In the past several decades, the research on spin transport and magnetism has led to remarkable scientific and technological breakthroughs, including Albert Fert and Peter Grunberg's Nobel Prize-winning discovery of giant magnetoresistance (GMR) in magnetic metallic multilayers. Handbook of Spin Transport and Magnetism provides a comprehensive, bal

Spintronics Handbook, Second Edition offers an update on the single most comprehensive survey of the two intertwined fields of spintronics and magnetism, covering the diverse array of materials and structures, including silicon, organic semiconductors, carbon nanotubes, graphene, and engineered nanostructures. It focuses on seminal pioneering work, together with the latest in cutting-edge advances, notably extended discussion of two-dimensional materials beyond graphene, topological insulators, skyrmions, and molecular spintronics. The main sections cover physical phenomena, spin-dependent tunneling, control of spin and magnetism in semiconductors, and spin-based applications.

Over two volumes and 1500 pages, the Handbook of Spintronics will cover all aspects of spintronics science and technology, including fundamental physics, materials properties and processing, established and emerging device technology and applications. Comprising 60 chapters from a large international team of leading researchers across academia and industry, the Handbook provides readers with an up-to-date and comprehensive review of this dynamic field of research. The opening chapters focus on the fundamental physical principles of spintronics in metals and semiconductors, including an introduction to spin quantum computing. Materials systems are then considered, with sections on metallic thin films and multilayers, magnetic tunnelling structures, hybrids, magnetic semiconductors and molecular spintronic materials. A separate section reviews the various characterisation methods appropriate to spintronics materials, including STM, spin-polarised photoemission, x-ray diffraction techniques and spin-polarised SEM. The third part of the Handbook contains chapters on the state of the art in device technology and applications, including spin valves, GMR and MTJ devices, MRAM technology, spin transistors and spin logic devices, spin torque devices, spin pumping and spin dynamics and other topics such as spin caloritronics. Each chapter considers the challenges faced by researchers in that area and contains some indications of the direction that future work in the field is likely to take. This reference work will be an essential and long-standing resource for the spintronics community.

This book provides an in-depth review of the rapidly developing field of spintronic semiconductors. It covers a broad range of topics, including growth and basic physical properties of diluted magnetic semiconductors based on II-VI, III-V and IV semiconductors, recent developments in theory and experimental techniques and potential device applications; its aim is to provide postgraduate students, researchers and engineers a comprehensive overview of our present knowledge and future perspectives of spintronic semiconductors.

Using spin to replace or augment the role of charge in signal processing devices, computing systems and circuits may improve speed, power consumption, and device density in some cases—making the study of spinone of the fastest-growing areas in micro- and nanoelectronics. With most of the literature on the subject still highly advanced and heavily theoretical, the demand for a practical introduction to the concepts relating to spin has only now been filled. Explains effects such as giant magnetoresistance, the subject of the 2007 Nobel Prize in physics Introduction to Spintronics is an accessible, organized, and progressive presentation of the quantum mechanical concept of spin. The authors build a foundation of principles and equations underlying the physics, transport, and dynamics of spin in solid state systems. They explain the use of spin for encoding qubits in quantum logic processors; clarify how spin-orbit interaction forms the basis for certain spin-based devices such as spintronic field effect transistors; and discuss the effects of magnetic fields on spin-based device performance. Covers active hybrid spintronic devices, monolithic spintronic devices, passive spintronic devices, and devices based on the giant magnetoresistance effect The final chapters introduce the burgeoning field of spin-based reversible logic gates, spintronic embodiments of quantum computers, and other topics in quantum mechanics that have applications in spintronics. An Introduction to Spintronics provides the knowledge and understanding of the field needed to conduct independent research in spintronics.

This book highlights the overview of Spintronics, including What is Spintronics ?; Why Do We Need Spintronics ?; Comparative merit-demerit of Spintronics and Electronics ; Research Efforts put on Spintronics ; Quantum Mechanics of Spin; Dynamics of magnetic moments : Landau-Lifshitz-Gilbert Equation; Spin-Dependent Band Gap in Ferromagnetic Materials; Functionality of ‘Spin’ in Spintronics; Different Branches of Spintronics etc. Some important notions on basic elements of Spintronics are discussed here, such as – Spin Polarization, Spin Filter Effect, Spin Generation and Injection, Spin Accumulation, Different kinds of Spin Relaxation Phenomena, Spin Valve, Spin Extraction, Spin Hall Effect, Spin Seebeck Effect, Spin Current Measurement Mechanism, Magnetoresistance and its different kinds etc. Concept of Giant Magnetoresistance (GMR), different types of GMR, qualitative and quantitative explanation of GMR employing Resistor Network Theory are presented here. Tunnelling Magnetoresistance (TMR), Magnetic Junctions, Effect of various parameters on TMR, Measurement of spin relaxation length and time in the spacer layer are covered here. This book highlights the concept of Spin Transfer Torque (STT), STT in Ferromagnetic Layer Structures, STT driven Magnetization Dynamics, STT in Magnetic Multilayer Nanopillar etc. This book also sheds light on Magnetic Domain Wall (MDW) Motion, Ratchet Effect in MDW motion, MDW motion velocity measurements, Current-driven MDW motion, etc. The book deals with the emerging field of spintronics, i.e., Opto-spintronics. Special emphasis is given on ultrafast optical controlling of magnetic states of antiferromagnet, Spin-photon interaction, Faraday Effect, Inverse Faraday Effect and outline of different all-optical spintronic switching. One more promising branch i.e., Terahertz Spintronics is also covered. Principle of operation of spintronic terahertz emitter, choice of materials, terahertz writing of an antiferromagnetic magnetic memory device is discussed. Brief introduction of Semiconductor spintronics is presented that includes dilute magnetic semiconductor, feromagnetic semiconductor, spin polarized semiconductor devices, three terminal spintronic devices, Spin transistor, Spin-LED, and Spin-Laser. This book also emphasizes on several modern spintronics devices that includes GMR Read Head of Modern Hard Disk Drive, MRAM, Position Sensor, Biosensor, Magnetic Field sensor, Three Terminal Magnetic Memory Devices, Spin FET, Race Track Memory and Quantum Computing.

The concise and accessible chapters of Nanomagnetism and Spintronics, Second Edition, cover the most recent research in areas of spin-current generation, spin-calorimetric effect, voltage effects on magnetic properties, spin-injection phenomena, giant magnetoresistance (GMR), and tunnel magnetoresistance (TMR). Spintronics is a cutting-edge area in the field of magnetism that studies the interplay of magnetism and transport phenomena, demonstrating how electrons not only have charge but also spin. This second edition provides the background to understand this novel physical phenomenon and focuses on the most recent developments and research relating to spintronics. This exciting new edition is an essential resource for graduate students, researchers, and professionals in industry who want to understand the concepts of spintronics, and keep up with recent research, all in one volume. - Provides a concise, thorough evaluation of current research - Surveys the important findings up to 2012 - Examines the future of devices and the importance of spin current

The second edition offers an update on the single most comprehensive survey of the two intertwined fields of spintronics and magnetism, covering the diverse array of materials and structures, including silicon, organic semiconductors, carbon nanotubes, graphene, and engineered nanostructures. It focuses on seminal pioneering work, together with the latest in cutting-edge advances, notably extended discussion of two-dimensional materials beyond graphene, topological insulators, skyrmions, and molecular spintronics. The main sections cover physical phenomena, spin-dependent tunneling, control of spin and magnetism in semiconductors, and spin-based applications.

The second edition offers an update on the single most comprehensive survey of the two intertwined fields of spintronics and magnetism, covering the diverse array of materials and structures, including silicon, organic semiconductors, carbon nanotubes, graphene, and engineered nanostructures. It focuses on seminal pioneering work, together with the latest in cutting-edge advances, notably extended discussion of two-dimensional materials beyond graphene, topological insulators, skyrmions, and molecular spintronics. The main sections cover physical phenomena, spin-dependent tunneling, control of spin and magnetism in semiconductors, and spin-based applications.