This volume contains the papers presented at the NATO Advanced Research Workshop on "Kinetics of Ordering and Growth at Surfaces", held in Acquafredda di Maratea, Italy, September 18-22, 1989. The workshop's goal was to bring together theorists and experimentalists from two related fields, surface science and thin-film growth, to highlight their common interests and overcome a lack of communication between these two communities. Typically surface scientists are only concerned with the microscopic (atomic) description of solids within one monolayer of the surface. Thin-film growers are usually considered more empirical in their approach, concerned primarily with the "quality of their product", and have not necessarily found it useful to incorporate surface science understanding into their art. This workshop aimed to counter at least in some measure these stereotypes. Its focus was on generating dialogue on the fundamental structural and kinetic processes that lead to the initial stages of film growth, from both the surface science and crystal growth perspectives. To achieve this, alternate days emphasized the view of surface science and thin-film growth, with considerable time for discussion, a format that appeared to succeed well. The success of the workshop is in large measure due to the efforts of the organizing committee, L. C. Feldman, P. K. Larsen, J. A. Venables, and J. Villain, whose advice on the constitution of the program was invaluable.

Providing a comprehensive introduction with the necessary background material to make it accessible for a wide scientific audience, Kinetics of Phase Transitions discusses developments in domain-growth kinetics. This book combines pedagogical chapters from leading experts in this area and focuses on incorporating various experimentally releva

An asymptotic expansion is a series that provides a sequence of increasingly accurate approximations to a function in a particular limit. The formal definition, given by Poincare (1886, Acta Math. 8:295), is as follows. Given a function,

Complex chemically reacting flow simulations are commonly employed to develop quantitative understanding and to optimize reaction conditions in systems such as combustion, catalysis, chemical vapor deposition, and other chemical processes. Although reaction conditions, geometries, and fluid flow can vary widely among the applications of chemically reacting flows, all applications share a need for accurate, detailed descriptions of the chemical kinetics occurring in the gas-phase or on reactive surfaces. Chemically Reacting Flow: Theory and Practice combines fundamental concepts in fluid mechanics and physical chemistry, assisting the student and practicing researcher in developing analytical and simulation skills that are useful and extendable for solving real-world engineering problems. The first several chapters introduce transport processes, primarily from a fluid-mechanics point of view, incorporating computational simulation from the outset. The middle section targets physical chemistry topics that are required to develop chemically reacting flow simulations, such as chemical thermodynamics, molecular transport, chemical rate theories, and reaction mechanisms. The final chapters deal with complex chemically reacting flow simulations, emphasizing combustion and materials processing. Among other features, Chemically Reacting Flow: Theory and Practice: -Advances a comprehensive approach to interweaving the fundamentals of chemical kinetics and fluid mechanics -Embraces computational simulation, equipping the reader with effective, practical tools for solving real-world problems -Emphasizes physical fundamentals, enabling the analyst to understand how reacting flow simulations achieve their results -Provides a valuable resource for scientists and engineers who use Chemkin or similar software Computer simulation of reactive systems is highly effective in the development, enhancement, and optimization of chemical processes. Chemically Reacting Flow helps prepare both students and professionals to take practical advantage of this powerful capability.

In this completely revised edition, all the chapters have been updated to reflect the current state of crystal growth kinetics. At the same time, fifteen percent additional content now allows coverage of computer-assisted modeling of second-order phase changes, microstructure development, novel data and images of coarsening mechanisms, with the most significant single addition being breakthrough results on spinodal decomposition -- published here for the first time in book form. The refined didactical approach with a streamlined presentation now allows readers to grasp the kinetic concepts even more easily, coherently introducing the field of kinetic processes, especially those involved in crystal growth, and explaining such phenomena as diffusion, nucleation, segregation and phase transitions at a level accessible to graduate students. In addition to the basic kinetic concepts, the textbook presents modern applications where these processes play a major role, including ion implantation, plasma deposition and rapid thermal processing.

Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts

In this book, the authors focus on the improvement of the scientific base for the development of environmental risk indicators measured by the presence of pollutants in water and porous media. In pursuit of a correct and complete numerical approach, they deliver insight into the understanding of integrated process, and also of modeling capabilities.