The use of high-performance ceramic materials in microelectronics holds the potential for the development of a wide range of novel, high-value products. For example, ferroelectric ceramic capacitors are key to the development of high-density ferroelectric nonvolatile memory (FRAM). High-dielectric constant para-electric capacitors are potentially useful for the production of high-density dynamic random access memory (DRAM) and for decoupling capacitors in high-speed microprocessors. Electro-optic materials are useful as waveguides, tunable filters and switches in advance communication applications. Researchers come together in this book to discuss both the application of metal-organic chemical vapor deposited (MOCVD) materials to microelectronics and the 'nuts and bolts' of the technique. A wide variety of opto-electronic, superconducting, ferroelectric and other advanced ceramic materials are discussed. Problems of dealing with low-volatility precursors, design of new precursors, and characterization of CVD processes are addressed. Topics include: nonoxide ceramics; precursor chemistry and delivery; process analysis and characterization; and oxide ceramics.

Kein anderes Werk bietet Ihnen diese Informationsfülle zu Reaktionen und Methoden der anorganischen Chemie in ähnlich einheitlicher, knapp zusammengefaßter, hervorragend organisierter Form! Neben Beiträgen aus allen Bereichen der anorganischen Chemie finden Sie in diesem Band eine tiefergehende Behandlung von Reaktionen zur Bindungsknüpfung, übersichtlich geordnet nach den beteiligten Elementen. Ein Verbindungsregister eröffnet Ihnen verschiedene Alternativen zum schnellen, zuverlässigen Auffinden von Informationen. (06/99)

While the effects of spontaneous ordering or composition modulation on the properties of semiconductors and optoelectronic devices have been studied with great interest over the past several years, an understanding of the physics and chemistry of these two related phenomena is still in its infancy. This book brings together researchers from around the world to address issues concerning the physics, chemistry and growth parameters for spontaneous ordering and composition modulation. Developments in the use of artificial patterning to obtain new structured materials on a microscopic scale are featured. Advances in characterization techniques are also presented. Topics include: spontaneous ordering; self-assembled structures and quantum dots; self-organized epitaxial structures; composition modulation studies and optoelectronic materials.

Rare-earth doped semiconductors hold great potential for a variety of optoelectronic applications, including lasers, LEDs and optical amplifiers. In fact, the field has grown rapidly over the past several years, with a clear switch in direction. The first book by this name was devoted to rare-earth doped II-VI and III-V semiconductors; more than half of the papers in this new volume are devoted to rare-earth doped silicon. This indicates that rare-earth doping of silicon is now seriously considered as a means to achieve silicon-based optoelectronic devices. In addition, new reports on rare-earth doped III-nitrides are also presented. Researchers from 14 countries come together in the volume to discuss current trends, highlight new developments and identify potential electronic and optoelectronic applications. Topics include: incorporation methods and properties; structural, electrical and optical properties; excitation mechanisms and electroluminescence and integration.

III-V semiconductors have continued to find new applications in optical data transmission, full-color displays, automotive electronics and personal communication systems. Complex epitaxial growth, processing, device design and circuit architecture are all necessary for realization of these elements. This book brings together the diverse group of scientists and researchers that are required to develop the next-generation devices. The wide bandgap nitrides, GaN, AlN, InN and their alloys are featured. The commercial availability of blue- and green-light-emitting diodes based on the InGaN/AlGaN system, and the recent announcement of pulsed operation of a laser diode, have stimulated interest in the growth, characterization and processing of these materials. Potential applications in high-temperature/high-power electronics appear promising because of the good transport properties of these nitrides. Topics include: growth and characterization; photonics and processing; electronics and processing; wide bandgap semiconductors and novel devices and processing.