The study of semiconductor-layer structures using infrared ellipsometry is a rapidly growing field within optical spectroscopy. This book offers basic insights into the concepts of phonons, plasmons and polaritons, and the infrared dielectric function of semiconductors in layered structures. It describes how strain, composition, and the state of the atomic order within complex layer structures of multinary alloys can be determined from an infrared ellipsometry examination. Special emphasis is given to free-charge-carrier properties, and magneto-optical effects. A broad range of experimental examples are described, including multinary alloys of zincblende and wurtzite structure semiconductor materials, and future applications such as organic layer structures and highly correlated electron systems are proposed.

Ellipsometry is an experimental technique for determining the thickness and optical properties of thin films. It is ideally suited for films ranging in thickness from sub-nanometer to several microns. Spectroscopic measurements have greatly expanded the capabilities of this technique and introduced its use into all areas where thin films are found: semiconductor devices, flat panel and mobile displays, optical coating stacks, biological and medical coatings, protective layers, and more. While several scholarly books exist on the topic, this book provides a good introduction to the basic theory of the technique and its common applications. The target audience is not the ellipsometry scholar, but process engineers and students of materials science who are experts in their own fields and wish to use ellipsometry to measure thin film properties without becoming an expert in ellipsometry itself.

Ellipsometry is a powerful tool used for the characterization of thin films and multi-layer semiconductor structures. This book deals with fundamental principles and applications of spectroscopic ellipsometry (SE). Beginning with an overview of SE technologies the text moves on to focus on the data analysis of results obtained from SE, Fundamental data analyses, principles and physical backgrounds and the various materials used in different fields from LSI industry to biotechnology are described. The final chapter describes the latest developments of real-time monitoring and process control which have attracted significant attention in various scientific and industrial fields.

This book provides a basic understanding of spectroscopic ellipsometry, with a focus on characterization methods of a broad range of solar cell materials/devices, from traditional solar cell materials (Si, CuInGaSe2, and CdTe) to more advanced emerging materials (Cu2ZnSnSe4, organics, and hybrid perovskites), fulfilling a critical need in the photovoltaic community. The book describes optical constants of a variety of semiconductor light absorbers, transparent conductive oxides and metals that are vital for the interpretation of solar cell characteristics and device simulations. It is divided into four parts: fundamental principles of ellipsometry; characterization of solar cell materials/structures; ellipsometry applications including optical simulations of solar cell devices and online monitoring of film processing; and the optical constants of solar cell component layers.

Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical, physical, and optical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination

A one-of-a-kind text offering an introduction to the use of spectroscopic ellipsometry for novel material characterization In Introduction to Spectroscopic Ellipsometry of Thin Film Materials: Instrumentation, Data Analysis and Applications, a team of eminent researchers delivers an incisive exploration of how the traditional experimental technique of spectroscopic ellipsometry is used to characterize the intrinsic properties of novel materials. The book focuses on the scientifically and technologically important two-dimensional transition metal dichalcogenides (2D-TMDs), magnetic oxides like manganite materials, and unconventional superconductors, including copper oxide systems. The distinguished authors discuss the characterization of properties, like electronic structures, interfacial properties, and the consequent quasiparticle dynamics in novel quantum materials. Along with illustrative and specific case studies on how spectroscopic ellipsometry is used to study the optical and quasiparticle properties of novel systems, the book includes: Thorough introductions to the basic principles of spectroscopic ellipsometry and strongly correlated systems, including copper oxides and manganites Comprehensive explorations of two-dimensional transition metal dichalcogenides Practical discussions of single layer graphene systems and nickelate systems In-depth examinations of potential future developments and applications of spectroscopic ellipsometry Perfect for master’s- and PhD-level students in physics and chemistry, Introduction to Spectroscopic Ellipsometry of Thin Film Materials will also earn a place in the libraries of those studying materials science seeking a one-stop reference for the applications of spectroscopic ellipsometry to novel developed materials.