Liquid crystals have emerged as a class of organic materials with potential applications to optics, photonics and optoelectronics. Although a large number of liquid crystals have been discovered or synthesized, fundamental understanding of structure-property relationships at the molecular level is still lacking. Regardless, liquid-crystalline materials have found use in many areas of technology and their scope has been extended with the development of liquid-crystalline polymers, elastomers and composite systems. In addition, emerging advanced technologies, such as flat-panel displays, optical computing and communications, and imaging will call for improved materials as well as novel multifunctional materials. This book presents recent advances in both the fundamental science and application-specific research of LC technology. New synthetic approaches are featured, as are developments in novel glass forming, low-molecular-weight liquid crystals and their utility in both display and optical applications. Topics include: PDLC composites; display and optical applications of LC-based compounds; modelling; rheology; chiral smectics and thermosets.

Selected, peer reviewed papers from the 2009 International Symposium on Liquid Crystal Science and Technology, August 2-5, Kunming, China, ISLCST2009

Since statistical physics is a tool for the study not only of disordered physical systems, but of biological systems as well, this book from MRS focuses on both. While including physical problems such as fractals, pattern formation at first-order phase transitions, and glassy dynamics, the book also focuses on problems such as the statistical mechanics of DNA and DNA replications, structuring in biological systems, and problems in 'biologically inspired physics'. Topics include: statistical mechanics of proteins; statistical mechanics of DNA; biologically inspired physics; statistical mechanics in biology; micromanipulation in physics and biology; friction and fracture; statistical mechanics in physics and granular media.

This book from the highly successful series on amorphous-silicon science and devices reflects the increasing range of applications for a-Si technology. Advances in solar cells incorporating microcrystalline silicon absorber layers are discussed, and a new manufacturing facility for amorphous-silicon-based tandem solar cells is highlighted. Progress towards realizing both higher resolution and improved visibility in active-matrix liquid crystal displays is featured. And while work on raising the deposition rate for amorphous-silicon transistors is also outlined, it is expected that advances in devices and manufacturing will be accelerated when several fundamental puzzles regarding amorphous silicon's structure and optoelectronic properties are resolved. Topics include: solar cells; thin-film transistors and flat-panel displays; sensors, detectors and novel devices; device physics; deposition technologies; studies of growth processes; hydrogen and structure a-Si:H; defects and equilibration in a-Si:H; fundamental issues in defect processes; transport and recombination processes; thin films for photovoltaic and related device applications.

MRS books on materials reliability in microelectronics have become the snapshot of progress in this field. Reduced feature size, increased speed, and larger area are all factors contributing to the continual performance and functionality improvements in integrated circuit technology. These same factors place demands on the reliability of the individual components that make up the IC. Achieving increased reliability requires an improved understanding of both thin-film and patterned-feature materials properties and their degradation mechanisms, how materials and processes used to fabricate ICs interact, and how they may be tailored to enable reliability improvements. This book focuses on the physics and materials science of microelectronics reliability problems rather than the traditional statistical, accelerated electrical testing aspects. Studies are grouped into three large sections covering electromigration, gate oxide reliability and mechanical stress behavior. Topics include: historical summary; reliability issues for Cu metallization; characterization of electromigration phenomena; modelling; microstructural evolution and influences; oxide and device reliability; thin oxynitride dielectrics; noncontact diagnostics; stress effects in thin films and interconnects and microbeam X-ray techniques for stress measurements.

This book features scientific research that supports the safe and effective disposal of radioactive waste in a geological repository. One highlight of the volume is the opening talk by Rustum Roy, who was instrumental in establishing the first symposium on this topic in 1978. Professor Roy summarizes his views of the past 19 years of progress in the field. A second highlight is the participation by several Russian and Ukrainian scientists who authored papers on nuclear waste disposal aspects of the Chernobyl Unit 4 reactor that exploded in April 1986. Additional topics include: glass formulations and properties; glass/water interactions; cements in radioactive waste management; ceramic and crystalline waste forms; spent nuclear fuel; waste processing and treatment; radiation effects in ceramics, glasses and nuclear waste materials; waste package materials; radionuclide solubility and speciation; radionuclide sorption; radionuclide transport; repository backfill; performance assessment; natural analogues and excess plutonium dispositioning.

This book is intended to be a reference book for engineers working and interested in gas turbine heat transfer analysis and cooling design for advanced research. The methods presented in this book can be applied to heat exchangers, nuclear power plants and electronic component cooling.

Rare-earth doped semiconductors hold great potential for a variety of optoelectronic applications, including lasers, LEDs and optical amplifiers. In fact, the field has grown rapidly over the past several years, with a clear switch in direction. The first book by this name was devoted to rare-earth doped II-VI and III-V semiconductors; more than half of the papers in this new volume are devoted to rare-earth doped silicon. This indicates that rare-earth doping of silicon is now seriously considered as a means to achieve silicon-based optoelectronic devices. In addition, new reports on rare-earth doped III-nitrides are also presented. Researchers from 14 countries come together in the volume to discuss current trends, highlight new developments and identify potential electronic and optoelectronic applications. Topics include: incorporation methods and properties; structural, electrical and optical properties; excitation mechanisms and electroluminescence and integration.