Beam technologies play an important role in microelectronic component fabrication and offer opportunities for application in other manufacturing schemes. Emerging beam technologies that incorporate potential for sensors, control, and information processing have created new opportunities for integrated processing of materials and components. This volume identifies various beam technologies and their applications in electronics and other potential manufacturing processes. Recommendations for research and development to enhance the understanding, capabilities, and applications of beam technologies are presented.

This book, by 36 authorities on the subject, deals with ion beam processing for basic sputter etching of samples, for sputter deposition of thin films, for synthesis of material in thin film form, and of the modification of thin film properties.

Containing the proceedings of three symposia in the E-MRS series this book is divided into two parts. Part one is concerned with ion beam processing, a particularly powerful and versatile technology which can be used both to synthesise and modify materials, including metals, semiconductors, ceramics and dielectrics, with great precision and excellent control. Furthermore it also deals with the correlated effects in atomic and cluster ion bombardment and implantation.Part two deals with the deposition techniques, characterization and applications of advanced ceramic, metallic and polymeric coatings or thin films for surface protection against corrosion, erosion, abrasion, diffusion and for lubrication of contracting surfaces in relative motion.

Energetic ion beam irradiation is the basis of a wide plethora of powerful research- and fabrication-techniques for materials characterisation and processing on a nanometre scale. Materials with tailored optical, magnetic and electrical properties can be fabricated by synthesis of nanocrystals by ion implantation, focused ion beams can be used to machine away and deposit material on a scale of nanometres and the scattering of energetic ions is a unique and quantitative tool for process development in high speed electronics and 3-D nanostructures with extreme aspect radios for tissue engineering and nano-fluidics lab-on-a-chip may be machined using proton beams. This book will benefit practitioners, researchers and graduate students working in the field of ion beams and application and more generally everyone concerned with the broad field of nanoscience and technology.

Materials Processing by Cluster Ion Beams: History, Technology, and Applications discusses the contemporary physics, materials science, surface engineering issues, and nanotechnology capabilities of cluster beam processing. Written by the originator of the gas cluster ion beam (GCIB) concept, this book:Offers an overview of ion beam technologies, f

Beam Processing Technologies is a collection of papers that deals with the miniaturization of devices that will be faster, consume less power, and cost less per operation or fabrication. One paper discusses metal oxide semiconductor (MOS) integrated circuit technology including the operation of devices whose lateral and vertical dimensions are scaled down. If the devices' silicon doping profiles are increased by the same scale factor, they can operate on lower voltages and currents, with the same performance. Another paper describes laser beam processing and wafer-scale integration as techniques to increase the number of devices on a silicon chip. Electron beam technologies can be used in many fabrication processes such as in microlithography, selective oxidation, doping, metrology. Ion beam applications depend on the presence of the ion introduced into the device (e.g. implantation doping), on pseudoelastic collisions (e.g. physical sputtering or crystal damage), and on inelastic scattering (e.g. polymer resist exposure). Silicon molecular beam epitaxy (SiMBE) can also grow high-quality layers at low temperature, particularly concerning germanium, especially as reagrds the growth system design and utilization of n- and p-type doping. Chemical beam epitaxy (CBE) is another epitaxial growth technique that can surpass MBE and metal organic chemical vapor deposition (MO-CVD). The collection is suitable chemical engineers, industrial physicists, and researchers whose work involve micro-fabrication and development of integrated circuits.

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.