As feature dimensions of integrated circuits shrink, the associated geometrical constraints on junction depth impose severe restrictions on the thermal budget for processing such devices. Furthermore, due to the relatively low melting point of the first aluminum metallization level, such restrictions extend to the fabrication of multilevel structures that are now essential in increasing packing density of interconnect lines. The fabrication of ultra large scale integrated (ULSI) devices under thermal budget restrictions requires the reassessment of existing and the development of new microelectronic materials and processes. This book addresses three broad but interrelated areas. The first area focuses on the subject of rapid thermal processing (RTP), a technology that allows minimization of processing time while relaxing the constraints on high temperature. Initially developed to limit dopant redistribution, current applications of RTP are shown here to encompass annealing, oxidation, nitridation, silicidation, glass reflow, and contact sintering. In a second but complementary area, advances in equipment design and performance of rapid thermal processing equipment are presented in conjunction with associated issues of temperature measurement and control. Defect mechanisms are assessed together with the resulting properties of rapidly deposited and processed films. The concept of RTP integration for a full CMOS device process is also examined together with its impact on device characteristics.

The Handbook of Semiconductor Manufacturing Technology describes the individual processes and manufacturing control, support, and infrastructure technologies of silicon-based integrated-circuit manufacturing, many of which are also applicable for building devices on other semiconductor substrates. Discussing ion implantation, rapid thermal processing, photomask fabrication, chip testing, and plasma etching, the editors explore current and anticipated equipment, devices, materials, and practices of silicon-based manufacturing. The book includes a foreword by Jack S. Kilby, cowinner of the Nobel Prize in Physics 2000 "for his part in the invention of the integrated circuit."

Tremendous advances have been made in the use of silicides as contacts and interconnects in micro-electronic devices and as active layers in sensors. A flourish of novel fabrication concepts and characterization techniques has led to high-quality silicide devices and a better understanding of the electronic and micrometallurgical properties of their interfaces. However, the shrinking physical dimensions of ULSI devices beyond the deep submicron regime now poses new and serious materials challenges for the development of manufacturable silicide processes. Scientists and engineers from materials science, physics, chemistry, device, processing and other disciplines come together in this book to examine the current issues facing silicide thin-film applications. Topics include: silicide fundamentals - energetics and kinetics; processing of silicide thin films; ULSI issues; CVD silicides; semiconducting silicides; processing of germano-silicide thin films; silicides and analogs for IR detection; interfaces, surfaces and epitaxy; novel structures and techniques and properties of silicide thin films.