The two areas of experimental research explored in this volume are: the Hyperfine Interaction Methods, focusing on the microscopic configuration surrounding radioactive probe atoms in semiconductors, and Ion Beam Techniques using scattering, energy loss and channeling properties of highly energetic ions penetrating in semiconductors. A large area of interesting local defect studies is discussed. Less commonly used methods in the semiconductor field, such as nuclear magnetic resonance, electron nuclear double resonance, muon spin resonance and positron annihilation, are also reviewed. The broad scope of the contributions clearly demonstrates the growing interest in the use of sometimes fairly unconventional nuclear methods in the field of semiconductor physics.

A treatment of the experimental techniques and instrumentation most often used in nuclear and particle physics experiments as well as in various other experiments, providing useful results and formulae, technical know-how and informative details. This second edition has been revised, while sections on Cherenkov radiation and radiation protection have been updated and extended.

I have been teaching courses on experimental techniques in nuclear and particle physics to master students in physics and in engineering for many years. This book grew out of the lecture notes I made for these students. The physics and engineering students have rather different expectations of what such a course should be like. I hope that I have nevertheless managed to write a book that can satisfy the needs of these different target audiences. The lectures themselves, of course, need to be adapted to the needs of each group of students. An engineering student will not qu- tion a statement like “the velocity of the electrons in atoms is ?1% of the velocity of light”, a physics student will. Regarding units, I have written factors h and c explicitly in all equations throughout the book. For physics students it would be preferable to use the convention that is common in physics and omit these constants in the equations, but that would probably be confusing for the engineering students. Physics students tend to be more interested in theoretical physics courses. However, physics is an experimental science and physics students should und- stand how experiments work, and be able to make experiments work. This is an open access book.

Physics of Nuclear Radiations: Concepts, Techniques and Applications makes the physics of nuclear radiations accessible to students with a basic background in physics and mathematics. Rather than convince students one way or the other about the hazards of nuclear radiations, the text empowers them with tools to calculate and assess nuclear radiations and their impact. It discusses the meaning behind mathematical formulae as well as the areas in which the equations can be applied. After reviewing the physics preliminaries, the author addresses the growth and decay of nuclear radiations, the stability of nuclei or particles against radioactive transformations, and the behavior of heavy charged particles, electrons, photons, and neutrons. He then presents the nomenclature and physics reasoning of dosimetry, covers typical nuclear facilities (such as medical x-ray machines and particle accelerators), and describes the physics principles of diverse detectors. The book also discusses methods for measuring energy and time spectroscopies before concluding with applications in agriculture, medicine, industry, and art.

There is a growing awareness that the successful implementation of novel material systems and technology steps in the fabrication of microelectronic and optoelectronic devices, is critically dependent on the understanding and control of the materials, the process steps and their interactions. The contributions in this volume demonstrate that characterisation and analysis techniques are an essential support mechanism for research in these fields. Current major research themes are reviewed both in the development and application of diagnostic techniques for advanced materials analysis and fabrication process control. Two distinct trends are elucidated: the emergence and evaluation of sophisticated in situ optical diagnostic techniques such as photoreflectance and spectroellipsometry and the industrial application of ultra-high sensitivity chemical analysis techniques for contamination monitoring. The volume will serve as a useful and timely overview of this increasingly important field.

This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.

Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts

These three day symposia were designed to provide a link between specialists from university or industry who work in different fields of semiconductor optoelectronics. Symposium A dealt with topics including: epitaxial growth of III-V, II-VI, IV-VI, Si-based structures; selective-area, localized and non-planar epitaxy, shadow-mask epitaxy; bulk and new optoelectronic materials; polymers for optoelectronics. Symposium B dealt with III-V epitaxial layers grown by low temperature molecular beam epitaxy, a subject which has undergone rapid development in the last three years.

Dramatic progress has been made in all branches of physics since the National Research Council's 1986 decadal survey of the field. The Physics in a New Era series explores these advances and looks ahead to future goals. The series includes assessments of the major subfields and reports on several smaller subfields, and preparation has begun on an overview volume on the unity of physics, its relationships to other fields, and its contributions to national needs. Nuclear Physics is the latest volume of the series. The book describes current activity in understanding nuclear structure and symmetries, the behavior of matter at extreme densities, the role of nuclear physics in astrophysics and cosmology, and the instrumentation and facilities used by the field. It makes recommendations on the resources needed for experimental and theoretical advances in the coming decade.

This book contains the proceedings of two symposia which brought together crystal growers, chemists and physicists from across the world. The first part is concerned with silicon molecular beam epitaxy and presents an overview of the most research being done in the field. Part two discusses the problems dealing with purification, doping and defects of II-VI materials, mainly of the important semiconductors CdTe and ZnSe. The focus is on materials science issues which are the key for a better understanding of these materials and for any industrial application.