"Semiconductor nanowires exhibit novel electronic and optical properties due to their unique one-dimensional structure and quantum confinement effects. In particular, III-V semiconductor nanowires have been of great scientific and technological interest fo"

Discover a comprehensive exploration of the foundations and frontiers of the optoelectronics technology of group-III nitrides and their ternary alloys In Group III-Nitride Semiconductor Optoelectronics, expert engineer Dr. Choudhury J. Praharaj delivers an insightful overview of the optoelectronic applications of group III-nitride semiconductors. The book covers all relevant aspects of optical emission and detection, including the challenges of optoelectronic integration and a detailed comparison with other material systems. The author discusses band structure and optical properties of III-nitride semiconductors, as well as the properties of their low-dimensional structures. He also describes different optoelectronic systems such as LEDs, lasers, photodetectors, and optoelectronic integrated circuits. Group III-Nitride Semiconductor Optoelectronics covers both the fundamentals of the field and the most cutting-edge discoveries. Detailed appendices contain Maxwell's equations in dielectric media and descriptions of time-dependent perturbation theory and light-matter interaction. Readers will also benefit from: A thorough introduction to the band structure and optical properties of group III-nitride semiconductors Comprehensive explorations of growth and doping of group III-nitride devices and heterostructures Practical discussions of the optical properties of low dimensional structures in group III-nitrides In-depth examinations of lasers and light-emitting diodes, other light-emitting devices, photodetectors, photovoltaics, and optoelectronic integrated circuits Concise treatments of the quantum optical properties of nitride semiconductor devices Perfect for researchers in electrical engineering, applied physics, and materials science, Group III-Nitride Semiconductor Optoelectronics is also a must-read resource for graduate students and industry practitioners in those fields seeking a state-of-the-art reference on the optoelectronics technology of group III-nitrides.

This book presents the fabrication of optoelectronic nanodevices. The structures considered are nanowires, nanorods, hybrid semiconductor nanostructures, wide bandgap nanostructures for visible light emitters and graphene. The device applications of these structures are broadly explained. The book deals also with the characterization of semiconductor nanostructures. It appeals to researchers and graduate students.

As we delve more deeply into the physics and chemistry of functional materials and processes, we are inexorably driven to the nanoscale. And nowhere is the development of instrumentation and associated techniques more important to scientific progress than in the area of nanoscience. The dramatic expansion of efforts to peer into nanoscale materials and processes has made it critical to capture and summarize the cutting-edge instrumentation and techniques that have become indispensable for scientific investigation in this arena. This Handbook is a key resource developed for scientists, engineers and advanced graduate students in which eminent scientists present the forefront of instrumentation and techniques for the study of structural, optical and electronic properties of semiconductor nanostructures.

III-Nitride Semiconductor Optoelectronics covers the latest breakthrough research and exciting developments in the field of III-nitride compound semiconductors. It includes important topics on the fundamentals of materials growth, characterization, and optoelectronic device applications of III-nitrides. Bulk, quantum well, quantum dot, and nanowire heterostructures are all thoroughly explored. - Contains the latest breakthrough research in III-nitride optoelectronics - Provides a comprehensive presentation that covers the fundamentals of materials growth and characterization and the design and performance characterization of state-of-the-art optoelectronic devices - Presents an in-depth discussion on III-nitride bulk, quantum well, quantum dot, and nanowire technologies

Defects in Nanocrystals: Structural and Physico-Chemical Aspects discusses the nature of semiconductor systems and the effect of the size and shape on their thermodynamic and optoelectronic properties at the mesoscopic and nanoscopic levels. The nanostructures considered in this book are individual nanometric crystallites, nanocrystalline films, and nanowires of which the thermodynamic, structural, and optical properties are discussed in detail. The work: Outlines the influence of growth processes on their morphology and structure Describes the benefits of optical spectroscopies in the understanding of the role and nature of defects in nanostructured semiconductors Considers the limits of nanothermodynamics Details the critical role of interfaces in nanostructural behavior Covers the importance of embedding media in the physico-chemical properties of nanostructured semiconductors Explains the negligible role of core point defects vs. surface and interface defects Written for researchers, engineers, and those working in the physical and physicochemical sciences, this work comprehensively details the chemical, structural, and optical properties of semiconductor nanostructures for the development of more powerful and efficient devices.

This book gives a comprehensive overview of recent advances in developing nanowires for building various kinds of electronic devices. Specifically the applications of nanowires in detectors, sensors, circuits, energy storage and conversion, etc., are reviewed in detail by the experts in this field. Growth methods of different kinds of nanowires are also covered when discussing the electronic applications. Through discussing these cutting edge researches, the future directions of nanowire electronics are identified.

The advent of microelectromechanic system (MEMS) technologies and nanotechnologies has resulted in a multitude of structures and devices with ultra compact dimensions and with vastly enhanced or even completely novel properties. In the field of photonics it resulted in the appearance of new paradigms, including photonic crystals that exhibit photonic bandgap and represent an optical analog of semiconductors and metamaterials that have subwavelength features and may have almost arbitrary values of effective refractive index, including those below zero. In addition to that, a whole new field of plasmonics appeared, dedicated to the manipulation with evanescent, surface-bound electromagnetic waves and offering an opportunity to merge nanoelectronics with all-optical circuitry. In the field of infrared technologies MEMS and nanotechnologies ensured the appearance of a new generation of silicon-based thermal detectors with properties vastly surpassing the conventional thermal devices. However, another family of infrared detectors, photonic devices based on narrow-bandgap semiconductors, has traditionally been superior to thermal detectors. Literature about their micro and nanophotonic enhancement has been scarce and scattered through journals. This book offers the first systematic approach to numerous different MEMS and nanotechnology-based methods available for the improvement of photonic infrared detectors and points out to a path towards uncooled operation with the performance of cryogenically cooled devices. It is shown that a vast area for enhancement does exists and that photonic devices can readily keep their leading position in infrared detection. The various methods and approaches described in the book are also directly applicable to different other types of photodetectors like solar cells, often with little or no modification.