Provides a state-of-the-art account of the various effects of impurities on the properties of engineering alloys. Outlines a wide range of methods for producing cleaner alloys. Traces the technological advances that allow the economical manufacture of purer materials.

Provides a state-of-the-art account of the various effects of impurities on the properties of engineering alloys. Outlines a wide range of methods for producing cleaner alloys. Traces the technological advances that allow the economical manufacture of purer materials.

This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.

A discussion of the different mechanisms responsible for contamination together with a survey of their impact on device performance. The author examines the specific properties of main and rare impurities in silicon, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine gettering efficiency. Throughout all of these subjects, the book presents only reliable and up-to-date data so as to provide a thorough review of recent scientific investigations.

This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices’ performance. Several control and possible gettering approaches are addressed. The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.

A Textbook for the students of B.Sc.(Engg.), B.E., B.Tech., AMIE and Diploma Courses. A new chapter on ""Semiconductor Fabrication Technology and Miscellaneous Semiconductor Devices"" had been included and additional self-assessment questions with answers and additional worked examples had been provided at the end of the BOOK.

Although there is a good deal of research concerning semiconductor impurities available, most publications on the subject are very specialized and very theoretical. Until now, the field lacked a text that described the current experimental data, applications, and theory concerning impurities in semiconductor physics. Impurities in Semicondu

This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.

Materials science and engineering (MSE) contributes to our everyday lives by making possible technologies ranging from the automobiles we drive to the lasers our physicians use. Materials Science and Engineering for the 1990s charts the impact of MSE on the private and public sectors and identifies the research that must be conducted to help America remain competitive in the world arena. The authors discuss what current and future resources would be needed to conduct this research, as well as the role that industry, the federal government, and universities should play in this endeavor.

Grain boundaries are important structural components of polycrystalline materials used in the vast majority of technical applications. Because grain boundaries form a continuous network throughout such materials, their properties may limit their practical use. One of the serious phenomena which evoke these limitations is the grain boundary segregation of impurities. It results in the loss of grain boundary cohesion and consequently, in brittle fracture of the materials. The current book deals with fundamentals of grain boundary segregation in metallic materials and its relationship to the grain boundary structure, classification and other materials properties.