The workshop on "Optical Properties of Low Dimensional Silicon sL Structures" was held in Meylan, France on March, I yd, 1993. The workshop took place inside the facilities of France Telecom- CNET. Around 45 leading scientists working on this rapidly moving field were in attendance. Principal support was provided by the Advanced Research Workshop Program of the North Atlantic Treaty Organisation (NATO). French Delegation a l'Armement and CNET gave also a small financial grant, the organisational part being undertaken by the SEE and CNET. There is currently intense research activity worldwide devoted to the optical properties of low dimensional silicon structures. This follow the recent discovery of efficient visible photoluminescence (PL) from highly porous silicon. This workshop was intended to bring together all the leading European scientists and laboratories in order to reveal the state of the art and to open new research fields on this subject. A large number of invited talks took place (12) together with regular contribution (20). The speakers were asked to leave nearly 1/3 of the time to the discussion with the audience, and that promoted both formal and informal discussions between the participants.

This book focuses on the fundamental phenomena at nanoscale. It covers synthesis, properties, characterization and computer modelling of nanomaterials, nanotechnologies, bionanotechnology, involving nanodevices. Further topics are imaging, measuring, modeling and manipulating of low dimensional matter at nanoscale. The topics covered in the book are of vital importance in a wide range of modern and emerging technologies employed or to be employed in most industries, communication, healthcare, energy, conservation , biology, medical science, food, environment, and education, and consequently have great impact on our society.

A fascinating insight into the state-of-the-art in silicon microphotonics and on what we can expect in the near future. The book presents an overview of the current understanding of getting light from silicon. It concentrates mainly on low dimensional silicon structures, like quantum dots, wires and wells, but covers also alternative approaches like porous silicon and the doping of silicon with rare-earths. The emphasis is on the experimental and theoretical achievements concerning the optoelectronic properties of confined silicon structures obtained during recent years. Silicon based photonic crystals are in particular considered. An in depth discussion of the route towards a silicon laser is presented.

Since their discovery, low dimensional materials have never stopped to intrigue scientists, whether they are physicists, chemists, or biochemists. Investigations of their nature and functions have always been and still are numerous and as soon as a solution is found for a given question, another one is raised. The coupling of nano-materials with photonics, i. e. nano-photonics, has produced a boiling pot of idea, problems, discovery and applications. This statement is abundantly illustrated in the present book. The interest in nano-optoelectronic materials and systems is very widespread, what gives a really international and multicultural flavour to nano-optoelectronic meetings. One of them was organized by our-self in May 2000 in Kiev as a NATO Advanced Research Workshop and EC-Spring School. The arrival of the new millennium provides an obvious transition point at which many aspects of nano-science and nano-engineering of nano photonic systems can be assessed with respect to the research progresses made in the pre ceding decades and to the challenges that lie ahead in the coming decades. This book was planed to mark this with the objective of presenting a collection of papers from experts, which provide broad perspectives on the state-of-the-art in the various disciplines of nano science and nano-engineering and on the directions for future research.

The evolution of Si-based optoelectronics has been extremely fast in the last few years and it is predicted that this growth will still continue in the near future. The aim of the volume is to present different Si-based luminescing materials as porous silicon, rare-earth doped silicon, Si nanocrystals, silicides, Si-based multilayers and silicon-germanium alloy or superlattice structures. The different devices needed for an all-Si-based optoelectronics are treated, ranging from light sources to waveguides, from amplifiers and modulators to detectors. Both the very basic treatments as well as applications to real prototype devices and integration in an optical integrated circuit are presented. Several issues are highlighted: the problem of electrical transport in low-dimensional Si systems, the possibility of gain in Si-based systems, the low modulation speed of Si-based LEDs. The book gives a fascinating picture of the state-of-the-art in Si microphotonics and a perspective on what one can expect in the near future.

The control of optical modes in microcavities or in photonic bandgap (PBG) materials is coming of age! Although these ideas could have been developed some time ago, it is only recently that they have emerged, due to advances in both atomic physics and in fabrication techniques, be it on the high-quality dielectric mirrors required for high-finesse Fabry Perot resonators or in semiconductor multilayer deposition methods. Initially the principles of quantum electro-dynamics (QED) were demonstrated in elegant atomic physics experiments. Now solid-state implementations are being investigated, with several subtle differences from the atomic case such as those due to their continuum of electronic states or the near Boson nature of their elementary excitations, the exciton. Research into quantum optics brings us ever newer concepts with potential to improve system performance such as photon squeezing, quantum cryptography, reversible taps, photonic de Broglie waves and quantum computers. The possibility of implementing these ideas with solid-state systems gives us hope that some could indeed find their way to the market, demonstrating the continuing importance of basic research for applications, be it in a somewhat more focused way than in earlier times for funding.

The phenomenon of hopping, in which a particle executes a series of jumps between discrete states, has a fundamental role in a wide range of solid state transport phenomena. In these proceedings acknowledged experts in the field describe important recent progress in developing the phenomenology of hopping processes and applying it to different systems, including crystalline and amorphous semiconductors, glasses, polymers, mesoscopic conductors and high temperature superconductors.

In the 50 years since the first volume of Progress in Optics was published, optics has become one of the most dynamic fields of science. The volumes in this series that have appeared up to now contain more than 300 review articles by distinguished research workers, which have become permanent records for many important developments, helping optical scientists and optical engineers stay abreast of their fields. - Comprehensive, in-depth reviews - Edited by the leading authority in the field

An assessment of the recent achievements and relative strengths of two developing techniques for characterising surfaces at the nanometer scale: (i) local probe methods, including scanning tunnelling microscopy and its derivatives; and (ii) nanoscale photoemission and absorption spectroscopy for chemical analysis. The keynote lectures were delivered by some of the world's best scientists in the field and some of the topics covered include: (1) The possible application of STM in atomically resolved chemical analysis. (2) The principles of scanning force/friction and scanning near-field optical microscopes. (3) The scanning photoemission electron microscopes built at ELETTRA and SRRC, with a description of synchrotron radiation microscopy. (4) Recent progress in the development of spatially-resolved photoelectron microscopy, especially the use of zone plate photon optics. (5) The present status of non-scanning photoemission microscopy with slow electrons. (6) the BESSY 2 project for a non-scanning photoelectron microscope with electron optics. (7) Spatially-resolved in situ reaction studies of chemical waves and oscillatory phenomena with the UV photoemission microscope.

This unique collection of knowledge represents a comprehensive treatment of the fundamental and practical consequences of size reduction in silicon crystals. This clearly structured reference introduces readers to the optical, electrical and thermal properties of silicon nanocrystals that arise from their greatly reduced dimensions. It covers their synthesis and characterization from both chemical and physical viewpoints, including ion implantation, colloidal synthesis and vapor deposition methods. A major part of the text is devoted to applications in microelectronics as well as photonics and nanobiotechnology, making this of great interest to the high-tech industry.