Micropower Electronics deals with the operation of modern electronic equipment at micropower levels and the problems associated with micropower electronics. Topics covered include the relations between minimum required power density and frequency response for semiconductor triode amplifiers; physical realization of digital logic circuits; micropower microelectronic subsystems; and metal-oxide-semiconductor field-effect devices for micropower logic circuitry. This book is comprised of 10 chapters and begins with an analysis of fundamental relationships and basic requirements pertinent to the physical realization of minimum power in electronic devices and circuits. The following chapters focus on the implementation of the criteria of micropower electronics in one way or another for the design of specific devices and circuits. A microminiature digital integrator using micropower circuits is described, along with a multiple emitter transistor in low-power logic circuits. The static and dynamic performance of micropower transistor linear amplifiers is also discussed. This monograph will be a valuable resource for scientists and designers concerned with solid-state physics or solid circuits.

Low-power logic, as discussed in the few available references, is primarily concerned with computer-type applications in which high operating rate is the dominant prerequisite. Logic circuits for satellite and space-vehicle use are less demanding of speed but considerably more limited in power consumption. An analysis of the logic circuits suitable for the latter type of application and experimental results to verify the analysis are presented.

Report I of this series characterizes micropower transistors for operation between 1 and 1000 microamperes of collector current. Significant effects of operation at these low currents are the increased junction leakage currents at maximum operating temperatures and the decreased current gain at minimum operating temperatures. For many transistors storage times are negligible at microampere currents; therefore, the switching speed of a micropower transistor is limited by device and circuit capacitance. These effects are described by a large signal dynamic micropower transistor model which has been adapted from the Ebers-Moll transistor representation. Switching time equations are derived from simplified forms of this model. Reports II and III apply this work to micropower logic circuit design and application. (Author).