The dramatic impact of low dimensional semiconductor structures on c- rent and future device applications cannot be overstated. Research over the last decade has highlighted the use of quantum engineering to achieve p- viously unknown limits for device performance in research laboratories. The modi?ed electronic structure of semiconductor quantum structures results in transport and optical properties, which di?er from those of constituent bulk materials. The possibility to tailor properties, such as bandgap, strain, band o?set etc. , of two-dimensional (2D) semiconductors, e. g. quantum wells, for speci?c purposes has had an extensive impact on the electronics, which has resulted in a dramatic renewal process. For instance, 2D structures are today used in a large number of high speed electronics and optoelectronic appli- tions (e. g. detectors, light emitting diodes, modulators, switches and lasers) and in daily life, in e. g. LED-based tra?c lights, CD-players, cash registers. The introduction of impurities, also in very small concentrations, in a semiconductor can change its optical and electrical properties entirely. This attribute of the semiconductor is utilized in the manifoldness of their app- cations. This fact constitutes the principal driving force for investigation of the properties of the impurities in semiconductors. While the impurities in bulk materials have been investigated for a long time, and their properties are fairly well established by now, the corresponding studies of impurities in quantum wells is a more recent research area.

In this book, expert authors describe advanced solar photon conversion approaches that promise highly efficient photovoltaic and photoelectrochemical cells with sophisticated architectures on the one hand, and plastic photovoltaic coatings that are inexpensive enough to be disposable on the other. Their leitmotifs include light-induced exciton generation, junction architectures that lead to efficient exciton dissociation, and charge collection by percolation through mesoscale phases. Photocatalysis is closely related to photoelectrochemistry, and the fundamentals of both disciplines are covered in this volume.

The present volume is a collection of review articles highlighting the fundamental advances made in this area by the internationally acclaimed research groups , most of them being pioneers themselves and coming together for the first time.

A NATO workshop on "The Properties of Impurity States in Semiconductor Superlattices" was held at the University of Essex, Colchester, United Kingdom, from September 7 to 11, 1987. Doped semiconductor superlattices not only provide a unique opportunity for studying low dimensional electronic behavior, they can also be custom-designed to exhibit many other fascinating el~ctronic properties. The possibility of using these materials for new and novel devices has further induced many astonishing advances, especially in recent years. The purpose of this workshop was to review both advances in the state of the art and recent results in various areas of semiconductor superlattice research, including: (i) growth and characterization techniques, (ii) deep and shallow im purity states, (iii) quantum well states, and (iv) two-dimensional conduction and other novel electronic properties. This volume consists of all the papers presented at the workshop. Chapters 1-6 are concerned with growth and characterization techniques for superlattice semiconductors. The question of a-layer is also discussed in this section. Chapters 7-15 contain a discussion of various aspects of the impurity states. Chapters 16- 22 are devoted to quantum well states. Finally, two-dimensional conduction and other electronic properties are described in chapters 23-26.

This is an open access book. We kindly welcome to all academicians, researchers, scientists, engineers and graduate students in the related fields to submit their original research papers. Applications in engineering science that require expertise in mathematics, physics and chemistry. Its mission is to become a voice of the applied science community, addressing researchers and practitioners in different areas ranging from mathematics, physics, and chemistry to all related braches of the engineering, presenting verifiable computational methods, findings, and solutions. The Conference provided a setting for discussing recent developments in various engineering and applied science topics, including Mathematics, Chemistry, Physics, Computational science, Material science, Environmental Science and Chemical engineering. The submitted conference papers will be subjected to stringent peer review and carefully evaluated based on originality and clarity of exposition. All the accepted papers will be published in the conference proceedings. The conference provides opportunities for the attendants to share new ideas, experiences in Applied Sciences and Engineering and to establish collaboration for the future.

Presented in two parts, this first comprehensive overview addresses all aspects of energetic ion irradiation of polymers. Earlier publications and review articles concentrated on selected topics only. And the need for such a work has grown with the dramatic increase of research and applications, such as in photoresists, waveguides, and medical dosimetry, during the last decade. The first part, Fundamentals of Ion Irradiation of Polymers covers the physical, chemical and instrumental fundamentals; treats the specific irradiation mechanisms of low- and high-energy ions (including similarities and differences); and details the potential for future technological application. All the new findings are carefully analyzed and presented in a systematic way, while open questions are identified.

Quantum Wells, Wires and Dots provides all the essential information, both theoretical and computational, to develop an understanding of the electronic, optical and transport properties of these semiconductor nanostructures. The book will lead the reader through comprehensive explanations and mathematical derivations to the point where they can design semiconductor nanostructures with the required electronic and optical properties for exploitation in these technologies. This fully revised and updated 4th edition features new sections that incorporate modern techniques and extensive new material including: Properties of non-parabolic energy bands Matrix solutions of the Poisson and Schrödinger equations Critical thickness of strained materials Carrier scattering by interface roughness, alloy disorder and impurities Density matrix transport modelling Thermal modelling Written by well-known authors in the field of semiconductor nanostructures and quantum optoelectronics, this user-friendly guide is presented in a lucid style with easy to follow steps, illustrative examples and questions and computational problems in each chapter to help the reader build solid foundations of understanding to a level where they can initiate their own theoretical investigations. Suitable for postgraduate students of semiconductor and condensed matter physics, the book is essential to all those researching in academic and industrial laboratories worldwide. Instructors can contact the authors directly ([email protected] / [email protected]) for Solutions to the problems.