Point Defects In Solids
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Author |
: James H. Crawford |
Publisher |
: Springer Science & Business Media |
Total Pages |
: 568 |
Release |
: 2013-03-09 |
ISBN-10 |
: 9781468429701 |
ISBN-13 |
: 1468429701 |
Rating |
: 4/5 (01 Downloads) |
Synopsis Point Defects in Solids by : James H. Crawford
Crystal defects can no longer be thought of as a scientific curiosity, but must be considered an important aspect of solid-state science. This is largely because many of the more interesting properties of crystalline solids are disproportionately dominated by effects due to a tiny concentration of imperfections in an otherwise perfect lattice. The physics of such lattice defects is not only of significance in a great variety of applications, but is also interesting in its own right. Thus, an extensive science of point defects and dislocations has been constructed during the past two and a half decades. Stimulated by the technological and scientific interest in plasticity, there have appeared in recent years rather a large number of books dealing with dislocations; in the case of point defects, however, only very few broad and extensive treatments have been published. Thus, there are few compre hensive, tutorial sources for the scientist or engineer whose research ac tivities are affected by point defect phenomena, or who might wish to enter the field. It is partially to fill this need that the present treatise aims.
Author |
: Richard J. D. Tilley |
Publisher |
: John Wiley & Sons |
Total Pages |
: 549 |
Release |
: 2008-10-10 |
ISBN-10 |
: 9780470380734 |
ISBN-13 |
: 047038073X |
Rating |
: 4/5 (34 Downloads) |
Synopsis Defects in Solids by : Richard J. D. Tilley
Provides a thorough understanding of the chemistry and physics of defects, enabling the reader to manipulate them in the engineering of materials. Reinforces theoretical concepts by placing emphasis on real world processes and applications. Includes two kinds of end-of-chapter problems: multiple choice (to test knowledge of terms and principles) and more extensive exercises and calculations (to build skills and understanding). Supplementary material on crystallography and band structure are included in separate appendices.
Author |
: Johann-Martin Spaeth |
Publisher |
: Springer Science & Business Media |
Total Pages |
: 376 |
Release |
: 2012-12-06 |
ISBN-10 |
: 9783642844058 |
ISBN-13 |
: 3642844057 |
Rating |
: 4/5 (58 Downloads) |
Synopsis Structural Analysis of Point Defects in Solids by : Johann-Martin Spaeth
Strutural Analysis of Point Defects in Solids introduces the principles and techniques of modern electron paramagnetic resonance (EPR) spectroscopy essentialfor applications to the determination of microscopic defect structures. Investigations of the microscopic and electronic structure, and also correlations with the magnetic propertiesof solids, require various multiple magnetic resonance methods, such as ENDOR and optically detected EPR or ENDOR. This book discusses experimental, technological and theoretical aspects of these techniques comprehensively, from a practical viewpoint, with many illustrative examples taken from semiconductors and other solids. The nonspecialist is informed about the potential of the different methods, while the researcher faced with the task of determining defect structures isprovided with the necessary tools, together with much information on computer-aided methods of data analysis and the principles of modern spectrometer design.
Author |
: James H. Crawford |
Publisher |
: |
Total Pages |
: 576 |
Release |
: 2014-09-01 |
ISBN-10 |
: 146842971X |
ISBN-13 |
: 9781468429718 |
Rating |
: 4/5 (1X Downloads) |
Synopsis Point Defects in Solids by : James H. Crawford
Author |
: James H. Crawford |
Publisher |
: Springer Science & Business Media |
Total Pages |
: 494 |
Release |
: 2012-12-06 |
ISBN-10 |
: 9781468409048 |
ISBN-13 |
: 1468409042 |
Rating |
: 4/5 (48 Downloads) |
Synopsis Point Defects in Solids by : James H. Crawford
Volume 1 of Point Defects in Solids has as its major emphasis defects in ionic solids. Volume 2 now extends this emphasis to semiconductors. The first four chapters treat in some detail the creation, kinetic behavior, inter actions, and physical properties of both simple and composite defects in a variety of semiconducting systems. Also included, as in Vol. 1, are chapters on special topics, namely phonon-defect interactions and defects in organic crystals. Defect behavior in semiconductors has been a subject of considerable interest since the discovery some twenty-five years ago that fast neutron irradiation profoundly affected the electrical characteristics of germanium and silicon. Present-day interest has been stimulated by such semiconductor applications as solar cell power plants for space stations and satellites and semiconductor particle and y-ray detectors, since in both radiation damage can cause serious deterioration. Of even greater practical concern is the need to understand particle damage in order to capitalize upon the develop ing technique of ion implantation as a means of device fabrication. Although the periodic international conferences on radiation effects in semiconductors have served the valuable function of summarizing the extensive work being done in this field, these proceedings are much too detailed and lack the background discussion needed to make them useful to the novice.
Author |
: A. M. Stoneham |
Publisher |
: Oxford University Press |
Total Pages |
: 982 |
Release |
: 2001 |
ISBN-10 |
: 0198507801 |
ISBN-13 |
: 9780198507802 |
Rating |
: 4/5 (01 Downloads) |
Synopsis Theory of Defects in Solids by : A. M. Stoneham
This book surveys the theory of defects in solids, concentrating on the electronic structure of point defects in insulators and semiconductors. The relations between different approaches are described, and the predictions of the theory compared critically with experiment. The physical assumptions and approximations are emphasized. The book begins with the perfect solid, then reviews the main methods of calculating defect energy levels and wave functions. The calculation and observable defect properties is discussed, and finally, the theory is applied to a range of defects that are very different in nature. This book is intended for research workers and graduate students interested in solid-state physics. From reviews of the hardback: 'It is unique and of great value to all interested in the basic aspects of defects in solids.' Physics Today 'This is a particularly worthy book, one which has long been needed by the theoretician and experimentalist alike.' Nature
Author |
: B. Henderson |
Publisher |
: Crane Russak, Incorporated |
Total Pages |
: 226 |
Release |
: 1972 |
ISBN-10 |
: UOM:39015001325789 |
ISBN-13 |
: |
Rating |
: 4/5 (89 Downloads) |
Synopsis Defects in Crystalline Solids by : B. Henderson
Author |
: James Homer Crawford |
Publisher |
: |
Total Pages |
: |
Release |
: 1972 |
ISBN-10 |
: LCCN:72183562 |
ISBN-13 |
: |
Rating |
: 4/5 (62 Downloads) |
Synopsis Point Defects in Solids: Semiconductors and molecular crystals by : James Homer Crawford
Author |
: J. Bourgoin |
Publisher |
: Springer Science & Business Media |
Total Pages |
: 314 |
Release |
: 2012-12-06 |
ISBN-10 |
: 9783642818325 |
ISBN-13 |
: 3642818323 |
Rating |
: 4/5 (25 Downloads) |
Synopsis Point Defects in Semiconductors II by : J. Bourgoin
In introductory solid-state physics texts we are introduced to the concept of a perfect crystalline solid with every atom in its proper place. This is a convenient first step in developing the concept of electronic band struc ture, and from it deducing the general electronic and optical properties of crystalline solids. However, for the student who does not proceed further, such an idealization can be grossly misleading. A perfect crystal does not exist. There are always defects. It was recognized very early in the study of solids that these defects often have a profound effect on the real physical properties of a solid. As a result, a major part of scientific research in solid-state physics has,' from the early studies of "color centers" in alkali halides to the present vigorous investigations of deep levels in semiconductors, been devoted to the study of defects. We now know that in actual fact, most of the interest ing and important properties of solids-electrical, optical, mechanical- are determined not so much by the properties of the perfect crystal as by its im perfections.
Author |
: Johann-Martin Spaeth |
Publisher |
: Springer Science & Business Media |
Total Pages |
: 508 |
Release |
: 2003-01-22 |
ISBN-10 |
: 3540426957 |
ISBN-13 |
: 9783540426950 |
Rating |
: 4/5 (57 Downloads) |
Synopsis Point Defects in Semiconductors and Insulators by : Johann-Martin Spaeth
The precedent book with the title "Structural Analysis of Point Defects in Solids: An introduction to multiple magnetic resonance spectroscopy" ap peared about 10 years ago. Since then a very active development has oc curred both with respect to the experimental methods and the theoretical interpretation of the experimental results. It would therefore not have been sufficient to simply publish a second edition of the precedent book with cor rections and a few additions. Furthermore the application of the multiple magnetic resonance methods has more and more shifted towards materials science and represents one of the important methods of materials analysis. Multiple magnetic resonances are used less now for "fundamental" studies in solid state physics. Therefore a more "pedestrian" access to the meth ods is called for to help the materials scientist to use them or to appreciate results obtained by using these methods. We have kept the two introduc tory chapters on conventional electron paramagnetic resonance (EPR) of the precedent book which are the base for the multiple resonance methods. The chapter on optical detection of EPR (ODEPR) was supplemented by sections on the structural information one can get from "forbidden" transitions as well as on spatial correlations between defects in the so-called "cross relaxation spectroscopy". High-field ODEPR/ENDOR was also added. The chapter on stationary electron nuclear double resonance (ENDOR) was supplemented by the method of stochastic END OR developed a few years ago in Paderborn which is now also commercially available.