Physics And Technology Of High K Gate Dielectrics Ii
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Author |
: Samares Kar |
Publisher |
: The Electrochemical Society |
Total Pages |
: 512 |
Release |
: 2004 |
ISBN-10 |
: 1566774055 |
ISBN-13 |
: 9781566774055 |
Rating |
: 4/5 (55 Downloads) |
Synopsis Physics and Technology of High-k Gate Dielectrics II by : Samares Kar
"This volume is the proceedings of The Second International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues ... and was held during [the] 204th Meeting [of the Electrochemical Society] ..."--P. v.
Author |
: Samares Kar |
Publisher |
: The Electrochemical Society |
Total Pages |
: 565 |
Release |
: 2006 |
ISBN-10 |
: 9781566775038 |
ISBN-13 |
: 1566775035 |
Rating |
: 4/5 (38 Downloads) |
Synopsis Physics and Technology of High-k Gate Dielectrics 4 by : Samares Kar
This issue covers, in detail, all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Author |
: Samares Kar |
Publisher |
: The Electrochemical Society |
Total Pages |
: 676 |
Release |
: 2007 |
ISBN-10 |
: 9781566775700 |
ISBN-13 |
: 1566775701 |
Rating |
: 4/5 (00 Downloads) |
Synopsis Physics and Technology of High-k Gate Dielectrics 5 by : Samares Kar
This issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Author |
: S. Kar |
Publisher |
: The Electrochemical Society |
Total Pages |
: 550 |
Release |
: 2008-10 |
ISBN-10 |
: 9781566776516 |
ISBN-13 |
: 1566776511 |
Rating |
: 4/5 (16 Downloads) |
Synopsis Physics and Technology of High-k Gate Dielectrics 6 by : S. Kar
The issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, novel and still higher permittivity dielectric materials, CMOS processing with high-K layers, metals for gate electrodes, interface issues, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Author |
: Samares Kar |
Publisher |
: |
Total Pages |
: 493 |
Release |
: 2009 |
ISBN-10 |
: 1607680939 |
ISBN-13 |
: 9781607680932 |
Rating |
: 4/5 (39 Downloads) |
Synopsis Physics and Technology of High-k Gate Dielectrics 7 by : Samares Kar
Author |
: Samares Kar |
Publisher |
: |
Total Pages |
: 330 |
Release |
: 2003 |
ISBN-10 |
: UOM:39015061155555 |
ISBN-13 |
: |
Rating |
: 4/5 (55 Downloads) |
Synopsis Physics and Technology of High-k Gate Dielectrics I by : Samares Kar
Author |
: Samares Kar |
Publisher |
: Springer Science & Business Media |
Total Pages |
: 515 |
Release |
: 2013-06-25 |
ISBN-10 |
: 9783642365355 |
ISBN-13 |
: 3642365353 |
Rating |
: 4/5 (55 Downloads) |
Synopsis High Permittivity Gate Dielectric Materials by : Samares Kar
"The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects." .
Author |
: Samares Kar |
Publisher |
: ECS Transactions |
Total Pages |
: 801 |
Release |
: 2006-01-01 |
ISBN-10 |
: 1566774446 |
ISBN-13 |
: 9781566774444 |
Rating |
: 4/5 (46 Downloads) |
Synopsis Physics and Technology of High-k Gate Dielectrics III by : Samares Kar
This issue is the third in the series with this title and it brings state-of-the-art information on all aspects of the high-K gate stacks, including high mobility substrates, high-K gate dielectric materials and processing, gate electrode materials and processing, high-K gate dielectric interfaces, advanced gate stack reliability, high-K gate dielectric characterization and methodologies, and DRAM and non-volatile memory materials.
Author |
: Gang He |
Publisher |
: John Wiley & Sons |
Total Pages |
: 560 |
Release |
: 2012-08-10 |
ISBN-10 |
: 9783527646364 |
ISBN-13 |
: 3527646361 |
Rating |
: 4/5 (64 Downloads) |
Synopsis High-k Gate Dielectrics for CMOS Technology by : Gang He
A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.
Author |
: Samares Kar |
Publisher |
: The Electrochemical Society |
Total Pages |
: 0 |
Release |
: 2009-09 |
ISBN-10 |
: 1566777437 |
ISBN-13 |
: 9781566777438 |
Rating |
: 4/5 (37 Downloads) |
Synopsis Physics and Technology of High-k Gate Dielectrics 7 by : Samares Kar
This issue of ECS Transactions covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility channels, work function and flat-band voltage control, novel and higher permittivity dielectric materials, interface issues, gate stack reliability, DRAM, non-volatile memories, and exploratory applications.