equilibriums on the cross sections. The book is also suitable for phase diagram researchers, inorganic chemists, and solid state physicists as well as students in materials science, engineering, physical chemistry, and physics. The authors classify all materials according to the periodic groups of their constituent atoms (i.e., possible combinations of Zn, Cd, and Hg with chalcogens S, Se, and Te) and additional components in the order of their group number. Each ternary system database description contains the diagram type, possible phase transformation and physical–chemical interaction of the components, equilibrium investigation methods, thermodynamic characteristics, and the sample preparation method. In some cases, the book illustrates the solid and liquid-phase equilibriums with vapor because of their importance to crystal growth using the vapor–liquid–solid technique. It also presents data on the homogeneity range as well as baric and temperature dependences of solubility impurities in the semiconductor lattice and the liquid phase.

III-V semiconductors have attracted considerable attention due to their applications in the fabrication of electronic and optoelectronic devices as light-emitting diodes and solar cells. Because of their wide applications in a variety of devices, the search for new semiconductor materials and the improvement of existing materials is an important field of study. This new book covers all known information about phase relations in ternary systems based on III-V semiconductors. This book will be of interest to undergraduate and graduate students studying materials science, solid state chemistry, and engineering. It will also be relevant for researchers at industrial and national laboratories, in addition to phase diagram researchers, inorganic chemists, and solid state physicists.

II-VI Semiconductor Materials and Their Applications deals with II-VI compound semiconductors and the status of the two areas of current optoelectronics applications: blue-green emitters and IR detectors. Specifically, the growth, charactrtization, materials and device issues for these two applications are described. Emphasis is placed on the wide bandgap emitters where much progress has occurred recently.The book also presents new directions that have potential, future applications in optoelectronics for II-VI materials. In particular, it discusses the status of dilute magnetic semiconductors for mango-optical and electromagnetic devices, nonlinear optical properties, photorefractive effects and new materials and physics phenomena, such as self-organized, low-dimensional structures.II_VI Semiconductor Materials and Their Applications is a valuable reference book for researchers in the field as well as a textbook for materials science and applied physics courses.

Doped by isovalent or heterovalent foreign impurities (F), II-VI semiconductor compounds enable control of optical and electronic properties, making them ideal in detectors, solar cells, and other precise device applications. For the reproducible manufacturing of the doped materials with predicted and desired properties, manufacturing technologists

A companion volume to Ternary Alloys Based on II-VI Semiconductor Compounds (CRC Press, 2013) and Quaternary Alloys Based on II-VI Semiconductor Compounds (CRC Press, 2014), Multinary Alloys Based on II-VI Semiconductors provides up-to-date experimental and theoretical information on phase relations based on II-VI semiconductor systems with five or

The alloy system A1GaAs/GaAs is potentially of great importance for many high-speed electronics and optoelectronic devices, because the lattice parameter difference GaAs and A1GaAs is very small, which promises an insignificant concentration of undesirable interface states. Thanks to this prominent feature, a number of interesting properties and phenomena, such as high-mobility low-dimensional carrier gases, resonant tunnelling and fractional quantum Hall effect, have been found in the A1GaAs/GaAs heterostructure system. New devices, such as modulation-doped FETs, heterojunction bipolar transistors, resonant tunnelling transistors, quantum-well lasers, and other photonic and quantum-effect devices, have also been developed recently using this material system. These areas are recognized as not being the most interesting and active fields in semiconductor physics and device engineering.