Festkorper Probleme VII covers papers of the European Meeting of the IEEE about Semiconductor Device Research. The book includes papers about the advances in band structures investigations using optical techniques; some problems in the physics of power rectifiers and thyristors; the surface properties of thermally oxidized silicon; and the amplification of acoustic waves at microwave frequencies. The text also presents papers about active thin film devices, optoelectronic devices, and negative conductance in semiconductors. Electrical engineers will find the book invaluable.

Festkorper Probleme XIII: Advances in Solid State Physics is a collection of papers from plenary lectures of the solid states division of the German Physical Society in Munster, on March 19-24, 1973. This collection deals with semiconductor physics, surface phenomena, and surface physics. One paper reviews the findings on experiments on the magnetic, optical, electrical, and structural properties of layer type crystals, particularly metal dichalcogenides. This book then discusses the van der Waals attraction using semi-classical methods to explain the correlation in different atoms. This discussion explains the application of the Schrodinger formalism and the Maxwell equations. One paper also reviews the energy distribution of electrons emitted from solids after ultraviolet radiation or monochromatic X-ray exposure. Another paper reviews the use of clean silicon surfaces associated with electron emitters showing ""negative electron affinity."" A paper then reviews the mechanism of charge-transfer devices, with emphasis on the physics of the transfer processes that happen in surface charge-coupled devices or bulk-charge-couple devices. This compendium will prove useful for materials physicists, scientists, and academicians in the field of advanced physics.

Festkörper Probleme IX: Advances in Solid State Physics presents a model for the behavior of electrons in non-crystalline materials. This book describes some experimental evidence that supports for the behavior of electrons. Organized into 16 chapters, this book begins with an overview of crystallization, glass forming, and melting processes in systems forming chalcogenide glasses. This text then describes the theory of the transport properties of electrons in non-crystalline solids and liquids. Other chapters consider the optical and electrical properties of amorphous semiconductors wherein the treatment is mainly restricted to the elements selenium, germanium, and tellurium. This book discusses as well the basic aspects of the optical phenomena of the Jahn–Teller effect, with emphasis on some criteria of the strength and observability of the Jahn–Teller effect. The final chapter deals with the methods for processing emulsion and metal film masks. This book is a valuable resource for solid state physicists.

Festkörperprobleme XI: Advances in Solid State Physics reviews advances in solid state physics and covers topics ranging from localized vibrational modes in semiconductors to isoelectric impurities in semiconductors, deep impurities, and liquid crystals. Elastic and inelastic electron tunneling through potential barriers in solids is also discussed, along with plasma physics and astrophysics. This book is comprised of 14 chapters and begins with a review of the theoretical and experimental requirements for the observation of high frequency, localized vibrational modes of impurities in a crystal lattice. The reader is then introduced to the properties of deep impurity levels in semiconductors. Some typical examples of isoelectronic impurities are presented, and theories of isoelectronic traps are considered. Subsequent chapters focus on the properties of the various types of liquid crystalline phases (nematic, cholesteric, and smectic); a few astrophysical problems for which the properties of the astrophysical plasma are important; and the use of stochastic models to probe the kinetics of phase transitions. Experimental results for elastic and inelastic electron tunneling through potential barriers in solids are also presented. This monograph will be of interest to physicists.

Festkörper Probleme VIII reviews the status of radiation damage in semiconducting materials and components. This book examines the problems connected to the mechanism of production of defects by bombardment with energetic particles, particularly the displacement energy. Comprised of nine chapters, this book begins with an overview of the microstructure of radiation defects in silicon, which is known from optical absorption experiments and electron spin resonance. This text then explains the preparation of single crystals of high purity or defined impurity contents, which is the basis of successful solid state research. Other chapters consider the widespread application of vapor phase reactions. This book discusses as well mechanism of latent image formation, which considers some advances in silver halide research. The final chapter explains the useful information that can be obtained by a study of the field effects. This book is a valuable resource for solid state physicists as well as applied physicists.

Festkorperprobleme X: Advances in Solid State Physics is a compilation of papers and lectures on semiconductor physics, low temperature physics, thermodynamics, and metal physics of the German Physical Society, Freudenstadt, on April 6-11, 1970. This volume is a collection of 13 papers in English and German on the abovementioned subjects. The book describes some characteristics of the different families of narrow bandgap semiconductors; the result arising from the interaction between free carriers and acoustic waves in solids; and the advances made in the field of modulation spectroscopy. The text further discusses the relations between the state of the photoemitted electrons and the absorption process in the solid. In Chapter 8, applications to various problems in semiconductor physics are dealt with. The Empirical Pseudopotential Method and the theory of phonon dispersion curves from a pseudopotential point of view are also considered. Further examined is the Ginzburg-Landau theory of superconductivity in relation to the probability distribution of the electric field strength of laser light that has a form completely analogous to that of the pair wave function of the theory. The implications of the thermodynamics of point defects in imperfect crystals and the association of foreign ions and vacancies due to their Coulomb interaction, resulting in complexes, are investigated. This book is of interest to electrical engineers, research engineers, professors, and students in theoretical or experimental physics.

Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto- and electrooptics, high-excitation effects, some applications, experimental techniques and group theory. Mathematics is kept as elementary as possible, enough for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics.

The area of high field transport in semiconductors has been of interest since the early studies of dielectric breakdown in various materials. It really emerged as a sub-discipline of semiconductor physics in the early 1960's, following the discovery of substantial deviations from Ohm's law at high electric fields. Since that time, it has become a major area of importance in solid state electronics as semiconductor devices have operated at higher frequencies and higher powers. It has become apparent since the Modena Conference on Hot Electrons in 1973, that the area of hot electrons has ex tended weIl beyond the concept of semi-classical electrons (or holes) in homogeneous semiconductor materials. This was exemplified by the broad range of papers presented at the International Conference on Hot Electrons in Semiconductors, held in Denton, Texas, in 1977. Hot electron physics has progressed from a limited phenomeno logical science to a full-fledged experimental and precision theo retical science. The conceptual base and subsequent applications have been widened and underpinned by the development of ab initio nonlinear quantum transport theory which complements and identifies the limitations of the traditional semi-classical Boltzmann-Bloch picture. Such diverse areas as large polarons, pico-second laser excitation, quantum magneto-transport, sub-three dimensional systems, and of course device dynamics all have been shown to be strongly interactive with more classical hot electron pictures.

This book examines the physical principles behind the operation of high-speed transistors operating at frequencies above 10 GHz and having switching times less than 100 psec. If the 1970s cannot be remembered for the opportunities for creating and extensively using transistors operating at such high speeds, then, the situation has changed radically because of rapid progress in sub micrometer technology for manufacturing transistors and integrated circuits from GaAs and other semiconductor materials and the powerful influx of new physical concepts. Not only have transistors having switching speeds of 50-100 psec operating in the 10-20 GHz region been created in recent years, but the possibilities for manufacturing transistors operating one to two orders of magnitude faster have been revealed. As superhigh-speed transistors have been created, many of the most important areas of technology such as communications, computing technology, television, radar, and the manufacture of scientific, industrial, and medical equipment have qualitatively changed. Microwave transistors operating at millimeter wavelengths make it possible to produce compact and highly efficient equipment for communications and radar technology. Transistors with switching speeds better than 10-100 psec make it possible to increase the speed of microprocessors and other computer components to tens of billions of operations per second and thereby solve one of the most pressing problems of modern electronics - increasing the speed of digital information processing.

The articles collected in this volume give a broad overview of the current state of surface science. Pioneers in the field and researchers met together at this Solvay Conference to discuss important new developments in surface science, with an emphasis on the common area between solid state physics and physical chemistry. The contributions deal with the following subjects: structure of surfaces, surface science and catalysis, two-dimensional physics and phase transitions, scanning tunneling microscopy, surface scattering and surface dynamics, chemical reactions at surfaces, solid-solid interfaces and superlattices, and surface studies with synchrotron radiation. On each of these subjects an introductory review talk and a number of short research contributions are followed by extensive discussions, which appear in full in the text. This nineteenth Solvay Conference commemorates the 75th anniversary of the Solvay Institutes.