This book addresses several mathematical models from the most relevant class of kp-Schrödinger systems. Both mathematical models and state-of-the-art numerical methods for adequately solving the arising systems of differential equations are presented. The operational principle of modern semiconductor nano structures, such as quantum wells, quantum wires or quantum dots, relies on quantum mechanical effects. The goal of numerical simulations using quantum mechanical models in the development of semiconductor nano structures is threefold: First they are needed for a deeper understanding of experimental data and of the operational principle. Secondly, they allow us to predict and optimize in advance the qualitative and quantitative properties of new devices in order to minimize the number of prototypes needed. Semiconductor nano structures are embedded as an active region in semiconductor devices. Thirdly and finally, the results of quantum mechanical simulations of semiconductor nano structures can be used with upscaling methods to deliver parameters needed in semi-classical models for semiconductor devices, such as quantum well lasers. This book covers in detail all these three aspects using a variety of illustrative examples. Readers will gain detailed insights into the status of the multiband effective mass method for semiconductor nano structures. Both users of the kp method as well as advanced researchers who want to advance the kp method further will find helpful information on how to best work with this method and use it as a tool for characterizing the physical properties of semiconductor nano structures. The book is primarily intended for graduate and Ph.D. students in applied mathematics, mathematical physics and theoretical physics, as well as all those working in quantum mechanical research or the semiconductor / opto-electronic industry who are interested in new mathematical aspects.

Based on a scattering theoretic approach which effectively constitutes an extension of the Dyson or Lippman-Schwinger theories, Green functions constitute the backbone of a matching analysis. This analysis is applied to a wide range of models, materials and physical problems, from electronic structure of semiconductor superlattices or phonons in metal superlattices to surface Brillouin scattering, piezoelectric surface waves or interface waves in viscoelastic fluids.

A quantum dot is a particle of matter so small that the addition or removal of an electron changes its properties in some useful way. All atoms are quantum dots, but multi-molecular combinations can have this characteristic. In biochemistry, quantum dots are called redox groups. In nanotechnology, they are called quantum bits or qubits. Quantum dots typically have dimensions measured in nanometres, where one nanometre is 10-9 meter or a millionth of a millimetre. The fields of biology, chemistry, computer science, and electronics are all of interest to researchers in nanotechnology. Other applications of quantum dots include nanomachines, neural networks, and high-density memory or storage media. Research is being carried out on nano-crystals, self-assembled dots, and gated structures. This book presents leading-edge research from around the world.

Concentrator Photovoltaics (CPV) is one of the most promising technologies to produce solar electricity at competitive prices. High performing CPV systems with efficiencies well over 30% and multi-megawatt CPV plants are now a reality. As a result of these achievements, the global CPV market is expected to grow dramatically over the next few years reaching cumulative installed capacity of 12.5 GW by 2020. In this context, both new and consolidated players are moving fast to gain a strategic advantage in this emerging market. Written with clear, brief and self-contained technical explanations, Handbook of Concentrator Photovoltaic Technology provides a complete overview of CPV covering: the fundamentals of solar radiation, solar cells, concentrator optics, modules and trackers; all aspects of characterization and reliability; case studies based on the description of actual systems and plants in the field; environmental impact, market potential and cost analysis. CPV technology is at a key point of expansion. This timely handbook aims to provide a comprehensive assessment of all CPV scientific, technological and engineering background with a view to equipping engineers and industry professionals with all of the vital information they need to help them sustain the impetus of this encouraging technology. Key features: Uniquely combines an explanation of the fundamentals of CPV systems and components with an overview of the market place and their real-life applications. Each chapter is written by well-known industry specialists with extensive expertise in each particular field of CPV technology. Reviews the basic concepts of multi-junction solar cells and new concepts for CPV cells, highlighting the key differences between them. Demonstrates the state of the art of several CPV centres and companies. Facilitates future cost calculation models for CPV. Features extensive case studies in each chapter, including coverage of CPV modules and systems.

ULSI Process Integration 6 covers all aspects of process integration. Sections are devoted to 1) Device Technologies, 2) Front-end-of-line integration (gate stacks, shallow junctions, dry etching, etc.), 3) Back-end-of-line integration (CMP, low-k, Cu interconnect, air-gaps, 3D packaging, etc.), 4) Alternative channel technologies (Ge, III-V, hybrid integration), and 5) Emerging technologies (CNT, graphene, polymer electronics, nanotubes).

The composition of modern semiconductor heterostructures can be controlled precisely on the atomic scale to create low-dimensional systems. These systems have revolutionised semiconductor physics, and their impact on technology, particularly for semiconductor lasers and ultrafast transistors, is widespread and burgeoning. This book provides an introduction to the general principles that underlie low-dimensional semiconductors. As far as possible, simple physical explanations are used, with reference to examples from actual devices. The author shows how, beginning with fundamental results from quantum mechanics and solid-state physics, a formalism can be developed that describes the properties of low-dimensional semiconductor systems. Among numerous examples, two key systems are studied in detail: the two-dimensional electron gas, employed in field-effect transistors, and the quantum well, whose optical properties find application in lasers and other opto-electronic devices. The book includes many exercises and will be invaluable to undergraduate and first-year graduate physics or electrical engineering students taking courses in low-dimensional systems or heterostructure device physics.

In recent years, nanoelectronics has become very interdisciplinary requiring students to master aspects of physics, electrical engineering, chemistry etc. The 2nd edition of this textbook is a comprehensive overview of nanoelectronics covering the necessary quantum mechanical and solid-state physics foundation, an overview of semiconductor fabrication as well as a brief introduction into device simulation using the non-equilibrium Greens function formalism. Equipped with this, the work discusses nanoscale field-effect transistors and alternative device concepts such as Schottky-barrier MOSFETs as well as steep slope transistors based on different materials. In addition, cryogenic operation of MOSFETs for the realization of, e.g., classical control electronics of semiconducting spin qubits is studied. The work contains a number of tasks, examples and exercises with step-by-step video solutions as well as tutorial videos that deepen the understanding of the material. With additional access to simulation tools that allow students to do computational experiments, the emphasis is on thorough explanation of the material enabling students to carry out their own research.

This five-volume handbook focuses on processing techniques, characterization methods, and physical properties of thin films (thin layers of insulating, conducting, or semiconductor material). The editor has composed five separate, thematic volumes on thin films of metals, semimetals, glasses, ceramics, alloys, organics, diamonds, graphites, porous materials, noncrystalline solids, supramolecules, polymers, copolymers, biopolymers, composites, blends, activated carbons, intermetallics, chalcogenides, dyes, pigments, nanostructured materials, biomaterials, inorganic/polymer composites, organoceramics, metallocenes, disordered systems, liquid crystals, quasicrystals, and layered structures. Thin films is a field of the utmost importance in today's materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Advanced, high-performance computers, high-definition TV, digital camcorders, sensitive broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are but a few examples of miniaturized device technologies that depend the utilization of thin film materials. The Handbook of Thin Films Materials is a comprehensive reference focusing on processing techniques, characterization methods, and physical properties of these thin film materials.

A detailed description of the basic physics of semiconductors. All the important equations describing the properties of these materials are derived without the help of other textbooks. The reader is assumed to have only a basic command of mathematics and some elementary semiconductor physics. The text covers a wide range of important semiconductor phenomena, from the simple to the advanced.

The aim of this volume is to provide advanced predoctoral students and young postdoctoral physicists with an opportunity to study the concepts of tunneling phenomena in solids and the theoretical and experimental techniques for their investigation. The contributions are primarily tutorial in nature, covering theoretical and experimental aspects of electron tunnel ing in semiconductors, metals, and superconductors, and atomic tunneling in solids. The work is based upon the lectures delivered at the Advanced Study Institute on "Tunneling Phenomena in Solids," held at the Danish A. E. C. Research Establishment, Riso, Denmark, June 19-30, 1967. Sponsored by the Danish Atomic Energy Commission, the Nordic Institute for Theoretical Physics (NORDITA), and the Science Affairs Division of NATO, with the cooperation of the University of Copenhagen, the Technical University of Denmark, Chalmers Institute of Technology, and the University of Penn sylvania, the lectures were presented by a distinguished panel of scientists who have made major contributions in the field. The relatively large number of lecturers was, in part, made possible by the close coordination of the Advanced Study Institute with the Second International Conference on Electron Tunneling in Solids, which was held at Riso on June 29, 30 and July 1, 1967, under the sponsorship of the U. S. Army Research Office Durham. We are indebted to I. Giaever, E. O. Kane, J. Rowell, and J. R. Schrieffer for advice and assistance in planning the lecture program of the Institute.