The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.

The AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recent progress.

This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.

This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

This book emphasizes the role of micro-grid systems and connected networks for the strategic storage of energy through the use of information and communication techniques, big data, the cloud, and meta-heuristics to support the greed for artificial intelligence techniques in data and the implementation of global strategies to meet the challenges of the city in the broad sense. The intelligent management of renewable energy in the context of the energy transition requires the use of techniques and tools based on artificial intelligence (AI) to overcome the challenges of the intermittence of resources and the cost of energy. The advent of the smart city makes an increased call for the integration of artificial intelligence and heuristics to meet the challenge of the increasing migration of populations to the city, in order to ensure food, energy, and environmental security of the citizen of the city and his well-being. This book is intended for policymakers, academics, practitioners, and students. Several real cases are exposed throughout the book to illustrate the concepts and methods of the networks and systems presented. This book proposes the development of new technological innovations—mainly ICT—the concept of “Smart City” appears as a means of achieving more efficient and sustainable cities. The overall goal of the book is to develop a comprehensive framework to help public and private stakeholders make informed decisions on smart city investment strategies and develop skills for assessment and prioritization, including resolution of difficulties with deployment and reproducibility.

In the high frequency world, the passive technologies required to realize RF and microwave functionality present distinctive challenges. SAW filters, dielectric resonators, MEMS, and waveguide do not have counterparts in the low frequency or digital environment. Even when conventional lumped components can be used in high frequency applications, their behavior does not resemble that observed at lower frequencies. RF and Microwave Passive and Active Technologies provides detailed information about a wide range of component technologies used in modern RF and microwave systems. Updated chapters include new material on such technologies as MEMS, device packaging, surface acoustic wave (SAW) filters, bipolar junction and heterojunction transistors, and high mobility electron transistors (HMETs). The book also features a completely rewritten section on wide bandgap transistors.

Optoelectronics - Materials and Techniques is the first part of an edited anthology on the multifaceted areas of optoelectronics by a selected group of authors including promising novices to the experts in the field. Photonics and optoelectronics are making an impact multiple times the semiconductor revolution made on the quality of our life. In telecommunication, entertainment devices, computational techniques, clean energy harvesting, medical instrumentation, materials and device characterization and scores of other areas of R

Frontiers in Electronics contains the selected best papers presented at the Workshop on Frontiers in Electronics (WOFE-07). This meeting was the fifth in the series of WOFE workshops, and strongly reinforced the tradition of scientific quality and visionary research. The issues addressed ranged from THz and infrared electronics to nanoelectronics and photonics. The papers focused on the fabrication, characterization and applications of nanodevices; wide band gap structures; and state-of-the-art FETs. The participants also discussed the device physics and processing issues including aspects related to SOI and germanium-on-insulator technologies, TFTs, and advanced CMOS and MOSFETs. It is this cross-pollination between different but related fields that made this conference very special.This book, which goes beyond the publication of the WOFE Proceedings, includes full-length invited papers selected at the conference and reviewed by international leaders. The book is divided into four distinct sections, with the common denominator throughout being the “nano-device”, present under various metamorphoses in the wide CMOS and optoelectronics arena./a

This book is dedicated to GaN and its alloys AlGaInN (III-V nitrides), semiconductors with intrinsic properties well suited for visible and UV light emission and electronic devices working at high temperature, high frequency, and harsh environments. There has been a rapid growth in the industrial activity relating to GaN, with GaN now ranking at the second position (after Si) among all semiconductors. This is mainly thanks to LEDs, but also to the emergence of lasers and high power and high frequency electronics. GaN-related research activities are also diversifying, ranging from advanced optical sources and single electron devices to physical, chemical, and biological sensors, optical detectors, and energy converters. All recent developments of nitrides and of their technology are gathered here in a single volume, with chapters written by world leaders in the field. This third book of the series edited by B. Gil is complementary to the preceding two, and is expected to offer a modern vision of nitrides and of their devices to a large audience of readers.