- Discusses the most advanced techniques for diamond growth - Assists diamond researchers in deciding on the most suitable process conditions - Inspires readers to devise new CVD (chemical vapor deposition Ever since the early 1980s, and the discovery of the vapour growth methods of diamond film, heteroexpitaxial growth has become one of the most important and heavily discussed topics amongst the diamond research community. Kobashi has documented such discussions with a strong focus on how diamond films can be best utilised as an industrial material, working from the premise that crystal diamond films can be made by chemical vapour disposition. Kobashi provides information on the process and characterization technologies of oriented and heteroepitaxial growth of diamond films.

Diamond is one of the most technologically and scientifically valuable crystalline solids due to its extraordinary thermal, mechanical, optical, chemical and radiation resistant properties. This uniqueness makes diamond materials of great interest in the field of microelectronics. However, progress in this area has been limited because of difficulties associated with doping, uniformity of polycrystalline films, patterning and inconsistency in reproducibility. For application in electronics, both p- and n-type doping of diamond films must be realized. Both natural and synthetic p-type diamond exists, and boron doping of diamond films (for p-type conductivity) is readily obtainable during chemical vapor deposition. Devices such as field effect transistors and Schottky diodes have been fabricated from such films. However, the development of diamond-based electronic devices has been hindered by the inability to produce reasonably conductive n-type diamond. In this study, we have investigated in situ phosphorus doping of diamond films to obtain n-type conducting diamond films. The diamond films were obtained through hot-filament chemical vapor deposition. The films were identified as good quality polycrystalline diamond through X-ray diffraction, scanning electron microscopy and Raman spectroscopy. The n-type dopant incorporation was established through Secondary Ion Mass Spectroscopy. Both lightly doped (resistive) and heavily doped (well conducting) n-type diamond films were obtained, and their electrical properties were established through Current-Voltage characteristics. The diamond interface characteristics with silicon substrate and metal contacts were studied through Voltage Contrast and Electron Beam Induced Current techniques. Devices such as Schottky diodes were fabricated from these phosphorus doped diamond films. These diamond films were found to be reproducible and their electrical characteristics repeatable, thus, setting a trend towards solving one of the main problems in realizing diamond as a material for the future in the semiconductor industry.

The Diamond Films Handbook is an important source of information for readers involved in the new diamond film technology, emphasizing synthesis technologies and diamond film applications. Containing over 1600 references, drawings, photographs, micrographs, equations, and tables, and contributions by experts from both industry and academia, it inclu

Two chemical vapor deposition (CVD) systems (hot filament and microwave plasma) and a multitechnique analysis system have been designed, constructed and characterized. The effects of surface steps, substrate material and substrate/filament bias have been examined. Diamond films from outside sources have been analyzed by a variety of techniques. Most notably, numerous defects, especially (111) twins, have been identified by TEM and are similar to those found in natural diamond. Certain diamond particles were in a twinned epitaxial relationship with the Silicon substrate. It has also been found that a thin Silicon carbide layer forms immediately (i.e.

This work, written by leading international authorities, deals with nucleation growth and processing, characterization and electrical, thermal, optical and mechanical properties of thin film diamond. The final chapters are devoted to the broad range of applications of this material.

Diamond, as well as being a precious gem, is a versatile material par excellence. No other material comes anywhere near to matching its properties, which are both extreme, and also expressed in rare combinations. However, natural diamonds, and those synthesised under high sandpressure temperatures, are too expensive or small for many technological applications. These limitations can be overcome by using large-area diamond coatings; chemically bonded to inexpensive non-diamond surfaces. The consequent economic advantages provide the driving force for much diamond-related research and technology.