This groundbreaking book is the first to give an introduction to microwave de-embedding, showing how it is the cornerstone for waveform engineering. The authors of each chapter clearly explain the theoretical concepts, providing a foundation that supports linear and non-linear measurements, modelling and circuit design. Recent developments and future trends in the field are covered throughout, including successful strategies for low-noise and power amplifier design. This book is a must-have for those wishing to understand the full potential of the microwave de-embedding concept to achieve successful results in the areas of measurements, modelling, and design at high frequencies. With this book you will learn: - The theoretical background of high-frequency de-embedding for measurements, modelling, and design - Details on applying the de-embedding concept to the transistor's linear, non-linear, and noise behaviour - The impact of de-embedding on low-noise and power amplifier design - The recent advances and future trends in the field of high-frequency de-embedding - Presents the theory and practice of microwave de-embedding, from the basic principles to recent advances and future trends - Written by experts in the field, all of whom are leading researchers in the area - Each chapter describes theoretical background and gives experimental results and practical applications - Includes forewords by Giovanni Ghione and Stephen Maas

This new authoritative resource presents the basics of network analyzer measurement equipment and troubleshooting errors involved in the on-wafer microwave measurement process. This book bridges the gap between theoretical and practical information using real-world practices that address all aspects of on-wafer passive device characterization in the microwave frequency range up to 60GHz. Readers find data and measurements from silicon integrated passive devices fabricated and tested in advance CMOS technologies. Basic circuit equations, terms and fundamentals of time and frequency domain analysis are covered. This book also explores the basics of vector network analyzers (VNA), two port S-parameter measurement routines, signal flow graphs, network theory, error models and VNA calibrations with the use of calibration standards.

This work presents an overview of the various facets of microwave device behavioral modeling technology, from the mathematical formulation to the required laboratory parameter extraction, focusing its attention on one of the less covered aspects: the embedding and de-embedding procedures associated with the behavioral model extraction process. The discussion starts with the revision of some of the most important behavioral modeling tools, explaining the three most important types of behavioral model formats (polynomial, artificial neural networks, and table-based models) and their instantiation in the context of microwave transistors. Then, it will evolve to the behavioral model parameter extraction procedures, reviewing the required specific microwave instrumentation and correspondent calibration and de-embedding of measurement data. Finally, this chapter will illustrate the use of embedding and de-embedding procedures in the behavioral modeling context, giving a particular emphasis on the needed behavioral model inversion techniques.

An overview of topics is presented related to noise characterization and modeling of linear, active devices for microwave applications, as well as to advanced methodologies for low-noise design. A complete description of the most common noise measurement techniques, namely the Y-factor method and the cold source method, are provided, with particular attention being paid to practical aspects such as de-embedding the measurement at the device under test reference planes, possible sources of error, and uncertainty estimation. Noise modeling is approached from a well-established standpoint, based on the extraction of a small-signal equivalent circuit model; but also source pull-based techniques—both standard and advanced ones—are broadly illustrated. Finally, a comprehensive discussion on design of single- and multistage low-noise amplifiers is proposed, ranging from the most classical tools and methodologies, such as constant-gain and constant-noise circles, to novel graphical tools and more advanced concepts, such as global mismatch limits and noise measure.

The chapter deals with two recently proposed characterization techniques of microwave transistors oriented to high-frequency power amplifier (PA) design. In particular, the nonlinear embedding and de-embedding design techniques are detailed, along with evidence of their advantages with respect to conventional design approaches in terms of power and frequency handling capability. The discussion also details the differences between the two techniques; despite the fact that they share the same theoretical basis, the techniques suffer from different critical facets. Finally, with the aim of guiding the reader towards full comprehension of the topic, different experimental examples are provided for transistor characterization and PA design.

The world is often considered to behave approximately linearly. However, many real-life phenomena are inherently nonlinear! Hence, in order to accurately model the true behavior of a radio-frequency device or system, its nonlinear characteristics can no longer be ignored and should be taken into account. To do so, one should first be able to measure these nonlinear effects. After some years of hesitation, the high-frequency measurement world finally acknowledged the necessity to accurately measure the in- and out-of-band nonlinear behavior of a radio-frequency (RF) device or system. Since then, different measurement approaches have been developed to achieve this goal. The two major measurement principles being pursued are the sampler-based and the mixer-based methodology. The calibration and de-embedding process of nonlinear measurements is quite involved and requires special calibration standards. From the acquired “nonlinear” measurement data, one can then build a model that accurately describes the in-band and out-of-band nonlinear behavior of an RF system. This chapter will show the reader how to do accurate nonlinear RF measurements and how to obtain a simple and robust characterization of the nonlinear behavior of an RF system.

This chapter aims to describe experimental tools and techniques used for on-wafer millimeter (mm)-wave characterizations of silicon-based devices under the small-signal regime. We discuss the basics of scattering parameters (S parameters), high-frequency (HF) noise concept and measurement facilities, and expert details concerning experimental procedures. In this chapter, we describe first the basic notions of the S-parameters concept and its limitations, as well of as those HF noise. Secondly, the main experimental tools such as mm-wave vectorial network analyzer, noise setup, and on-wafer station are depicted. The third part concerns the description and the methodology of on-wafer calibration and de-embedding techniques applied for mm-wave advanced silicon devices. Finally, the last section focuses on the presentation and description of several examples of device characterizations. The main objective of this chapter is to propose a tradeoff between basic information and details of experience.

This chapter aims to describe methodologies and techniques for de-embedding device measurements from extrinsic measurements by characterizing the parasitic network surrounding the intrinsic device, through the use of a three-dimensional (3D) physical model of the network and its electromagnetic (EM) analysis. The electromagnetic behavior is obtained employing 3D EM solvers and internal ports. In the first part, the de-embedding processes for field-effect transistor (FET) devices to be used for monolithic microwave integrated circuit designs are studied by four different approaches; in the second part of this chapter, the de-embedding of FET devices for hybrid circuit design purposes is described.

Just as physical microwave measurements must be de-embedded from test fixtures by means of calibration, electromagnetic analysis must likewise be calibrated so the results may be de-embedded. This chapter investigates the nature of the electromagnetic analysis port discontinuity, how it is characterized by calibration, and how it is removed (including a possible reference plane shift) by de-embedding. Both double-delay and short-open calibration are described. The theory for single port calibration and de-embedding is presented in a manner that is easily extended to treat multiple coupled ports. Additional theory shows how to extend calibration to groups of internal ports, critical, for example, in analyzing the passive planar portion of an amplifier (both the input and output matching networks in the same analysis) and having internal calibrated ports for connecting the transistor. Evaluation of error (accuracy) is covered in detail. Techniques that take advantage of calibrated ports, including circuit subdivision and port tuning, are described.

Nonlinear models of microwave transistors are essential for the design of high-frequency nonlinear circuits, such as power amplifiers or mixers. Among the existing modeling techniques, measurement-based approaches have gained huge attention from researchers in the last decades. Especially, nonlinear measurements-driven model extraction is preferred for transistors exploited in the design of power amplifiers and mixers. This chapter mainly deals with the generation of empirical transistor models starting from large-signal time-domain waveforms. Specifically, a widely used model available in commercial CAD tools is adopted, and the extraction procedure of the model parameters is outlined in detail. Moreover the advantage of using time-domain waveforms at different frequencies is highlighted. More specifically, by making use of time-domain waveforms at frequencies in the kHz-MHz range, one can separately model the behavior of the transistor output current generator, which is more prone to low-frequency dispersive effects. In fact at low frequencies the effect of the nonlinear transistor capacitance is significantly reduced and, therefore, already “de-embedded” from the measured time-domain waveforms. Once the model of the output current generator is available, one can use high-frequency measurements to determine the nonlinear capacitances (or charges). Several modeling examples of different transistor technologies, such as gallium-arsenide and gallium-nitride, are reported.