While most textbooks about scanning electron microscopy (SEM) cover the high-voltage range from 5-50 keV, this volume considers the special problems in low-voltage SEM and summarizes the differences between LVSEM and conventional SEM. Chapters cover the influence of lens aberrations and design on electron-probe formation; the effect of elastic and inelastic scattering processes on electron diffusion and electron range; charging and radiation damage effects; the dependence of SE yield and the backscattering coefficient on electron energy, surface tilt, and material as well as the angular and energy distributions; and types of image contrast and the differences between LVSEM and conventional SEM modes due to the influence of electron-specimen interactions.

The aim of this book is to outline the physics of image formation, electron specimen interactions, imaging modes, the interpretation of micrographs and the use of quantitative modes "in scanning electron microscopy (SEM). lt forms a counterpart to Transmission Electron Microscopy (Vol. 36 of this Springer Series in Optical Sciences) . The book evolved from lectures delivered at the University of Münster and from a German text entitled Raster-Elektronenmikroskopie (Springer-Verlag), published in collaboration with my colleague Gerhard Pfefferkorn. In the introductory chapter, the principles of the SEM and of electron specimen interactions are described, the most important imaging modes and their associated contrast are summarized, and general aspects of eiemental analysis by x-ray and Auger electron emission are discussed. The electron gun and electron optics are discussed in Chap. 2 in order to show how an electron probe of small diameter can be formed, how the elec tron beam can be blanked at high frequencies for time-resolving exper iments and what problems have tobe taken into account when focusing.

In the last decade, since the publication of the first edition of Scanning Electron Microscopy and X-ray Microanalysis, there has been a great expansion in the capabilities of the basic SEM and EPMA. High resolution imaging has been developed with the aid of an extensive range of field emission gun (FEG) microscopes. The magnification ranges of these instruments now overlap those of the transmission electron microscope. Low-voltage microscopy using the FEG now allows for the observation of noncoated samples. In addition, advances in the develop ment of x-ray wavelength and energy dispersive spectrometers allow for the measurement of low-energy x-rays, particularly from the light elements (B, C, N, 0). In the area of x-ray microanalysis, great advances have been made, particularly with the "phi rho z" [Ij)(pz)] technique for solid samples, and with other quantitation methods for thin films, particles, rough surfaces, and the light elements. In addition, x-ray imaging has advanced from the conventional technique of "dot mapping" to the method of quantitative compositional imaging. Beyond this, new software has allowed the development of much more meaningful displays for both imaging and quantitative analysis results and the capability for integrating the data to obtain specific information such as precipitate size, chemical analysis in designated areas or along specific directions, and local chemical inhomogeneities.

This book features reviews by leading experts on the methods and applications of modern forms of microscopy. The recent awards of Nobel Prizes awarded for super-resolution optical microscopy and cryo-electron microscopy have demonstrated the rich scientific opportunities for research in novel microscopies. Earlier Nobel Prizes for electron microscopy (the instrument itself and applications to biology), scanning probe microscopy and holography are a reminder of the central role of microscopy in modern science, from the study of nanostructures in materials science, physics and chemistry to structural biology. Separate chapters are devoted to confocal, fluorescent and related novel optical microscopies, coherent diffractive imaging, scanning probe microscopy, transmission electron microscopy in all its modes from aberration corrected and analytical to in-situ and time-resolved, low energy electron microscopy, photoelectron microscopy, cryo-electron microscopy in biology, and also ion microscopy. In addition to serving as an essential reference for researchers and teachers in the fields such as materials science, condensed matter physics, solid-state chemistry, structural biology and the molecular sciences generally, the Springer Handbook of Microscopy is a unified, coherent and pedagogically attractive text for advanced students who need an authoritative yet accessible guide to the science and practice of microscopy.

A guide to modern scanning electron microscopy instrumentation, methodology and techniques, highlighting novel applications to cell and molecular biology.

Major improvements in instrumentation and specimen preparation have brought SEM to the fore as a biological imaging technique. Although this imaging technique has undergone tremendous developments, it is still poorly represented in the literature, limited to journal articles and chapters in books. This comprehensive volume is dedicated to the theory and practical applications of FESEM in biological samples. It provides a comprehensive explanation of instrumentation, applications, and protocols, and is intended to teach the reader how to operate such microscopes to obtain the best quality images.

In the spring of 1963, a well-known research institute made a market survey to assess how many scanning electron microscopes might be sold in the United States. They predicted that three to five might be sold in the first year a commercial SEM was available, and that ten instruments would saturate the marketplace. In 1964, the Cambridge Instruments Stereoscan was introduced into the United States and, in the following decade, over 1200 scanning electron microscopes were sold in the U. S. alone, representing an investment conservatively estimated at $50,000- $100,000 each. Why were the market surveyers wrongil Perhaps because they asked the wrong persons, such as electron microscopists who were using the highly developed transmission electron microscopes of the day, with resolutions from 5-10 A. These scientists could see little application for a microscope that was useful for looking at surfaces with a resolution of only (then) about 200 A. Since that time, many scientists have learned to appreciate that information content in an image may be of more importance than resolution per se. The SEM, with its large depth of field and easily that often require little or no sample prepara interpreted images of samples tion for viewing, is capable of providing significant information about rough samples at magnifications ranging from 50 X to 100,000 X. This range overlaps considerably with the light microscope at the low end, and with the electron microscope at the high end.

Materials Science and Engineering of Carbon: Characterization discusses 12 characterization techniques, focusing on their application to carbon materials, including X-ray diffraction, X-ray small-angle scattering, transmission electron microscopy, Raman spectroscopy, scanning electron microscopy, image analysis, X-ray photoelectron spectroscopy, magnetoresistance, electrochemical performance, pore structure analysis, thermal analyses, and quantification of functional groups. Each contributor in the book has worked on carbon materials for many years, and their background and experience will provide guidance on the development and research of carbon materials and their further applications. - Focuses on characterization techniques for carbon materials - Authored by experts who are considered specialists in their respective techniques - Presents practical results on various carbon materials, including fault results, which will help readers understand the optimum conditions for the characterization of carbon materials

"Electron microscopes have the capability to examine specimens at much finer detail than a traditional light microscope. Higher electron beam voltages correspond to higher resolution, but some specimens are sensitive to beam damage and charging at high voltages. In the scanning electron microscope (SEM), low voltage imaging is beneficial for viewing biological, electronic, and other beam-sensitive specimens. However, image quality suffers at low voltage from reduced resolution, lower signal-to-noise, and increased visibility of beam-induced contamination. Most solutions for improving low voltage SEM imaging require specialty hardware, which can be costly or system-specific. Point spread function (PSF) deconvolution for image restoration could provide a software solution that is cost-effective and microscope-independent with the ability to produce image quality improvements comparable to specialty hardware systems. Measuring the PSF (i.e., electron probe) of the SEM has been a notoriously difficult task until now. The goals of this work are to characterize the capabilities and limitations of a novel SEM PSF determination method that uses nanoparticle dispersions to obtain a two-dimensional measurement of the PSF, and to evaluate the utility of the measured PSF for restoration of low voltage SEM images. The presented results are meant to inform prospective and existing users of this technique about its fundamental theory, best operating practices, the expected behavior of output PSFs and image restorations, and factors to be aware of during interpretation of results."--Abstract.